VS-VSKL500-16PBF

VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor (Super MAGN-A-PAK Power Modules), 500 A FEATURES • High current capability • High surge capability • Industrial standard package • 3000 VRMS isolating voltage with non-toxic substrate • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Super MAGN-A-PAK TYPICAL APPLICATIONS • Motor starters • DC motor controls - AC motor controls PRIMARY CHARACTERISTICS IT(AV), IF(AV) 500 A Type Modules - thyristor, standard Package Super MAGN-A-PAK • Uninterruptible power supplies     MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 500 A TC = 82 °C 785 A 50 Hz 17.8 60 Hz 18.7 50 Hz 1591 60 Hz 1452 IT(AV) , IF(AV) TC = 82 °C IT(RMS) ITSM I2t I2t kA kA2s 15 910 kA2s V VRRM Range 800 to 1600 TStg Range -40 to +150 TJ Range -40 to +130 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSK.500 VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA 100 Revision: 26-Jul-2018 Document Number: 94420 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 A Maximum average on-state current  at case temperature IT(AV), IF(AV) 180° conduction, half sine wave 82 °C Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 785 A t = 10 ms No voltage reapplied 17.8 100 % VRRM reapplied 15.0 Maximum peak, one-cycle,  non-repetitive on-state surge current ITSM, IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 18.7 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied kA 15.7 1591 1452 1125 kA2s 1027 15 910 Low level value or threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.85 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.93 Low level value on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.36 High level value on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.32 kA2s V m Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V Maximum holding current IH Maximum latching current IL TJ = 25 °C, anode supply 12 V resistive load 500 1000 mA SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 2.0 Typical turn-off time tq ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100  200 μs BLOCKING PARAMETER Maximum critical rate of rise  of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/μs RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 26-Jul-2018 Document Number: 94420 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current +IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS VALUES TJ = TJ maximum, tp  5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 3.0 TJ = TJ maximum, tp  5 ms 20 5.0 TJ = 25 °C, Vak 12 V TJ = TJ maximum UNITS W A V 200 mA 3.0 V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ -40 to +130 Maximum storage temperature range TStg -40 to +150 Maximum thermal resistance,  junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs 0.065 Mounting surface smooth, flat and greased 0.02 K/W Super MAGN-A-PAK to heatsink Mounting torque ± 10 % DC operation °C busbar to super MAGN-A-PAK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Approximate weight 6 to 8 Nm 12 to 15 1500 Case style See dimensions - link at the end of datasheet g Super MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Jul-2018 Document Number: 94420 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series 130 VSK.500.. Series R thJC (DC) = 0.065 K/ W 120 110 Conduc tion Angle 100 90 30° 80 60° 90° 120° 70 180° 60 0 100 200 300 400 500 600 Maximum Average On-state Power Loss (W) Vishay Semiconductors DC 180° 120° 90° 60° 30° 900 800 700 600 500 400 RMS Limit Conduction Period 300 VSK.500.. Series Per Junc tion TJ = 130°C 200 100 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A) Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics 130 VSK.500.. Series R thJC (DC) = 0.065 K/ W 120 110 Conduction Period 100 90 80 30° 60° 90° 120° 180° 70 DC 60 0 180° 120° 90° 60° 30° 400 RMSLimit 300 Conduc tion Angle 200 VSK.500.. Series Per Junction TJ= 130°C 100 0 0 14000 100 200 300 400 @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 12000 11000 10000 9000 VSK.500.. Series Per Junction 8000 7000 1 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 500 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 700 500 At Any Rated Loa d Cond ition And With Rated VRRM Ap p lied Following Surge. Initial TJ = 130°C 15000 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics 600 16000 100 200 300 400 500 600 700 800 900 Average On-state Current (A) Maximum Average On-state Power Loss (W) 1000 Fig. 1 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 18000 16000 14000 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Dura tion. Control Of Cond uc tion Ma y Not Be Maintained. Initial TJ = 130°C No Voltage Reapplied Rated VRRMReapplied 12000 10000 8000 VSK.500.. Series Per Junction 6000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 94420 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series Vishay Semiconductors = W K/ W K/ SA R th 09 0. 750 700 180° 650 120° 0. 16 90° 600 K/ 60° W 550 0.2 30° K/ 500 Conduction Angle W 450 400 0.3 K/ W 350 0 .4 K 300 /W 250 0.6 K 200 /W 150 VSK.500.. Series Per Module 100 TJ = 130°C 50 0 0 100 200 300 400 500 600 700 800 0 20 12 0. 07 0. W K/ e lt -D a R Maximum Total On-state Power Loss (W) www.vishay.com 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Total RMSOutput Current (A) Fig. 7 - On-State Power Loss Characteristics 0. 02 K/ W 1000 0.0 8K /W 0.12 K/ W 0.2 K /W 2 x VSK.500.. Series Single Phase Bridge Connected T J = 130°C 500 R K/ W ta el -D 1500 W K/ 0.0 5 01 0. 2000 K/ W = 0. 03 A hS 180° (Sine) 180° (Rect) 2500 Rt Maximum Total Power Loss (W) 3000 0 0 200 400 600 800 0 1000 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics R 4000 120° (Rect) 3500 SA th Maximum Total Power Loss (W) 4500 0. 02 K/ W 0.0 3K /W 3000 2500 2000 1500 3 x VSK.500.. Series Three Phase Bridge Connected T J = 130°C 1000 500 = 0. 01 K/ W -D el ta R 0.0 5K /W 0.08 K/ W 0.2 K/ W 0 0 250 500 750 0 1000 1250 1500 Total Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Revision: 26-Jul-2018 Document Number: 94420 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT500-..PbF, VS-VSKH500-..PbF, VS-VSKL500-..PbF Series www.vishay.com Vishay Semiconductors Transient Thermal Impedance Z thJC (K/ W) Instantaneous On-state Current (A) 10000 TJ= 25°C 1000 TJ= 130°C VSK.500.. Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.1 VSK.500.. Series Per Junc tion 0.01 Steady State Value: RthJC = 0.065 K/ W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr