VSK.F180..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3000 VRMS isolating voltage
• Industrial standard package
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
IT(AV)
180 A
Type
Modules - Thyristor, Fast
These series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
180
A
85
°C
400
ITSM
I2t
50 Hz
7130
60 Hz
7470
50 Hz
255
60 Hz
232
I2t
2550
tq
20/25
trr
2
VDRM/VRRM
TJ
Range
A
kA2s
kA2s
μs
800/1200
V
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSK.F180-
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
08
800
800
12
1200
1200
Document Number: 93685
Revision: 19-Jul-10
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IRRM/IDRM MAXIMUM
AT TJ = 125 °C
mA
50
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1
VSK.F180..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
ITM
100 µs
180° el
180° el
50 Hz
370
530
565
800
2400
3150
400 Hz
435
650
670
1000
1540
2050
2500 Hz
290
430
490
720
610
830
5000 Hz
240
345
390
540
390
540
10 000 Hz
170
270
290
390
-
-
Recovery voltage Vr
Voltage before turn-on Vd
50
50
50
80 % VDRM
80 % VDRM
80 % VDRM
Rise of on-state current dl/dt
Case temperature
50
-
85
Equivalent values for RC circuit
60
60
A/μs
85
10/0.47
A
V
-
85
10/0.47
UNITS
60
°C
/μF
10/0.47
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS current
IT(AV)
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
400
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum
I2t
for fusing
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
7470
Sinusoidal half wave,
initial TJ = TJ maximum
6280
255
232
180
164
t = 0.1 ms to 10 ms, no voltage reapplied
2550
Low level value or threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.30
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.38
Low level value on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.90
High level value on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.71
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.84
Maximum on-state voltage drop
VTM
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A
1000
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2
A
6000
100 % VRRM
reapplied
t = 8.3 ms
I2t
°C
7130
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
UNITS
180
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VALUES
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kA2s
kA2s
V
m
V
mA
Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 180 A
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
dI/dt
TEST CONDITIONS
VALUES
K
J
Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM
TJ = 25 °C
trr
ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C
tq
ITM = 750 A; TJ = 125 °C; dI/dt = - 25 A/μs;
VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM
800
UNITS
A/μs
2
20
μs
25
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise
of off-state voltage
dV/dt
TEST CONDITIONS
VALUES
UNITS
TJ = 125 °C, exponential to 67 % VDRM
1000
V/μs
3000
V
50
mA
VALUES
UNITS
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C, rated VDRM/VRRM applied
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum peak average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TEST CONDITIONS
f = 50 Hz, d% = 50
60
TJ = 125 °C, f = 50 Hz, d% = 50
10
TJ = 125 °C, tp 5 ms
TJ = 25 °C, Vak 12 V, Ra = 6
TJ = 125 °C, rated VDRM applied
W
10
A
5
V
200
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.125
Maximuml thermal resistance,
case to heatsink per module
RthCS
Mounting surface, flat and greased
0.02
Mounting torque ± 10 %
Approximate weight
K/W
MAP to heatsink
busbar to MAP
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used
and restrained during tightening. Threads must be
lubricated with a compound.
Case style
Document Number: 93685
Revision: 19-Jul-10
°C
4 to 6
(35 to 53)
N·m
(lbf · in)
500
g
17.8
oz.
MAGN-A-PAK
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3
VSK.F180..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
RthJC CONDUCTION
CONDUCTIONS ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.010
0.011
90°
0.014
0.015
60°
0.020
0.020
30°
0.032
0.033
TEST CONDITIONS
UNITS
TJ = 125 °C
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
350
VSK.F180.. Series
R thJC (DC) = 0.125 K/W
120
110
C o n d u ctio n A n g le
100
90
30°
80
60°
90°
120°
70
180°
60
0
40
80
120
160
200
M axim um Ave rag e O n -state Pow er Lo ss (W )
M a xim um A llo w a ble C ase Tem pera ture (°C )
130
1 80°
1 20°
90°
60°
30°
300
250
200
RM S Lim it
150
C ond uctio n An gle
100
VSK.F1 80 .. Series
Per Ju n ction
T J = 1 25 °C
50
0
0
Averag e O n -state C urren t (A )
C o n d u c tio n Pe rio d
90
3 0°
6 0°
80
9 0°
1 2 0°
70
1 80°
DC
60
0
50
100
150
200
250
300
Averag e O n-state C urren t (A)
Fig. 2 - Current Ratings Characteristics
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80 100 120 140 160 180
Fig. 3 - On-State Power Loss Characteristics
M axim um Av erag e O n-state Po w e r Loss (W )
M ax im um Allow a ble C ase Tem pera ture (°C )
110
100
60
450
VSK.F1 8 0 .. Se ries
R thJC (D C ) = 0 .1 2 5 K /W
120
40
A ve ra g e O n-sta te C urre n t (A)
Fig. 1 - Current Ratings Characteristics
130
20
DC
180°
120°
90°
60°
30°
400
350
300
250
200 RM S Lim it
C on d u c tio n Pe riod
150
100
VSK.F18 0.. Series
Per Junction
T J = 12 5 °C
50
0
0
50
100
150
200
250
300
A verag e O n-sta te C urre n t (A )
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 180 A
1
A t A ny Rate d Loa d C o nd itio n A nd W ith
Rate d V R RM A p plie d Fo llo w ing Surg e .
