VS-VSK.170PbF, VS-VSK.250PbF Series
www.vishay.com
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A, 250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
MAGN-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRIMARY CHARACTERISTICS
IT(AV)
170 A, 250 A
Type
Modules - thyristor, standard
Package
MAGN-A-PAK
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor/thyristor and thyristor/diode in seven basic
configurations. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
compact assemblies to be built. They can be interconnected
to form single phase or three phase bridges or as
AC-switches when modules are connected in anti-parallel
mode. These modules are intended for general purpose
applications such as battery chargers, welders, motor
drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
85 °C
I2t
170
250
555
50 Hz
5100
8500
60 Hz
5350
8900
50 Hz
131
361
60 Hz
119
330
1310
3610
I2t
VDRM/VRRM
TJ
VSK.250..
377
IT(RMS)
ITSM
VSK.170..
400 to 1600
Range
400 to 2000
-40 to +130
UNITS
A
kA2s
kA2s
V
°C
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VS-VSK.170PbF, VS-VSK.250PbF Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
20
2000
2100
VS-VSK.170-
VS-VSK.250-
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
Maximum peak, one-cycle on-state
non-repetitive, surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
VSK.170
VSK.250
UNITS
170
250
A
°C
85
85
377
555
5100
8500
5350
8900
4300
7150
4500
7500
131
361
119
330
92.5
255
84.4
233
t = 0.1 ms to 10 ms, no voltage reapplied
1310
3610
Low level value or threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
0.89
0.97
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.12
1.00
Low level value on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)),
TJ = TJ maximum
1.34
0.60
High level value on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.96
0.57
ITM = x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.44
Maximum on-state voltage drop
VTM
Maximum holding current
IH
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
500
500
Maximum latching current
IL
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C
1000
1000
A
kA2s
kA2s
V
m
V
mA
Revision: 12-Nov-2018
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SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical delay time
td
Typical rise time
tr
Typical turn-off time
tq
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ
maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
1.0
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
2.0
μs
50 to 150
BLOCKING
PARAMETER
VSK.170
VSK.250
UNITS
50
60
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted,
25 °C, 1 s
3000
V
TJ = TJ maximum, exponential to 67 %
rated VDRM
1000
V/μs
Critical rate of rise of off-state voltage
dV/dt
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
PGM
tp 5 ms, TJ = TJ maximum
10.0
Maximum average gate power
PG(AV)
f = 50 Hz, TJ = TJ maximum
2.0
Maximum peak gate current
+ IGM
tp 5 ms, TJ = TJ maximum
3.0
Maximum peak negative gate voltage
- VGT
tp 5 ms, TJ = TJ maximum
5.0
Maximum peak gate power
TJ = -40 °C
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
VGT
IGT
TJ = 25 °C
A
V
3.0
TJ = TJ maximum
2.0
TJ = -40 °C
350
TJ = 25 °C
W
4.0
Anode supply = 12 V,
resistive load; Ra = 1
Anode supply = 12 V,
resistive load; Ra = 1
mA
200
TJ = TJ maximum
100
UNITS
Maximum gate voltage that will not trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.25
V
Maximum gate current that willnot trigger
IGD
TJ = TJ maximum, rated VDRM applied
10.0
mA
TJ = TJ maximum, ITM = 400 A,
rated VDRM applied
500
A/μs
Maximum rate of rise of turned-on current
dI/dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
Junction operating and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.17
0.125
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.02
0.02
Mounting
torque
± 10 %
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
Approximate weight
Case style
-40 to +130
UNITS
°C
K/W
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
4 to 6
Nm
500
g
17.8
oz.
