VSLY3850

VSLY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 850 nm • High speed • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 18° 94 8636 • Suitable for high pulse current operation • Good spectral matching with CMOS cameras DESCRIPTION SurfLightTM As part of the portfolio, the VSLY3850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted T1 plastic package. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • 3D TV application • Light curtains PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 70 ± 18 850 10 VSLY3850 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSLY3850 VSLY3850-ASZ PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 190 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction / ambient Rev. 1.4, 14-Jan-16 Document Number: 82395 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY3850 www.vishay.com Vishay Semiconductors 200 120 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 300 K/W 80 60 40 100 80 60 RthJA = 300 K/W 40 20 20 0 0 0 10 22322 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 22323 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF - 1.65 1.9 V IF = 1 A, tp = 100 μs VF - 2.9 - V IF = 1 mA TKVF - -1.45 - mV/K IF = 10 mA TKVF - -1.25 - mV/K Reverse current Junction capacitance IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 Not designed for reverse operation - 35 70 105 mW/sr - 600 - mW/sr φe - 55 - mW IF = 1 mA TKϕe - -0.35 - %/K ϕ - ± 18 - deg Peak wavelength IF = 30 mA λp 840 850 870 nm Spectral bandwidth IF = 30 mA Δλ - 30 - nm Temperature coefficient of lp IF = 30 mA TKλp - 0.25 - nm Rise time IF = 100 mA, 20 % to 80 % tr - 10 - ns Fall time IF = 100 mA, 20 % to 80 % tf - 10 - ns Radiant power Temperature coefficient of radiant power - IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms μA 125 Radiant intensity CJ UNIT Angle of half intensity Rev. 1.4, 14-Jan-16 pF Document Number: 82395 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY3850 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 10 Radiant Power (mW) 1 0.1 10 1 e- 0.01 100 0.1 0.001 0 0.5 1 1.5 2 2.5 3 3.5 VF - Forward Voltage (V) 22097 1 Fig. 3 - Forward Current vs. Forward Voltage 1 Φe, rel - Relative Radiant Power IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 16031 0.1 1 10 IF = 30 mA 0.75 0.5 0.25 0 650 100 tp - Pulse Duration (ms) 750 0° Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 100 10 tp = 100 µs 1 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 0.01 0.1 1 21355 0.6 0.4 0.2 0 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.4, 14-Jan-16 950 Fig. 7 - Relative Radiant Power vs. Wavelength 1000 21951 850 λ - Wavelength (nm) 21776-1 Fig. 4 - Pulse Forward Current vs. Pulse Duration 0.1 0.001 1000 Fig. 6 - Radiant Power vs. Forward Current Tamb < 50 °C tp/T = 0.01 1000 10 100 IF - Forward Current (mA) 16971 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 82395 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY3850 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A < 0.6 (2.5) 3.4 ± 0.15 R1.4 (sphere) AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 4.4 ± 0.3 3.2 ± 0.15 C Ø 2.9 ± 0.1 1.5 ± 0.5 + 0.15 0.5 + 0.2 - 0.1 0.4 - 0.05 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5264.01-4 Issue: 4; 28.07.14 Rev. 1.4, 14-Jan-16 Document Number: 82395 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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