VS-VSKS500/08PBF

VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors Single Thyristor (MAGN-A-PAK Block Power Module), 500 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 MAGN-A-PAK Block • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 500 A Type Modules - thyristor, standard Package MAGN-A-PAK block • Battery chargers • Welders • Power converters • Alternators MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VDRM/VRRM IT(AV) I2t V 500 50 Hz 14 000 60 Hz 14 658 50 Hz 980 60 Hz 894 785 I2t TJ UNITS 800 76 °C IT(RMS) ITSM VALUES A kA2s 9800 kA2s -40 to +130 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 130 °C mA 800 900 80 Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKS500/08PbF Revision: 26-Jul-2018 Document Number: 93160 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction half sine wave As AC switch t = 10 ms Maximum peak, one-cycle  on-state, non-repetitive  surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms VALUES UNITS 500 A 76 °C 785 No voltage reapplied 16 646 100 % VRRM  reapplied 14 000 No voltage reapplied 17 430 Sine half wave, initial TJ = TJ maximum 100 % VRRM  reapplied t = 0.1 ms to 10 ms, no voltage reapplied 14 658 1385 1265 894 kA2s 894 1385 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum 0.6839 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ maximum 0.7598 Low level value on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum 0.393 High level value on-state slope resistance rt2 (I >  x IT(AV)), TJ maximum 0.389 Maximum on-state voltage drop A kA2s V m VTM TJ = 25 °C, Ipk = 500 A 1.1 V VALUES UNITS SWITCHING PARAMETER SYMBOL TEST CONDITIONS Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs, Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, Gate 0 V 100 , tp = 500 μs 200 SYMBOL TEST CONDITIONS VALUES UNITS 1.3 μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 67 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IDRM, IRRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminal shorted, t = 1 s 3000 V Revision: 26-Jul-2018 Document Number: 93160 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum holding current IH Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM DC gate voltage not to trigger VGD DC gate current not to trigger IGD Maximum non-repetitive rate of rise of turned-on current dI/dt TEST CONDITIONS VALUES UNITS TJ = TJ maximum, tp  5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp  5 ms 3.0 A 3 V TJ = 25 °C Anode supply: 12 V resistive load 200 W mA 600 20 TJ = TJ maximum, tp  5 ms V 5.0 TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 0.30 V 10 mA 1000 A/μs VALUES UNITS -40 to +130 °C Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM, It = 400 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.08 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased 0.035 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. Lubricated threads. 6 to 8 Mounting torque ± 10 % K/W MAGN-A-PAK block to heatsink busbar to MAGN-A-PAK block 12 to 15 Approximate weight Case style Nm 430 g 15.3 oz. MAGN-A-PAK block R CONDUCTION PER JUNCTION VS-VSKS500 RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.013 0.0148 0.018 0.026 0.044 0.082 0.0142 0.019 0.027 0.044 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  Revision: 26-Jul-2018 Document Number: 93160 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors 600 120 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) 140 Ø Conduction angle 100 80 60° 60 180° 30° 90° 40 120° 20 500 400 300 100 200 300 400 500 100 Per leg, TJ = 125 °C 0 600 Average On-State Current (A) 93160_01 100 200 300 400 500 Average On-State Current (A) 93160_04 Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics 15 500 140 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied 14 500 120 100 80 30° 60 60° 40 180° 90° Ø Conduction period 20 Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) Ø Conduction period 0 0 13 500 12 500 11 500 10 500 9500 8500 120° Per leg, TJ = 125 °C 7500 6500 0 0 100 200 300 400 1 500 Average On-State Current (A) 93160_02 600 15 500 400 RMS limit 300 200 Ø 100 Peak Half Sine Wave On-State Current (A) 17 500 180° 120° 90° 60° 30° 13 500 200 300 400 500 5500 0.01 600 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics 9500 7500 0 100 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied 11 500 Conduction angle 0 100 Fig. 5 - Maximum Non-Repetitive Surge Current 700 500 10 Number of Equal Amplitude Half Cycle Current Pulses (N) 93160_05 Fig. 2 - Current Rating Characteristics Maximum Average On-State Power Loss (W) RMS limit 200 0 93160_03 180° 120° 90° 60° 30° 93160_06 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 93160 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Instantaneous On-State Current (A) Vishay Semiconductors 10 000 1000 TJ = 130 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On-State Voltage (V) 93160_07 Fig. 7 - On-State Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (K/W) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 93160_08 Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- VSK S 500 1 2 3 4 / 08 PbF 5 6 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (S = single SCR) 4 - Current rating (500 = 500 A) 5 - Voltage rating (08 = 800 V) 6 - PbF = lead (Pb)-free Revision: 26-Jul-2018 Document Number: 93160 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKS500/08PbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT DRAWING 2 (+) 1 Single SCR 2 3 (-) 7 6 4 5 K1 G1 K1 G1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95379 Revision: 26-Jul-2018 Document Number: 93160 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors Thyristor MAP Block DIMENSIONS in millimeters 3.0 Fast-on tab 2.8 x 0.8 20 + 1.5 52 - 0.0 33 ± 0.5 9.5 ± 0.5 102.8 ± 0.3 Ø 6. 3 36.8 ± 0.15 44.7 ± 0.15 M1 K A 25 7 6 K G 4 38 ± 0.3 5 5 51.5 ± 0.3 0 80 ± 0.3 93.5 ± 0.3 Notes • Dimensions are nominal • Full engineering drawings are available on request Document Number: 95379 Revision: 02-Dec-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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