VSB3200
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
TMBS®
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-201AD
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
200 V
IFSM
90 A
VF at IF = 3.0 A
0.63 V
TJ max.
150 °C
Package
DO-201AD
Diode variation
Single
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
SYMBOL
VSB3200
UNIT
VRRM
200
V
Max. average forward rectified current (fig. 1)
IF(AV) (1)
3.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
90
A
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
Revision: 14-Aug-13
Document Number: 89144
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSB3200
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
Instantaneous forward voltage (1)
IF = 3.0 A
Reverse current per diode (2)
VR = 200 V
Typical juntion capacitance
4.0 V, 1 MHz
SYMBOL
TYP.
VBR
200 (minimum)
-
0.86
1.20
0.63
0.71
TA = 25 °C
TA = 25 °C
VF
TA = 125 °C
TA = 25 °C
IR
TA = 125 °C
CJ
MAX.
UNIT
V
1.6
60
μA
1.2
9
mA
175
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB3200
RJA
62
RJL
9
Typical thermal resistance (1)
UNIT
°C/W
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSB3200-M3/54
1.08
54
1400
13" diameter paper tape and reel
VSB3200-M3/73
1.08
73
1000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.4
D = 0.8
Resistive or Inductive Load
3.0
D = 0.3 D = 0.5
2.0
Average Power Loss (W)
Average Forward Rectified Current (A)
3.5
2.5
2.0
1.5
1.0
D = 0.2
1.6
D = 0.1
D = 1.0
1.2
T
0.8
0.4
0.5
D = tp/T
0.375" (9.5 mm) Lead Length
0
tp
0
0
25
50
75
100
125
150
175
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 14-Aug-13
Document Number: 89144
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSB3200
www.vishay.com
Vishay General Semiconductor
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TA = 125 °C
1
TA = 100 °C
0.1
100
TA = 25 °C
10
0.01
0
0.2
0.4
0.6
0.8
1.0
0.1
1.2
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
Transient Thermal Impedance (°C/W)
10
Instantaneous Reverse Current (mA)
1
Instantaneous Forward Voltage (V)
TA = 150 °C
1
TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20
30
40
50
60
70
80
90
Junction to Lead
10
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 14-Aug-13
Document Number: 89144
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
