VSLY5940

VSLY5940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 22114 DESCRIPTION As part of the SurfLightTM portfolio, the VSLY5940 is an infrared, 940 nm emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed, molded in a clear, untinted plastic package, with a parabolic lens. Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: p = 940 nm High reliability High radiant power High radiant intensity Narrow angle of half intensity:  = ± 3° Suitable for high pulse current operation Good spectral matching with CMOS cameras Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors • IR Flash PRODUCT SUMMARY COMPONENT Ie (mW/sr)  (deg) p (nm) tr (ns) 600 ±3 940 10 VSLY5940 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS VSLY5940 ORDERING CODE Bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ VSLY5940-CS21 Reel MOQ: 5000 pcs, 1000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current SYMBOL VALUE UNIT VR 5 V IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 190 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t  5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.2, 29-May-15 Document Number: 84240 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY5940 www.vishay.com Vishay Semiconductors 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 22116 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 22115 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.65 1.9 IF = 1 A, tp = 100 μs VF 2.9 V IF = 1 mA TKVF -1.45 mV/K IF = 10 mA TKVF -1.25 mV/K IR not designed for reverse operation μA VR = 0 V, f = 1 MHz, E = 0 Cj 125 IF = 100 mA, tp = 20 ms Ie Reverse current Junction capacitance Radiant intensity MIN. 300 600 UNIT V pF 900 mW/sr IF = 1 A, tp = 100 μs Ie 5100 IF = 100 mA, tp = 20 ms e 55 mW IF = 100 mA TKe -0.35 %/K Peak wavelength IF = 100 mA p Spectral bandwidth IF = 100 mA  35 nm Temperature coefficient of p IF = 100 mA TKp 0.25 nm/K Rise time IF = 100 mA tr 10 ns Fall time IF = 100 mA tf 10 ns Radiant power Temperature coefficient of e  Angle of half intensity Rev. 1.2, 29-May-15 mW/sr ±3 920 940 deg 960 nm Document Number: 84240 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY5940 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Tamb < 50 °C tp/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 1 e- 0.2 100 0.5 100 0.01 0.1 0.1 1 10 100 tp - Pulse Duration (ms) 16031 1 Fig. 3 - Pulse Forward Current vs. Pulse Duration Ie, rel - Relative Radiant Intensity (%) 100 tp = 100 µs 1 0.1 0.01 0.001 0.5 1 1.5 2 2.5 3 IF = 20 mA 90 80 70 60 50 40 30 20 10 0 800 3.5 850 900 950 Fig. 4 - Forward Current vs. Forward Voltage 1050 Fig. 7 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity 10 000 1000 100 10 1000 λ - Wavelength (nm) VF - Forward Voltage (V) 22097 tP = 100 µs 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement 0 Ie - Radiant Intensity (mW/sr) 1000 Fig. 6 - Radiant Power vs. Forward Current 10 IF - Forward Current (A) 10 100 IF - Forward Current (mA) 16971 80° 0.7 1 0.001 22117 0.01 0.1 Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.2, 29-May-15 1 22132 0.6 0.4 0.2 0 IF - Forward Current (A) Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84240 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLY5940 www.vishay.com Vishay Semiconductors 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C technical drawings according to DIN specifications Chip position A 5.4 ± 0.3 Ø 5 ± 0.15 8.6 ± 0.3 < 0.7 35.85 ± 0.5 12.88 ± 0.3 7.6 ± 0.15 Parabolic lens 0.75 - 0.12 0.63 2.54 nom. Drawing-No.: 6.544-5385.01-4 Issue: 2; 08.03.10 1.5 ± 0.25 Aera not plane 0.5 Not indicated tolerances ± 0.1 20531 Rev. 1.2, 29-May-15 Document Number: 84240 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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