VS-VSKL56/08

VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A, 60 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS ADD-A-PAK • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRIMARY CHARACTERISTICS • Up to 1600 V IT(AV) or IF(AV) 45 A, 60 A Type Modules - thyristor, standard Package AAP Gen 7 (TO-240AA) • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS, and battery charger. The AAP Gen 7 (TO-240AA), new generation of AAP module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.  MAJOR RATINGS AND CHARACTERISTICS SYMBOL VS-VSK.41 VS-VSK.56 IT(AV) or IF(AV) 85 °C 45 60 IO(RMS) As AC switch 100 135 ITSM, IFSM 50 Hz 850 1200 60 Hz 890 1256 I2t CHARACTERISTICS A 50 Hz 3.61 7.20 60 Hz 3.30 6.57 36.1 72 kA2s 400 to 1600 400 to 1600 V I2t VDRM/VRRM UNITS Range kA2s TStg -40 to +125 °C TJ -40 to +125 °C Revision: 26-Jul-2018 Document Number: 94630 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 VS-VSK.41 VS-VSK.56 IRRM, IDRM AT 125 °C mA 15 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) IT(AV) Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch TEST CONDITIONS VSK.41 VSK.56 180° conduction, half sine wave, TC = 85 °C I(RMS) IO(RMS) or I(RMS) 45 60 100 135 UNITS A t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum value or threshold voltage Maximum value of on-state  slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current I2t (1) VT(TO) (2) rt (2) 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum 850 1200 890 1256 715 1000 750 1056 3.61 7.20 3.30 6.57 2.56 5.10 2.33 4.56 t = 0.1 ms to 10 ms, no voltage reapplied  TJ = TJ maximum 36.1 72 Low level (3) 1.08 0.91 1.12 1.02 4.7 4.27 4.5 3.77 1.81 1.7 t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing No voltage reapplied High level (4) Low level (3) High level (4) No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum TJ = TJ maximum TJ = TJ maximum VTM ITM =  x IT(AV) VFM IFM =  x IF(AV) dI/dt TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 200 TJ = 25 °C Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 kA2s kA2s V m V A/μs mA 400 Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x  x I AV < I <  x IAV (4) I >  x I AV Revision: 26-Jul-2018 Document Number: 94630 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage TEST CONDITIONS VS-VSK.41 VS-VSK.56 PGM 10 PG(AV) 2.5 IGM 2.5 - VGM 10 Maximum gate current required to trigger VGT IGT W A 4.0 TJ = -40 °C Maximum gate voltage required to trigger UNITS Anode supply = 6 V resistive load TJ = 25 °C TJ = 125 °C 1.7 TJ = -40 °C 270 Anode supply = 6 V resistive load TJ = 25 °C V 2.5 mA 150 TJ = 125 °C 80 Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA VS-VSK.41 VS-VSK.56 UNITS 15 mA 3000 (1 min) 3600 (1 s) V 1000 V/μs VS-VSK.41 VS-VSK.56 UNITS -40 to +125 °C BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state  leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum internal thermal resistance, junction to case per leg RthJC DC operation Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.44 °C/W 0.1 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar 4 Nm 3 Approximate weight JEDEC® Case style 0.35 75 g 2.7 oz. AAP Gen 7 (TO-240AA) R CONDUCTION PER JUNCTION DEVICES SINE HALF WAVE CONDUCTION 180° 120° 90° 60° RECTANGULAR WAVE CONDUCTION 30° 180° 120° 90° 60° 30° VSK.41.. 0.110 0.131 0.17 0.23 0.342 0.085 0.138 0.177 0.235 0.345 VSK.56.. 0.088 0.104 0.134 0.184 0.273 0.07 0.111 0.143 0.189 0.275 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Jul-2018 Document Number: 94630 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series Maximum average on-state power loss (W) 130 VSK.41 Series RthJC (DC) = 0.44°C/W 120 110 100 180° 120° 90° 60° 30° 90 80 0 Maximum allowable case temperature (°C) Vishay Semiconductors 10 20 30 40 80 180° 120° 90° 60° 30° 60 RMS limit 100 DC 40 20 VSK.41 Series Per leg, Tj = 125°C 0 0 10 20 30 40 50 60 70 80 Average on-state current (A) Average on-state current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 800 130 VSK.41 Series RthJC (DC) = 0.44 °C/W 120 110 100 DC 180° 120° 90° 60° 30° 90 80 70 0 10 20 30 40 50 60 70 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 700 600 500 400 Per leg 300 1 80 10 100 Number of equal amplitude half cycle current pulses (N) Average on-state current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 900 80 180° 120° 90° 60° 30° 70 60 50 RMS limit 40 30 20 VSK.41 Series Per leg, Tj = 125°C 10 0 0 5 10 15 20 25 30 35 40 45 50 Average on-state current (A) Fig. 3 - On-State Power Loss Characteristics Peak half sine wave on-state current (A) Maximum average on-state power loss (W) 120 50 Peak half sine wave on-state current (A) Maximum allowable case temperature (°C) www.vishay.com 800 700 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintaned. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied 600 500 400 Per leg 300 0.01 0.