VS-VSUD360CW40

VS-VSUD360CW40 www.vishay.com Vishay Semiconductors FRED Pt® Ultrafast Soft Recovery Diode Module, 360 A FEATURES Lug terminal anode 1 Lug terminal anode 2 • Very low Qrr and trr • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Base common cathode TO-244 • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRIMARY CHARACTERISTICS IF(AV) 360 A DESCRIPTION / APPLICATIONS VR 400 V Qrr (typical) 243 nC FRED Pt® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are a significant portion of the total losses. trr 74 ns Type Modules - diode, FRED Pt® Package TO-244 Circuit configuration Two diodes common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation Operating junction and storage temperatures SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR IF(AV) IFSM PD TC = 25 °C 510 TC = 85 °C 305 TC = 116 °C 180 TC = 25 °C 2880 TC = 25 °C 570 TC = 110 °C 180 TJ, TStg A W -40 to +150 °C ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 180 A MIN. TYP. MAX. 400 - - - 1.09 1.27 UNITS V IF = 360 A - 1.23 1.50 IF = 180 A, TJ = 150 °C - 0.88 0.96 IF = 360 A, TJ = 150 °C - 1.04 1.18 TJ = 150 °C, VR = VR rated - 0.26 1.28 mA - 5 - nH Forward voltage VFM Reverse leakage current IRM Series inductance LS From top of terminal hole to mounting plane Revision: 14-Dec-2018 Document Number: 93116 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD360CW40 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 150 °C Peak recovery current IRRM Reverse recovery charge Qrr IF = 180 A, dIF/dt = 200 A/μs, VR = 200 V MIN. TYP. MAX. - 40 69 - 74 - - 171 - IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 5.1 IF = 180 A, dIF/dt = 200 A/μs, VR = 200 V - 6.6 - IF = 180 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 150 °C - 15.2 - UNITS ns A IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 125 IF = 180 A, dIF/dt = 200 A/μs, VR = 200 V - 243 - IF = 180 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 150 °C - 1295 - MIN. TYP. MAX. - - 0.19 - - 0.095 - 0.10 - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case per leg TEST CONDITIONS RthJC Thermal resistance, junction-to-case per module Thermal resistance, case-to-heatsink (flag greased surface) RthCS Weight 68 - g - 2.4 - oz. Mounting torque 30 (3.4) - 40 (4.6) 12 (1.4) - 18 (2.1) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 2" lever pull - - 35 Case style lbf · in (N · m) lbf · in TO-244 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) °C/W - Mounting torque center hole 100 10 TJ = 25 °C TJ = 125 °C 1 93116_01 UNITS TJ = 150 °C 100 10 TJ = 25 °C 1 0.1 0 0.5 1.0 1.5 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) 2.0 0 93116_02 100 200 300 400 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) Revision: 14-Dec-2018 Document Number: 93116 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD360CW40 www.vishay.com Vishay Semiconductors 240 160 150 220 360 A 180 A 90 A 140 DC 200 trr (ns) TC - Maximum Allowable Case Temperature RthJC = 0.19 K/W 130 D = 0.5 180 120 160 110 100 0 93116_03 50 100 150 140 100 200 IDC - Current Rating (A) 200 400 500 dIF/dt (A/µs) 93116_04 Fig. 3 - Maximum Current Rating Capability (Per Leg) 300 Fig. 4 - Typical Reverse Recovery Time vs. dIF/dt TJ = 125 °C (Per Leg) 200 Forward Power Loss (W) RMS limit 150 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.25 D = 0.50 100 50 DC 0 0 50 100 150 200 Forward Current (A) 93116_05 Fig. 5 - Forward Power Loss Characteristics VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 6 - Reverse Recovery Parameter Test Circuit Revision: 14-Dec-2018 Document Number: 93116 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSUD360CW40 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 7 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS-VS UD 1 2 360 C W 40 3 4 5 6 1 - Vishay Semiconductors product 2 - Type of device: UD = FRED Pt® 3 - Current rating (360 = 360 A) 4 - Circuit configuration: 5 - Type of device: 6 - Voltage rating (40 = 400 V) C = two diodes common cathode W = TO-244 wire bondable not insulated CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lug terminal anode 2 Two diodes common cathode C Base common cathode Lug terminal anode 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 14-Dec-2018 Document Number: 93116 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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