MAGN-A-PAK
Revision: 12-Nov-2018
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VS-VSK.170PbF, VS-VSK.250PbF Series
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R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
180°
120°
90°
60°
30°
120°
90°
60°
30°
VSK.170-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
VSK.250-
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
UNITS
K/W
Maximum Allowable Case Temperature (°C)
130
VSK.170.. series
RthJC (DC) = 0.17 K/W
120
110
Conduction Angle
100
90
30°
80
60°
90°
120°
70
180°
60
0
40
80
120
160
200
Maximum Average On-state Power Loss (W)
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
300
180°
120°
90°
60°
30°
250
200
RMS limit
150
100
Conduction angle
50
VSK.170.. series
per junction
TJ = 125° C
0
0
Average On-state Current (A)
130
VSK.170.. series
RthJC (DC) = 0.17 K/W
110
Conduction Period
100
90
30°
60°
90°
120°
80
70
180°
DC
60
0
50
100
150
200
250
80
120
160
200
300
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
120
40
Average On-state Current (A)
350
DC
180°
120°
90°
60°
30°
300
250
200
RMS limit
150
Conduction period
100
VSK.170.. series
per junction
TJ = 125°C
50
0
0
50
100
150
200
250
300
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
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VS-VSK.170PbF, VS-VSK.250PbF Series
5000
Vishay Semiconductors
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4500
4000
3500
3000
2500
VSK.170.. series
per junction
2000
1
10
5000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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Maximum non-repetitive surge current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 130 °C
No voltage reapplied
Rated VRRM reapplied
4500
4000
3500
3000
2500
VSK.170.. series
per junction
2000
0.01
100
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
400
A
=0
W
K/
W
K/
R th S
8
0. 0
K/
W
.04
K/ W
-D
0.3
5
K/W
e lt
250
K/
W
2
0.
3
0.
2
K/
W
0.1
300
0.
25
W
K/
180°
120°
90°
60°
30°
350
16
0.
aR
Maximum Total On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
200 Conduction angle
150
100
VSK.170.. series
per module
TJ = 130 °C
50
0
0
50
100 150 200 250 300 350 400
0
Total RMS Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
-D
e lt
a
R
100
K/
W
K/ W
0.35
2 x VSK.170.. series
single phase bridge
connected
TJ = 130 °C
200
2K
/W
0. 2
5K
/W
400
300
W
K/
0 .2
. 02
=0
500
0. 1
6
W
K/
180°
(sine)
180°
(rect.)
600
K/
W
W
K/
700
0.1
0.
08
K/
W
04
0.
1
800
SA
R th
0.
900
06
0.
Maximum Total Power Loss (W)
1000
K/ W
0
0
50
100
150
200
250
Total Output Current (A)
300
0
350
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
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3 x VSK.170.. series
three phase bridge
connected
TJ = 130 °C
K/
W
0. 1
2K
/W
0. 1 6
K/ W
0.25
K/ W
aR
600
200
el t
-D
0. 1
800
400
8K
/W
W
K/
120°
(Rect)
K/
W
.01
0.0
1000
=0
SA
R th
1200
W
K/
0.
05
1400
03
0.
Maximum Total Power Loss (W)
1600
0
0
100
200
300
400
Total Output Current (A)
0
500
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
130
VSK.250.. series
RthJC(DC) = 0.125 K/W
120
110
Conduction angle
100
90
30°
60°
80
90°
120°
70
180°
60
0
50
100
150
200
250
300
Maximum Average On-state Power Loss (W )
Maximum Allowable Case Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
350
250
180°
120°
90°
60°
30°
200
RMS limit
300
150
Conduction Angle
100
VSK.250.. series
per junction
TJ = 130 °C
50
0
0
VSK.250.. Series
RthJC (DC) = 0.125 K/W
120
110
Conduction period
100
90
30°
60°
90°
80
120°
180°
70
DC
60
0
100
200
300
400
100
150
200
250
500
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
Fig. 12 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 10 - Current Ratings Characteristics
130
50
Average On-state Current (A)
Average On-state Current (A)
500
DC
180°
120°
90°
60°
30°
450
400
350
300
250
RMS limit
200
150
Conduction period
100
VSK.250.. series
per junction
TJ = 130 °C
50
0
0
50
100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 13 - On-State Power Loss Characteristics
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VS-VSK.170PbF, VS-VSK.250PbF Series
7500
Vishay Semiconductors
7000
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 130 °C
6500
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
6000
5500
5000
4500
VSK.250.. series
per junction
4000
3500
1
10
9000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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Maximum non-repetitive surge Current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 130 °C
No voltage reapplied
Rated VRRM reapplied
8000
7000
6000
5000
4000
VSK.250.. series
per junction
3000
0.01
100
0.1
1
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
700
A
S
R th
=0
/W
5K
K/
W
W
K/
0.
.02
16
K/
W
0.2
0K
/W
02
. 5K
/W
e lt
a
R
0.3
300
-D
400
W
K/
Conduction angle
0.0
500
0.
12
180°
120°
90°
60°
30°
08
600
0.
Maximum Total On-state Power Loss (W)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
K/ W
200
VSK.250.. series
per module
TJ = 130 °C
100
0
0
100
200
300
400
500
Total RMS Output Current (A)
600
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
Rt
A
hS
=0
. 01
W
K/
K/
W
-D
e lt
0 .1
aR
800
K/
W
/W
2K
W
K/
180°
(sine)
180°
(rect.)