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 94630 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors Maximum total on-state power loss (W) 160 140 RthSA = 0.1 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 3 °C/W 5 °C/W 180° 120° 90° 60° 30° 120 100 80 60 40 VSK.41 Series Per module Tj = 125°C 20 0 0 20 40 60 100 0 80 Total RMS output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 7 - On-State Power Loss Characteristics Maximum total power loss (W) 350 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 180° (sine) 180° (rect) 300 250 200 ∼ 150 100 2 x VSK.41 Series single phase bridge connected Tj = 125°C 50 0 0 20 40 60 80 Total output current (A) 0 100 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 8 - On-State Power Loss Characteristics Maximum total power loss (W) 500 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 400 120° (rect) 300 200 100 3 x VSK.41 Series three phase bridge connected Tj = 125°C 0 0 20 40 60 80 100 120 140 0 Total output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 9 - On-State Power Loss Characteristics Revision: 26-Jul-2018 Document Number: 94630 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series Maximum average on-state power loss (W) 130 VSK.56 Series RthJC (DC) = 0.35°C/W 120 110 100 180° 120° 90° 60° 30° 90 80 0 Maximum allowable case temperature (°C) Vishay Semiconductors 10 20 30 40 50 60 180° 120° 90° 60° 30° 120 100 DC 80 RMS limit 60 40 20 VSK.56 Series Per leg, Tj = 125°C 0 0 20 40 60 80 100 Average on-state current (A) Average on-state current (A) Fig. 10 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics 1100 130 VSK.56 Series RthJC (DC) = 0.35 °C/W 120 110 100 DC 180° 120° 90° 60° 30° 90 80 70 0 20 40 60 80 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1000 900 800 700 600 500 Per leg 400 1 100 10 100 Number of equal amplitude half cycle current pulses (N) Average on-state current (A) Fig. 11 - Current Ratings Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current 1300 100 180° 120° 90° 60° 30° 80 Peak half sine wave on-state current (A) Maximum average on-state power loss (W) 140 70 Peak half sine wave on-state current (A) Maximum allowable case temperature (°C) www.vishay.com 60 RMS limit 40 20 VSK.56 Series Per leg, Tj = 125°C 0 0 10 20 30 40 50 60 70 Average on-state current (A) Fig. 12 - On-State Power Loss Characteristics 1200 1100 1000 900 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied 800 700 600 500 400 0.01 Per leg 0.1 1 Pulse train duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 94630 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors Maximum total on-state power loss (W) 250 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.4 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 2 °C/W 4 °C/W 180° 120° 90° 60° 30° 200 150 100 50 VSK.56 Series Per module Tj = 125°C 0 0 20 40 60 80 100 120 140 0 Total RMS output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 16 - On-State Power Loss Characteristics Maximum total power loss (W) 600 500 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 2 °C/W 180° (sine) 180° (rect) 400 ∼ 300 200 2 x VSK.56 Series single phase bridge connected Tj = 125°C 100 0 0 20 40 60 80 100 120 140 0 Total output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 17 - On-State Power Loss Characteristics Maximum total power loss (W) 700 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 600 500 120° (rect) 400 300 200 3 x VSK.56 Series three phase bridge connected Tj = 125°C 100 0 0 20 40 60 80 100 120 140 160 180 0 Total output current (A) 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Fig. 18 - On-State Power Loss Characteristics Revision: 26-Jul-2018 Document Number: 94630 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors 1000 VSK. 41 Series Per leg Instantaneous on-state current (A) Instantaneous on-state current (A) 1000 100 10 Tj = 125°C Tj = 25°C VSK. 56 Series Per leg 100 10 Tj = 125°C Tj = 25°C 1 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Instantaneous on-state voltage (V) Instantaneous on-state voltage (V) Fig. 19 - On-State Voltage Drop Characteristics Fig. 20 - On-State Voltage Drop Characteristics Transient thermal impedance Z thJC (°C/W) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 Steady state value RthJC = 0.44 °C/W RthJC = 0.35 °C/W (DC operation) 0.1 VSK.41 Series VSK.56 Series Per leg 0.01 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Fig. 21 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous gate voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 VSK. IRK.41../ .56.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous gate current (A) Fig. 22 - Gate Characteristics Revision: 26-Jul-2018 Document Number: 94630 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS K T 56 1 2 3 4 / 16 5 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see Circuit configuration table) 4 - Current code 5 - 41 = 45 A Voltage code (see Voltage Ratings table) 56 = 60 A Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING (1) ~ VSKT Two SCRs doubler circuit 1 + 2 T (2) 3 4 5 7 6 (3) G1 K1 K2 G2 (4) (5) (7) (6) (1) ~ VSKH SCR/diode doubler circuit, positive control 1 + 2 H (2) 3 4 5 (3) G1 K1 (4) (5) (1) ~ VSKL 1 SCR/diode doubler circuit, negative control 2 L + (2) 3 7 6 (3) K2 G2 (7) (6) (1) - VSKN SCR/diode common anodes 1 2 N + (2) 3 4 5 + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95368 Revision: 26-Jul-2018 Document Number: 94630 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Thyristor DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 30 ± 1 (1.18 ± 0.039) 15.5 ± 0.5 (0.6 ± 0.020) 24 ± 0.5 (1 ± 0.020) Viti M5 x 0.8 Screws M5 x 0.8 6.7 ± 0.3 (0.26 ± 0.012) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) Document Number: 95368 Revision: 11-Nov-08 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 5.8 ± 0.25 (0.228 ± 0.010) 15 ± 0.5 (0.59 ± 0.020) For technical questions, contact: indmodules@vishay.com 4 ± 0.2 (0.157 ± 0.008) 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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