VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
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AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
IT(AV) or IF(AV)
27 A
Type
Modules - thyristor, standard
Package
AAP Gen 7 (TO-240AA)
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
ELECTRICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
60
ITSM,
IFSM
50 Hz
400
60 Hz
420
I2t
50 Hz
800
60 Hz
730
I2t
UNITS
27
A
kA2s
8000
kA2s
400 to 1600
V
TStg
-40 to +125
°C
TJ
-40 to +125
°C
VRRM
Range
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
06
600
700
600
VS-VSK.26
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
IT(AV)
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
TEST CONDITIONS
VALUES
180° conduction, half sine wave,
TC = 85 °C
IO(RMS)
I(RMS)
or
UNITS
27
I(RMS)
60
A
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
No voltage
reapplied
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
I2t (1)
VT(TO) (2)
rt (2)
Sinusoidal
half wave,
initial TJ = TJ maximum
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
420
335
350
800
No voltage
reapplied
t = 8.3 ms
Maximum I2t for fusing
400
Initial TJ = TJ maximum
730
560
510
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
8000
Low level (3)
0.86
High level
(4)
Low level (3)
High level
(4)
VTM
ITM = x IT(AV)
VFM
IFM = x IF(AV)
dI/dt
TJ = TJ maximum
TJ = TJ maximum
TJ = 25 °C
A2s
1.09
9.58
7.31
A2s
V
m
1.65
V
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
mA
Notes
(1) I2t for time t = I2t x t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x x I
AV < I < x IAV
(4) I > x I
AV
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VALUES
PGM
10
PG(AV)
2.5
IGM
2.5
-VGM
VGT
Anode supply = 6 V
resistive load
TJ = 25 °C
V
2.5
1.7
270
TJ = -40 °C
IGT
A
10
TJ = 125 °C
Maximum gate current required to trigger
W
4.0
TJ = -40 °C
Maximum gate voltage required to trigger
UNITS
Anode supply = 6 V
resistive load
TJ = 25 °C
mA
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
VALUES
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
VALUES
UNITS
-40 to +125
°C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.76
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
°C/W
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
JEDEC®
Case style
75
g
2.7
oz.
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
VSK.26..
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.212
0.258
0.330
0.466
0.72
0.166
0.276
0.357
0.482
0.726
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Maximum average on-state power loss (W)
130
RthJC (DC) = 0.76°C/W
120
110
100
180°
120°
90°
60°
30°
90
80
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
5
10
15
20
25
180°
120°
90°
60°
30°
50
40
30
DC
RMS limit
20
10
Per leg, Tj = 125°C
0
0
30
10
20
30
40
50
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
400
130
RthJC (DC) = 0.76 °C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
0
10
20
30
40
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
350
300
250
200
Per leg
150
1
50
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
400
50
180°
120°
90°
60°
30°
40
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
60
Average on-state current (A)
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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30
RMS limit
20
10
Per leg, Tj = 125°C
0
0
5
10
15
20
25
30
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
350
300
Maximum Non-repetitive Surge
Current. Control
of conduction may not be maintained.
Versus Pulse Train Duration
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
250
200
Per leg
150
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Maximum total on-state power loss (W)
100
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
4 °C/W
8 °C/W
90
180°
120°
90°
60°
30°
80
70
60
50
40
30
20
VSK.26 Series
Per module
Tj = 125°C
10
0
0
10
20
30
40
50
Total RMS output current (A)
60
0
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
250
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
8 °C/W
180°
(sine)
180°
(rect)
200
150
∼
100
50
2 x VSK.26 Series
single phase bridge connected
Tj = 125°C
0
0
10
20
30
40
50
Total output current (A)
0
60
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Maximum total power loss (W)
300
RthSA = 0.1 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
250
120°
(rect)
200
150
100
3 x VSK.26 Series
three phase bridge connected
Tj = 125°C
50
0
0
20
40
60
Total output current (A)
0
80
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
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Instantaneous on-state current (A)
1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous on-state voltage (V)
Transient thermal impedance Z thJC (°C/W)
Fig. 10 - On-State Voltage Drop Characteristics
10
Steady state value
RthJC = 0.76 °C/W
(DC operation)
1
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Rectangular g ate pulse
a)Recommended load line for
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
= 6 µs
(1)
(2)
(3)
(4)
PGM = 100 W, tp = 500 µs
PGM = 50 W, tp = 1 ms
PGM = 20 W, tp = 25 ms
PGM = 10 W, tp = 5 ms
(a)
(b)
1
TJ = -40 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
VSK. Series
IRK.26..
0.01
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
26
1
2
3
4
1
-
/
16
5
Vishay Semiconductors product
2
-
Module type
3
-
Circuit configuration (see Circuit Configuration table)
4
-
Current code (26 A)
5
-
Voltage code (see Voltage Ratings table)
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
VSKT
(1)
~
1
Two SCRs doubler circuit
+
2
T
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
VSKH
(1)
~
1
SCR/diode doubler circuit,
positive control
+
2
H
(2)
3
4 5
(3)
G1 K1
(4) (5)
VSKL
(1)
~
1
SCR/diode doubler circuit,
negative control
L
2
+
(2)
3
7 6
(3)
K2 G2
(7) (6)
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
VSKN
(1)
-
1
SCR/diode common anodes
2
N
+
(2)
3
4 5
+
(3)
G1 K1
(4) (5)
VSKU
(1)
+
1
Two SCRs common cathodes
2
U
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
VSKV
(1)
-
1
Two SCRs common anodes
V
2
+
(2)
3
4 5 7 6
+
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: indmodules@vishay.com
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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