VS-VSKT570-16PBF

VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor (Super MAGN-A-PAK Power Modules), 570 A FEATURES • High current capability • High surge capability • Industrial standard package • 3000 VRMS isolating voltage with non-toxic substrate • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Super MAGN-A-PAK TYPICAL APPLICATIONS • Motor starters • DC motor controls - AC motor controls PRIMARY CHARACTERISTICS • Uninterruptible power supplies  IT(AV) 570 A Type Modules - thyristor, standard Package Super MAGN-A-PAK MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) TC = 85 °C 570 IT(RMS) TC = 85 °C 894 ITSM I2t 50 Hz 18 000 60 Hz 18 800 50 Hz 1620 60 Hz 1473 I2t VDRM/VRRM UNITS A kA2s 16 200 kA2s 1600 V TStg Range -40 to +125 TJ Range -40 to +135 °C  ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM MAXIMUM AT TJ = TJ MAXIMUM mA VS-VSKT570-16PbF 16 1600 1700 110 Revision: 26-Jul-2018 Document Number: 94683 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current  at case temperature Maximum RMS on-state current Maximum peak, one-cycle,  non-repetitive on-state surge current SYMBOL IT(AV) IT(RMS) ITSM, IFSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2t for fusing I2t A 85 °C 894 A t = 10 ms No voltage reapplied 18.0 100 % VRRM reapplied 15.1 t = 8.3 ms t = 10 ms t = 10 ms I2t UNITS 570 180° conduction, half sine wave at TC = 85 °C t = 8.3 ms Maximum I2t for fusing VALUES t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 18.8 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 15.8 1620 1473 1146 Low level value or threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.59 VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.63 Low level value on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.41 High level value on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.38 Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.36 VTM Maximum holding current IH Maximum latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 1042 16 200 High level value of threshold voltage Maximum on-state voltage drop kA 500 1000 kA2s V m V mA SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, ITM = 400 A, VDRM applied Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C Typical turn-off time tq ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100  VALUES UNITS 1000 A/μs 2.0 μs 65 to 240 BLOCKING PARAMETER Maximum critical rate of rise  of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES UNITS TJ = TJ maximum, linear to VD = 80 % VDRM 1000 V/μs RMS insulation voltage VINS t=1s 3000 V Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 110 mA Revision: 26-Jul-2018 Document Number: 94683 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current +IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS VALUES TJ = TJ maximum, tp  5 ms 10 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 3.0 TJ = TJ maximum, tp  5 ms 20 5.0 200 TJ = 25 °C, Vak 12 V TJ = TJ maximum UNITS W A V mA 3.0 V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ -40 to +135 Maximum storage temperature range TStg -40 to +125 Maximum thermal resistance,  junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs 0.06 Mounting surface smooth, flat and greased 0.02 K/W Super MAGN-A-PAK to heatsink Mounting torque ± 10 % DC operation °C busbar to super MAGN-A-PAK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Approximate weight 6 to 8 Nm 12 to 15 1500 Case style See dimensions (link at the end of datasheet) g Super MAGN-A-PAK RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Jul-2018 Document Number: 94683 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF Vishay Semiconductors VSKT570-16PbF RthJC (DC) = 0.06 K/W 130 120 Ø 110 Conduction angle 100 90 60° 80 30° 180° 90° 120° 70 60 0 50 100 150 200 250 300 350 400 450 500 550 600 Average On-State Current (A) Maximum Average On-StatePower Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 1300 1200 1100 1000 900 800 700 600 500 40 400 300 200 100 0 Ø Conduction Period 100 90 80 60° 70 DC 180° 30° 60 120° 90° 50 0 100 200 300 400 500 600 700 800 900 Average On-state Current (A) Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) 110 600 RMS limit 400 Ø Conduction angle VSKT570-16PbF Per junction TJ = 130 °C 200 0 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-State Current (A) Maximum Average On-StatePower Loss (W) 180° 120° 90° 60° 30° 800 Ø Conduction period   VSKT570-16PbF Per junction Average On-State Current (A) 16 500 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 135 °C at 50 Hz 0.0100 s at 60 Hz 0.0083 s 15 500 14 500 13 500 12 500 11 500 10 500 9500 VSKT570-16PbF Per junction 8500 7500 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Ratings Characteristics 1000 RMS limit Fig. 4 - On-State Power Loss Characteristics VSKT570-16PbF RthJC (DC) = 0.06 K/W 120 DC 0 100 200 300 400 500 600 700 800 900 1000 1100 Fig. 1 - Current Ratings Characteristics 130 180° 120° 90° 60° 30° 17 000 15 000 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 135 °C Rated VRRM reapplied No voltage reapplied 13 000 11 000 9000 7000 0.01 VSKT570-16PbF Per junction 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 94683 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF Vishay Semiconductors Ø 800 Ø Conduction angle 600 400 200 VSKT570-16PbF 0 0 200 400 600 800 1000 1200 Total RMS Output Current (A) 900 800   = 0.09 - Delta R Rths_a 700 0.1 500 2K /W 6K /W 0.2  K/W 0. 1 500 400   1000 180° 120° 90° 60° 30° 0.3 K /W 0.4 K /W 0.6 K/W 300 200   1200 Maximum Total On-StatePower Loss (W) Maximum Total On-State Power Loss (W) www.vishay.com 100 0 0 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) ZthJC - Transient Thermal Impedance (K/W) Instantaneous On-State Current (A) Fig. 7 - On-State Power Loss Characteristics 10 000 1000 135 °C 25 °C 100 10 VSKT570-16PbF Per junction 1 0 0.5 1 1.5 2 Maximum Instantaneous On-State Voltage (V) Fig. 8 - On-State Voltage Drop Characteristics 0.1 VSKT570-16PbF Per junction 0.01 Steady state value R = 0.06 K/W (DC operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) IGD 0.1 0.001 0.01 TJ = 40 °C VGD TJ = 25 °C 1 tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (b) TJ = 130 °C Instantaneous Gate Voltage (V) 100 (1) VSK.570... Series 0.1 1 (2) (3) (4) Frequency limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 10 - Gate Characteristics Revision: 26-Jul-2018 Document Number: 94683 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT570-16PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS KT 1 570 - 3 2 16 PbF 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration (see below) 3 - Current rating 4 - Voltage code x 100 = VRRM 5 - Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKT 1 ~ + Two SCRs doubler circuit KT 2 3 - 4 (K1) 7 (K2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95283 Revision: 26-Jul-2018 Document Number: 94683 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode DIMENSIONS in millimeters (inches) 18 (0.71) max. 52 (2.05) 19 (0.75) Ø 6.5 mm ± 0.3 mm x 4 holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 1 3 2 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 5 4 6 7 28.0 (1.10) 48.0 (1.89) M10 17.8 (0.70) 9.9 ± 0.5 (0.39 ± 0.02) 60.0 (2.36) 48 (1.90) 17 (0.67) max. 4.5 (0.20) 36.4 (1.14) 5, 6 = Gate 4, 7 = Cathode 1.0 (0.039) 149.0 (5.67) Revision: 14-Dec-16 Document Number: 95283 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000