In itial T J = 125 °C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
6000
5500
5000
4500
4000
3500
VSK.F18 0.. S eries
Pe r Jun ctio n
3000
1
10
Ste a dy Sta te V a lue:
Transient Therm al Im pedanc e ZthJC (K/W )
Pea k Ha lf Sine W a ve O n -state C urren t (A)
6500
R thJ C = 0.125 K/W
(D C O p eratio n)
0.1
0.01
VSK.F180 .. Series
Per Junctio n
0.001
0.001
100
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
1
10
100
Fig. 8 - Thermal Impedance ZthJC Characteristics
320
M a xim um No n Rep etitiv e Surg e C urrent
Vers us Pulse Tra in D ura tio n . C ontro l
O f C o nduction May Not Be Maintained.
In itial T J = 125 °C
N o V o lta g e R e a p p lie d
Ra te d VRR M R e a pp lie d
7000
6500
6000
5500
5000
4500
4000
3500
VSK.F180.. Series
Pe r Jun ctio n
3000
2500
0 .0 1
0 .1
1
M axim u m Re verse Rec ove ry C h arg e - Q rr (μC )
7500
Pe a k H alf Sin e W av e O n-state C urre n t (A )
0.1
Sq u are W a ve Pulse D ura tio n (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pu lse Train D uration (s)
I TM = 1000 A
500 A
300 A
200 A
100 A
300
280
260
240
220
200
180
160
140
120
VSK.F 180.. Se ries
T J = 125 °C
100
80
10
20
30
40
50
60
70
80
90 100
Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/μs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
180
1000
T J = 25 °C
T J = 12 5 °C
VSK.F1 80.. Series
Per Ju n ctio n
100
1
2
3
4
5
6
7
In sta n ta n e o us O n -sta te V olta g e (V )
Fig. 7 - On-State Voltage Drop Characteristics
Document Number: 93685
Revision: 19-Jul-10
M axim um Re verse Rec o very C urre nt - Irr (A)
Instan ta neous O n -state C urren t (A )
0.01
I TM= 1000A
5 00A
3 00A
2 00A
1 00A
160
140
120
100
80
60
VSK.F180.. Series
T J = 125 °C
40
20
10
20
30
40
50
60
70
80
90 100
Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/μs)
Fig. 10 - Reverse Recovery Current Characteristics
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VSK.F180..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 180 A
1E4
P eak On-state C urre nt ( A)
40 0
150
1E3
1000
400
1000
50 H z
150
50 H z
2 50 0
2 50 0
5 00 0
5 00 0
1E2
tp
Snub b er circuit
R s = 10 ohm s
C s = 0.47 μF
V D = 80% V D R M
VSK .F180.. Serie s
Sinuso id a l p ulse
T C = 85 °C
1E1
1E1
1E2
tp
1E4
1E4
1E3
Snub b e r circ uit
R s = 10 ohm s
C s = 0.47 μF
V D = 80% V D RM
VSK .F 180.. Series
Sinusoid a l pulse
T C = 60 °C
1E1
1E1
1E2
1E3
1E4
Pulse Basewid th (μs)
Pulse Ba sewid th (μs)
Fig. 11 - Frequency Characteristics
Pea k On -sta te C urrent (A )
1E4
50 H z
50 H z
150
1E3
1 00 0
150
40 0
400
1 00 0
2 50 0
2 50 0
5 00 0
5000
1E2
tp
Snub b er circuit
R s = 10 ohm s
C s = 0.47 μF
V D = 80% V D R M
VSK .F180.. Series
Tra p ezo id a l p ulse
T C = 8 5 °C d i/d t 50A/μs
1E1
1E1
1E2
tp
1E41E4
1E3
Snub b er circuit
R s = 10 ohm s
C s = 0.47 μF
V D= 80% V D RM
VSK .F180.. Series
Tra p ezoid a l p ulse
T C = 85 °C d i/d t 100A/μs
1E1
E1
1E2
1E3
1E4
Pulse Base w idth (μs)
Pulse Base w id th (μs)
Fig. 12 - Frequency Characteristics
1E4
P eak O n -sta te C urren t (A )
50 H z
50 H z
1 50
150
40 0
1E3
400
1 00 0
1 00 0
2 50 0
2 50 0
5 00 0
5000
1E2
tp
1E1
1E1
Snub b er circuit
R s = 10 ohm s
C s = 0.47 μF
V D = 80% V D R M
VSK .F1 80.. Se rie s
Tra p ezoid a l p ulse
T C = 60 °C d i/d t 50A/μs
1E2
1E3
1E41E4
tp
1E1
Snub b e r circuit
R s = 10 ohm s
C s = 0.47 μF
V D = 80% V D R M
VSK .F 180.. Series
Tra p ezoid a l p ulse
T C = 60 °C d i/d t 100A/μs
1E2
1E3
1E4
Pulse Ba se w idth (μs)
Pulse Basewidth (μs)
Fig. 13 - Frequency Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93685
Revision: 19-Jul-10
VSK.F180..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 180 A
1E4
10 jou les p er p u lse
5
10 jou les p er p ulse
2 .5
5
2 .5
P ea k O n -state C urre n t ( A)
1
1
0 .5
0 .2 5
1E3
0 .5
0 .25
0 .1
0 .1
0 .0 5
0 .0 5
1E2
tp
VSK.F180.. Series
Tra p ezo id a l p ulse
d i/d t 50A /μs
VSK.F 180.. Series
Sinuso id a l p ulse
1E1
1E1
tp
1E2
1E1
E1
1E41E4
1E3
1E2
1E3
1E4
Pulse Ba se w idth (μs)
Pulse Base w id th (μs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Recta n g u lar g a te p u lse
a ) R eco m m en ded lo a d lin e fo r
ra ted d i/d t : 1 0V , 1 0o hm s
b ) Reco m m en d ed lo a d line fo r
