VS-VSKU71.., VS-VSKV71.. Series
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Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Thyristor, 75 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRIMARY CHARACTERISTICS
IT(AV)
75 A
Type
Modules - thyristor, standard
Package
AAP Gen 7 (TO-240AA)
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
85 °C
I2t
50 Hz
1300
60 Hz
1360
50 Hz
8.45
60 Hz
7.68
I2t
VRRM
84.5
Range
UNITS
75
115
IT(RMS)
ITSM
VALUES
A
kA2s
kA2s
400 to 1600
V
TStg
-40 to +125
°C
TJ
-40 to +125
°C
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
VS-VSK.71
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
Maximum continuous RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
75
DC
115
TC
80
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state current
ITSM
No voltage
reapplied
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
Maximum value of threshold voltage
I2t (1)
VT(TO) (2)
1360
1093
Initial TJ = TJ maximum
7.68
5.97
0.96
Low level (3)
rt (2)
Maximum on-state voltage drop
VTM
ITM = x IT(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
High level
(4)
A
TJ = TJ maximum
TJ = TJ maximum
TJ = 25 °C
kA2s
5.45
Low level (3)
Maximum value of on-state
slope resistance
°C
8.45
84.5
High level
A
1140
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
(4)
UNITS
1300
Sinusoidal
half wave,
initial TJ = TJ maximum
No voltage
reapplied
t = 8.3 ms
Maximum I2t for fusing
VALUES
180° conduction, half sine wave, TC = 85 °C
1.08
3.28
2.86
kA2s
V
m
1.72
V
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
mA
Notes
(1) I2t for time t = I2t x t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x x I
<
I
<
x
I
AV
AV
(4) I > x I
AV
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VALUES
PGM
12
PG(AV)
3.0
IGM
3.0
- VGM
10
VGT
W
A
4.0
TJ = - 40 °C
Maximum gate voltage required to trigger
UNITS
Anode supply = 6 V
resistive load
TJ = 25 °C
TJ = 125 °C
1.7
TJ = - 40 °C
270
Anode supply = 6 V
resistive load
TJ = 25 °C
V
2.5
mA
150
Maximum gate current required to trigger
IGT
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
VALUES
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
VALUES
UNITS
-40 to +125
°C
TJ = 125 °C
80
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = 125 °C, linear to 0.67 VDRM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.29
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
°C/W
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
JEDEC®
Case style
75
g
2.7
oz.
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
VSK.71..
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.052
0.062
0.079
0.116
0.197
0.037
0.064
0.085
0.121
0.200
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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VS-VSKU71.., VS-VSKV71.. Series
Maximum average on-state power loss (W)
130
RthJC (DC) = 0.29°C/W
120
110
100
90
180°
120°
90°
60°
30°
80
70
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
10
20
30
40
50
60
70
180°
120°
90°
60°
30°
160
140
120
100
DC
RMS limit
80
60
40
20
Per leg, Tj = 125°C
0
80
0
20
40
60
80
100
120
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
1200
130
RthJC (DC) = 0.29°C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
20
40
60
80
100
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1100
1000
900
800
700
600
Per leg
500
120
1
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
140
1400
180°
120°
90°
60°
30°
120
100
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
180
Average on-state current (A)
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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80
RMS limit
60
40
20
Per leg, Tj = 125°C
0
0
10
20
30
40
50
60
70
80
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
1200
1000
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
800
600
Per leg
400
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Maximum total power loss (W)
700
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
2 °C/W
180°
(sine)
180°
(rect)
600
500
400
∼
300
200
2 x VSK.71 Series
single phase bridge connected
Tj = 125°C
100
0
0
0
20 40 60 80 100 120 140 160 180
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
800
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
700
60°
(rect)
600
500
400
300
3 x VSK.71 Series
6-pulse midpoint
connection bridge
Tj = 125°C
200
100
0
0
50
0
100 150 200 250 300 350
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
Instantaneous on-state current (A)
1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage (V)
Fig. 9 - On-State Voltage Characteristics
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VS-VSKU71.., VS-VSKV71.. Series
Transient thermal impedance Z thJC (°C/W)
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Vishay Semiconductors
1
Steady state value
RthJC = 0.29 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 10 - Thermal Impedance ZthJC Characteristics
Rec tangular ga te pulse
a )Recommend ed load line for
ra ted di/ d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b )Recommend ed load line for
= 6 µs
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
(b)
1
TJ = -40 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
VSK.71
IRK.71../
.91.. Series Frequenc y Limited by PG(AV)
0.01
0.1
1
10
100
1000
Instantaneous gate current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-VS
K
U
71
1
2
3
4
/
16
5
2
-
Vishay Semiconductors product
Module type
3
-
Circuit configuration (see Circuit Configuration table)
4
-
Current code (75 A)
5
-
Voltage code (see Voltage Ratings table)
1
Note
• To order the optional hardware go to www.vishay.com/doc?95172
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
VSKU
(1)
+
1
Two SCRs common cathodes
2
U
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
VSKV
(1)
-
1
Two SCRs common anodes
V
2
+
(2)
3
4 5 7 6
+
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Revision: 26-Jul-2018
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: indmodules@vishay.com
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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