VSIB6A20-E3/45

New Product VSIB6A20 thru VSIB6A80 Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • UL recognition file number E54214 • Thin single in-line package • Glass passivated chip junction • High surge current capability ~ • High case dielectric strength of 1500 VRMS ~ ~ ~ • Solder dip 260 °C, 40 s Case Style GSIB-5S • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. PRIMARY CHARACTERISTICS IF(AV) 6.0 A VRRM 200 V to 800 V IFSM 150 A MECHANICAL DATA Case: GSIB-5S IR 10 µA Epoxy meets UL 94 V-0 flammability rating VF 1.0 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSIB6A20 VSIB6A40 VSIB6A60 VSIB6A80 UNIT Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V VDC 200 400 600 800 V Maximum DC blocking voltage Maximum average forward rectified output current at TC = 100 °C TA = 25 °C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range IF(AV) 6.0 (1) 2.8 (2) A IFSM 150 A I2t 93 A2 s TJ, TSTG - 55 to + 150 °C Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length Document Number: 84657 Revision: 15-Dec-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product VSIB6A20 thru VSIB6A80 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VSIB6A20 VSIB6A40 VSIB6A60 VSIB6A80 UNIT Maximum instantaneous forward voltage drop per diode 3.0 A VF 1.00 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C TA = 125 °C IR 10 250 µA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSIB6A20 VSIB6A40 RθJA RθJC Typical thermal resistance VSIB6A60 VSIB6A80 UNIT (2) 22 3.4 (1) °C/W Notes: (1) Unit case mounted on aluminum plate heatsink (2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length (3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSIB6A60-E3/45 7.0 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Peak Forward Surge Current (A) Average Forward Output Current (A) 8 Heatsink Mounting, TC 6 4 P.C.B. Mounting, TA 2 0 TJ = TJ Max. Single Sine-Wave 100 50 1.0 Cycle 0 0 50 100 150 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 84657 Revision: 15-Dec-08 New Product VSIB6A20 thru VSIB6A80 Vishay General Semiconductor 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 25 °C TJ = 125 °C 0.1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 10 1 0.1 1.2 100 10 Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 1 Instantaneous Forward Voltage (V) TJ = 150 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 10 1 0.01 20 40 60 80 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in millimeters Case Style GSIB-5S 4.6 ± 0.2 3.5 ± 0.2 11 ± 0.2 20 ± 0.3 5 + 3.2 ± 0.2 3.6 ± 0.2 30 ± 0.3 2.2 ± 0.2 1 ± 0.1 10 ± 0.2 Document Number: 84657 Revision: 15-Dec-08 7.5 ± 0.2 7.5 ± 0.2 2.7 ± 0.2 17.5 ± 0.5 4 ± 0.2 2.5 ± 0.2 0.7 ± 0.1 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000