VS-VSKV105/08

VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A FEATURES • High voltage • Industrial standard package • UL approved file E78996 • Low thermal resistance • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRIMARY CHARACTERISTICS IT(AV) 105 A Type Modules - thyristor, standard Package AAP Gen 7 (TO-240AA) • Up to 1600 V • High surge capability • Easy mounting on heatsink MECHANICAL DESCRIPTION ELECTRICAL DESCRIPTION The AAP Gen 7 (TO-240AA), new generation of AAP module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS 85 °C I2t 50 Hz 2000 60 Hz 2094 50 Hz 20 60 Hz 18.26 I2t UNITS 105 165 IT(RMS) ITSM VALUES A kA2s 200 kA2s 400 to 1600 V TStg -40 to +130 °C TJ -40 to +130 °C VRRM Range Revision: 26-Jul-2018 Document Number: 94656 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 VS-VSK.105 IRRM, IDRM AT 130 °C mA 15 ON-STATE CONDUCTION PARAMETER Maximum average on-state current Maximum continuous RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C 105 DC 165 TC 78 t = 10 ms Maximum peak, one-cycle non-repetitive on-state current ITSM No voltage reapplied t = 8.3 ms 100 % VRRM reapplied t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t No voltage reapplied t = 8.3 ms 100 % VRRM reapplied t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum value of threshold voltage I2t (1) VT(TO) (2) VALUES Sinusoidal half wave, initial TJ = TJ maximum 1682 Initial TJ = TJ maximum 14.14 Low level (3) Maximum on-state voltage drop VTM ITM =  x IT(AV) Maximum non-repetitive rate of rise of turned on current dI/dt High level (4) TJ = TJ maximum TJ = TJ maximum TJ = 25 °C kA2s 12.91 0.98 rt (2) A 20 18.26 Low level (3) Maximum value of on-state  slope resistance °C 1760 200 High level A 2000 2094 t = 0.1 ms to 10 ms, no voltage reapplied  TJ = TJ maximum (4) UNITS 1.12 2.7 2.34 kA2s V m 1.8 V TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 250 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 mA Notes (1) I2t for time t = I2t x t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x  x I < I <  x I AV AV (4) I >  x I AV Revision: 26-Jul-2018 Document Number: 94656 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage TEST CONDITIONS VALUES PGM 12 PG(AV) 3.0 IGM 3.0 - VGM 10 VGT W A 4.0 TJ = - 40 °C Maximum gate voltage required to trigger UNITS Anode supply = 6 V resistive load TJ = 25 °C V 2.5 TJ = 125 °C 1.7 TJ = - 40 °C 270 Anode supply = 6 V resistive load Maximum gate current required to trigger IGT TJ = 25 °C mA Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA VALUES UNITS 20 mA 3000 (1 min) 3600 (1 s) V 1000 V/μs VALUES UNITS -40 to 130 °C 150 TJ = 125 °C 80 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state  leakage current at VRRM, VDRM IRRM, IDRM TJ = 130 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz Maximum critical rate of rise of off-state voltage dV/dt TJ = 130 °C, linear to 0.67 VDRM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating and storage  temperature range TEST CONDITIONS TJ, TStg Maximum internal thermal resistance, junction to case per leg RthJC DC operation 0.22 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.1 °C/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink Mounting torque ± 10 % busbar 4 Nm 3 Approximate weight JEDEC® Case style 75 g 2.7 oz. AAP Gen 7 (TO-240AA) R CONDUCTION PER JUNCTION DEVICES VSK.105.. SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 26-Jul-2018 Document Number: 94656 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series Maximum average on-state power loss (W) 130 RthJC (DC) = 0.22°C/W 120 110 100 90 180° 120° 90° 60° 30° 80 70 0 Maximum allowable case temperature (°C) Vishay Semiconductors 20 40 60 80 100 120 180° 120° 90° 60° 30° DC RMS limit Per leg, Tj = 130°C 0 20 40 60 80 100 120 140 160 180 Average on-state current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics 1800 130 RthJC (DC) = 0.22°C/W 120 110 100 DC 180° 120° 90° 60° 30° 90 80 70 0 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1600 1400 1200 1000 Per leg 800 1 20 40 60 80 100 120 140 160 180 10 100 Number of equal amplitude half cycle current pulses (N) Average on-state current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 2000 200 180° 120° 90° 60° 30° 180 160 140 120 Peak half sine wave on-state current (A) Maximum average on-state power loss (W) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Average on-state current (A) Peak half sine wave on-state current (A) Maximum allowable case temperature (°C) www.vishay.com RMS limit 100 80 60 40 20 Per leg, Tj = 130°C 0 0 20 40 60 80 100 120 Average on-state current (A) Fig. 3 - On-State Power Loss Characteristics 1800 1600 Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 130°C No Voltage Reapplied Rated Vrrm reapplied 1400 1200 1000 800 0.01 Per leg 0.1 1 Pulse train duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-2018 Document Number: 94656 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors Maximum total power loss (W) 700 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 2 °C/W 180° (sine) 180° (rect) 600 500 400 ∼ 300 200 2 x VSK.105 Series single phase bridge connected Tj = 130°C 100 0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Total output current (A) Fig. 7 - On-State Power Loss Characteristics Maximum total power loss (W) 900 RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 800 60° (rect) 700 600 500 400 300 3 x VSK. 105 Series 6-pulse midpoint connection bridge Tj = 125°C 200 100 0 0 100 200 0 400 300 20 40 60 80 100 120 140 Maximum allowable ambient temperature (°C) Total output current (A) Fig. 8 - On-State Power Loss Characteristics Instantaneous on-state current (A) 1000 Per leg 100 10 Tj = 130°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous on-state voltage (V) Fig. 9 - On-State Voltage Characteristics Revision: 26-Jul-2018 Document Number: 94656 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series Transient thermal impedance Z thJC (°C/W) www.vishay.com Vishay Semiconductors 1 Steady state value RthJC = 0.22 °C/W (DC operation) 0.1 0.01 Per leg 0.001 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs 10 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 25 °C 1 TJ = -40 °C (b) TJ = 125 °C Instantaneous gate voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 Frequenc y Limited by PG(AV) VSK. IRK.105.. Series 0.01 0.1 1 10 100 1000 Instantaneous gate current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS-VS 1 K U 105 2 3 4 / 16 5 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration (see Circuit Configuration table) 4 - Current code (105 A) 5 - Voltage code (see Voltage Ratings table) Note • To order the optional hardware go to www.vishay.com/doc?95172 Revision: 26-Jul-2018 Document Number: 94656 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKU105.., VS-VSKV105.. Series www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING VSKU (1) + 1 Two SCRs common cathodes 2 U (2) 3 4 5 7 6 (3) G1 K1 K2 G2 (4) (5) (7) (6) VSKV (1) - 1 Two SCRs common anodes V 2 + (2) 3 4 5 7 6 + (3) G1 K1 K2 G2 (4) (5) (7) (6) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95368 Revision: 26-Jul-2018 Document Number: 94656 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Thyristor DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 30 ± 1 (1.18 ± 0.039) 15.5 ± 0.5 (0.6 ± 0.020) 24 ± 0.5 (1 ± 0.020) Viti M5 x 0.8 Screws M5 x 0.8 6.7 ± 0.3 (0.26 ± 0.012) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) Document Number: 95368 Revision: 11-Nov-08 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 5.8 ± 0.25 (0.228 ± 0.010) 15 ± 0.5 (0.59 ± 0.020) For technical questions, contact: indmodules@vishay.com 4 ± 0.2 (0.157 ± 0.008) 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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