VS-VSKT570-16PbF
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Vishay Semiconductors
Thyristor/Thyristor
(Super MAGN-A-PAK Power Modules), 570 A
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 VRMS isolating voltage with non-toxic
substrate
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Super MAGN-A-PAK
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
PRIMARY CHARACTERISTICS
• Uninterruptible power supplies
IT(AV)
570 A
Type
Modules - thyristor, standard
Package
Super MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IT(AV)
TC = 85 °C
570
IT(RMS)
TC = 85 °C
894
ITSM
I2t
50 Hz
18 000
60 Hz
18 800
50 Hz
1620
60 Hz
1473
I2t
VDRM/VRRM
UNITS
A
kA2s
16 200
kA2s
1600
V
TStg
Range
-40 to +125
TJ
Range
-40 to +135
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-VSKT570-16PbF
16
1600
1700
110
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ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive on-state surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM,
IFSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum I2t for fusing
I2t
A
85
°C
894
A
t = 10 ms
No voltage
reapplied
18.0
100 % VRRM
reapplied
15.1
t = 8.3 ms
t = 10 ms
t = 10 ms
I2t
UNITS
570
180° conduction, half sine wave at TC = 85 °C
t = 8.3 ms
Maximum I2t for fusing
VALUES
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
18.8
Sinusoidal
half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
15.8
1620
1473
1146
Low level value or threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.59
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.63
Low level value on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.41
High level value on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.38
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse
1.36
VTM
Maximum holding current
IH
Maximum latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
1042
16 200
High level value of threshold voltage
Maximum on-state voltage drop
kA
500
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum rate of rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
TJ = TJ maximum, ITM = 400 A, VDRM applied
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical turn-off time
tq
ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100
VALUES
UNITS
1000
A/μs
2.0
μs
65 to 240
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to VD = 80 % VDRM
1000
V/μs
RMS insulation voltage
VINS
t=1s
3000
V
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
110
mA
Revision: 26-Jul-2018
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum peak average gate power
PG(AV)
Maximum peak positive gate current
+IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TEST CONDITIONS
VALUES
TJ = TJ maximum, tp 5 ms
10
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
3.0
TJ = TJ maximum, tp 5 ms
20
5.0
200
TJ = 25 °C, Vak 12 V
TJ = TJ maximum
UNITS
W
A
V
mA
3.0
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
-40 to +135
Maximum storage temperature range
TStg
-40 to +125
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink per module
RthC-hs
0.06
Mounting surface smooth, flat and greased
0.02
K/W
Super MAGN-A-PAK to heatsink
Mounting
torque
± 10 %
DC operation
°C
busbar to super MAGN-A-PAK
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound
Approximate weight
6 to 8
Nm
12 to 15
1500
Case style
See dimensions (link at the end of datasheet)
g
Super MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94683
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VS-VSKT570-16PbF
Vishay Semiconductors
VSKT570-16PbF
RthJC (DC) = 0.06 K/W
130
120
Ø
110
Conduction angle
100
90
60°
80
30°
180°
90°
120°
70
60
0
50 100 150 200 250 300 350 400 450 500 550 600
Average On-State Current (A)
Maximum Average On-StatePower Loss (W)
Maximum Allowable Case Temperature (°C)
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1300
1200
1100
1000
900
800
700
600
500
40
400
300
200
100
0
Ø
Conduction Period
100
90
80
60°
70
DC
180°
30°
60
120°
90°
50
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
Peak Half Sine Wave On-State Current (A)
Maximum Allowable Case Temperature (°C)
110
600
RMS limit
400
Ø
Conduction angle
VSKT570-16PbF
Per junction
TJ = 130 °C
200
0
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Peak Half Sine Wave On-State Current (A)
Maximum Average On-StatePower Loss (W)
180°
120°
90°
60°
30°
800
Ø
Conduction period
VSKT570-16PbF
Per junction
Average On-State Current (A)
16 500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 135 °C
at 50 Hz 0.0100 s
at 60 Hz 0.0083 s
15 500
14 500
13 500
12 500
11 500
10 500
9500
VSKT570-16PbF
Per junction
8500
7500
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 2 - Current Ratings Characteristics
1000
RMS limit
Fig. 4 - On-State Power Loss Characteristics
VSKT570-16PbF
RthJC (DC) = 0.06 K/W
120
DC
0 100 200 300 400 500 600 700 800 900 1000 1100
Fig. 1 - Current Ratings Characteristics
130
180°
120°
90°
60°
30°
17 000
15 000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 135 °C
Rated VRRM reapplied
No voltage reapplied
13 000
11 000
9000
7000
0.01
VSKT570-16PbF
Per junction
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
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VS-VSKT570-16PbF
Vishay Semiconductors
Ø
800
Ø
Conduction angle
600
400
200
VSKT570-16PbF
0
0
200
400
600
800
1000
1200
Total RMS Output Current (A)
900
800
= 0.09 - Delta R
Rths_a
700
0.1
500
2K
/W
6K
/W
0.2
K/W
0. 1
500
400
1000
180°
120°
90°
60°
30°
0.3 K
/W
0.4 K
/W
0.6 K/W
300
200
1200
Maximum Total On-StatePower Loss (W)
Maximum Total On-State Power Loss (W)
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100
0
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
ZthJC - Transient Thermal Impedance (K/W)
Instantaneous On-State Current (A)
Fig. 7 - On-State Power Loss Characteristics
10 000
1000
135 °C
25 °C
100
10
VSKT570-16PbF
Per junction
1
0
0.5
1
1.5
2
Maximum Instantaneous On-State Voltage (V)
Fig. 8 - On-State Voltage Drop Characteristics
0.1
VSKT570-16PbF
Per junction
0.01
Steady state value
R = 0.06 K/W
(DC operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω;
tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(a)
IGD
0.1
0.001
0.01
TJ = 40 °C
VGD
TJ = 25 °C
1
tp = 4 ms
tp = 2 ms
tp = 1 ms
tp = 0.66 ms
(b)
TJ = 130 °C
Instantaneous Gate Voltage (V)
100
(1)
VSK.570... Series
0.1
1
(2)
(3) (4)
Frequency limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 10 - Gate Characteristics
Revision: 26-Jul-2018
Document Number: 94683
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VS-VSKT570-16PbF
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ORDERING INFORMATION TABLE
Device code
VS-VS KT
1
570
-
3
2
16
PbF
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration (see below)
3
-
Current rating
4
-
Voltage code x 100 = VRRM
5
-
Lead (Pb)-free
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT CONFIGURATION CODE
CIRCUIT DRAWING
VSKT
1
~
+
Two SCRs doubler circuit
KT
2
3
-
4 (K1) 7 (K2)
5 (G1) 6 (G2)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95283
Revision: 26-Jul-2018
Document Number: 94683
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Outline Dimensions
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Vishay Semiconductors
Super MAGN-A-PAK Thyristor/Diode
DIMENSIONS in millimeters (inches)
18 (0.71) max.
52 (2.05)
19 (0.75)
Ø 6.5 mm ± 0.3 mm x 4 holes (Typ.)
31.0
(1.22)
44.0
(1.73)
50.0
(1.97)
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
1
3
2
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
5
4
6
7
28.0
(1.10)
48.0 (1.89)
M10
17.8
(0.70)
9.9 ± 0.5 (0.39 ± 0.02)
60.0 (2.36)
48 (1.90)
17 (0.67) max.
4.5 (0.20)
36.4 (1.14)
5, 6 = Gate
4, 7 = Cathode
1.0 (0.039)
149.0 (5.67)
Revision: 14-Dec-16
Document Number: 95283
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Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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