K/
W
03
0.0
6
1000
0.
04
0.
0.
05
1200
0.0
Maximum Total Power Loss (W)
1400
K/ W
0.1
2K
/W
0 .16
K/ W
600
400
2 x VSK.250.. series
single phase bridge
connected
TJ = 130 °C
200
0.3 K
/W
0
0
100
200
300
Total Output Current (A)
400
500
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
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R th
SA
=0
.01
0.1
K/
W
0. 1
2K
/W
0.1
6K
/W
0.2
0K
/W
-D
e lt
aR
3 x VSK.250.. series
three phase bridge
connected
TJ = 130 °C
K/ W
800
200
W
K/
1000
400
03
0.
120°
(Rect)
600
K/
W
0 .0
8K
/W
1400
1200
K/
W
W
K/
0.
06
1600
05
04
0.
1800
0.
Maximum Total Power Loss (W)
2000
0.25
K/ W
0
0
100
200
300
400
500
Total Output Current (A)
600
700
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Typical Reverse Recovery Charge - Qrr (µC)
TJ = 25 °C
TJ = 130 °C
1000
VSK.170 series
per junction
100
0.5
1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous Forward Voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
10 000
Instantaneous Forward Current (V)
1800
TJ = 25 °C
TJ = 130 °C
1000
VSK.250 series
per junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Fig. 20 - On-State Voltage Drop Characteristics
VSK.170.. series
TJ = 130 °C
per junction
1600
1400
ITM = 800 A
500 A
1200
300 A
200 A
1000
100 A
800
50 A
600
400
200
0
5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Reverse Recovery Charge Characteristics
Typical Reverse Recovery Charge - Qrr (µC)
Instantaneous Forward Current (V)
10 000
2400
VSK.250.. series
2200 TT ==130
130°C°C
JJ
perJunction
junction
2000 Per
ITM = 800 A
500 A
300 A
1800
200 A
1600
100 A
1400
1200
50 A
1000
800
600
400
200
0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 22 - Reverse Recovery Charge Characteristics
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(1)
(2)
(3)
(4)
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 Ω; tr < = 1 µs
b) Recommended load line for
≤ 30 % rated di/dt : 10 V, 20 Ω
tr ≤ 1 µs
10
PGM
PGM
PGM
PGM
=
=
=
=
10 W, tp = 4 ms
20 W, tp = 2 ms
40 W, tp = 1 ms
60 W, tp = 0.66 ms
(a)
(b)
-40 °C
TJ= 25 °C
1
TJ=
TJ= 125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2) (3) (4)
VGD
IGD
0.1
0.001
VSK.170/250 series
0.01
0.1
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Transient Thermal Impedance ZthJC (K/W)
Fig. 23 - Gate Characteristics
1
0.1
Steady state value:
RthJC = 0.17 K/W
R thJC = 0.125 K/W
(DC Operation)
VSK.170.. series
VSK.250.. series
0.01
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
KT
250
1
2
3
-
20
PbF
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration (see dimensions - link at the end of datasheet)
3
-
Current rating
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
• None = standard production
• PbF = lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Revision: 12-Nov-2018
Document Number: 94417
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.170PbF, VS-VSK.250PbF Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
Two SCRs doubler circuit
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
KT
~
~
+
+
VSKT...
-
K1G1 G2K2
Available up to 2000 V, contact factory for different requirement
SCR/diode doubler circuit, positive control
KH
~
~
+
+
VSKH...
-
K1G1
Available up to 2000 V, contact factory for different requirement
SCR/diode doubler circuit, negative control
KL
~
~
+
+
VSKL...
-
-
Available up to 2000 V, contact factory for different requirement
Two SCRs common cathodes
KU
+
+
-
-
VSKU...
-
K1G1 G2 K2
Available up to 1200 V, contact factory for different requirement
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
Revision: 12-Nov-2018
Document Number: 94417
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
20 (0.79)
80 (3.15)
50 (1.97)
38 (1.5)
6
(0.24)
3 screws M8 x 1.25
28 (1.12)
6 (0.24)
9 (0.35)
10 (0.39)
HEX 13
52 (2.04)
51 (2.01)
32
(1.26)
115 (4.53)
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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www.vishay.com
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Disclaimer
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Document Number: 91000
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