VSMA1085400

VSMA1085400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface-mount • Package form: high power SMD with lens • Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.45 • Centroid wavelength: λcentroid = 850 nm • Angle of half intensity: ϕ = ± 40° • Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed) • Low thermal resistance: 6 K/W < RthJSP < 9 K/W • ESD: up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001) • Floor life: 168 h, MSL 3, according to J-STD-020E • Lead (Pb)-free reflow soldering LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models APPLICATIONS DESCRIPTION • Driver and occupant monitoring SurfLightTM As part of the portfolio, the VSMA1085400 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. • Eye tracking • Safety and security, CCTV PRODUCT SUMMARY COMPONENT Ie (mW/sr) at IF = 1.0 A ϕ (°) λp (nm) λcentroid (nm) tr (ns) VSMA1085400 925 ± 40 860 850 10 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMA1085400 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note • MOQ: minimum order quantity Rev. 1.4, 08-Jul-2022 Document Number: 80294 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current Surge forward current tp = 100 μs Power dissipation Junction temperature SYMBOL VALUE UNIT VR 5 V IF 1.5 A IFSM 5 A PV 5.33 W Tj 145 °C Ambient temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Soldering temperature According to Fig. 11, J-STD-020E Tsd 260 °C JESD 51 RthJSP,real 6 to 9 K/W JESD 51 RthJA,real 150 K/W According to ANSI / ESDA / JEDEC JS-001 VESD 5 kV Thermal resistance junction to solder point real (1) Thermal resistance junction to ambient real ESD sensitivity Note (1) Thermal resistance junction to solder point real has been measured with the part mounted on an ideal heatsink and the optical output power has been deducted from the total electrical power dissipation Axis Title Axis Title 10000 6 1.6 10000 RthJSP = 9 K/W 3 100 2 1 RthJSP = 6 K/W 1.2 1000 1.0 1st line 2nd line 1000 4 2nd line IF - Forward Current (A) 1.4 5 1st line 2nd line 2nd line PV - Power Dissipation (W) RthJSP = 6 K/W RthJSP = 9 K/W 0.8 0.6 100 0.4 0.2 10 0 0 20 40 60 80 100 120 140 10 0 0 20 40 60 80 100 120 140 TSP - Solder Point Temperature (°C) TSP - Solder Point Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Solder Point Temperature Fig. 2 - Forward Current Limit vs. Solder Point Temperature Rev. 1.4, 08-Jul-2022 Document Number: 80294 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 0.35 A, tp = 10 ms VF 2.7 2.95 3.1 V IF = 1 A, tp = 100 μs VF 2.8 3.1 3.3 V IF = 1.5 A, tp = 100 μs VF 2.9 3.25 3.55 V IF = 5 A, tp = 100 μs VF 3.2 3.9 4.4 V - -2 - mV/K IF = 1 A, tp = 200 μs Reverse current IR Radiant intensity Not designed for reverse operation IF = 0.35 A, tp = 10 ms Ie 275 IF = 1 A, tp = 100 μs Ie IF = 1.5 A, tp = 100 μs Ie μA 350 425 mW/sr 700 925 1150 mW/sr 975 1350 1725 mW/sr IF = 5 A, tp = 100 μs Ie 2850 4100 5350 mW/sr IF = 1 A, tp = 100 μs φe - 1425 - mW IF = 1.5 A, tp = 100 μs φe - 2100 - mW IF = 1 A, tp = 200 μs TKφ - -0.15 - %/K ϕ - ± 40 - ° Peak wavelength IF = 1 A, tp = 300 μs λp - 860 - nm Centroid wavelength IF = 1 A, tp = 300 μs λcentroid - 850 - nm Spectral bandwidth IF = 1 A, tp = 300 μs Δλ - 30 - nm Radiant power Temperature coefficient of φ Angle of half intensity Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.25 - nm/K Rise time IF = 1 A tr - 10 - ns Fall time IF = 1 A tf - 15 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 10000 0.1 100 10 0.01 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2nd line VF, rel. - Relative Forward Voltage (%) 1000 1st line 2nd line 2nd line IF - Forward Current (A) tp = 100 μs 1 10000 115 IF = 1 A, tp = 200 μs 110 1000 105 1st line 2nd line 10 100 100 95 10 90 -60 -40 -20 0 20 40 60 80 100 120 140 VF - Forward Voltage (V) Tamb - Ambient Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.4, 08-Jul-2022 Document Number: 80294 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors Axis Title Axis0° Title 10° 20° 100 0.1 2nd line Ie, rel. - Relative Radiant Intensity 1000 1 1st line 2nd line Ie,rel - Relative Radiant Intensity (Ie / Ie(1.0 A)) tp = 100 μs 1000 40° 1.0 0.9 50° 0.8 100 60° 70° 0.7 80° 10 10 0.01 0.01 0.1 1 0.6 10 0.4 0.2 1st line Fig. 5 - Relative Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Axis Title Axis Title 6 105 1000 100 95 100 90 85 10 80 -60 -40 -20 0 20 40 60 10000 D=1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 5 4 1000 1st line 2nd line IF = 1 A, tp = 200 μs 2nd line IF max. - Max. Allowed Forward Current (A) 10000 1st line 2nd line 2nd line ϕe, rel. - Relative Radiant Power (%) 0 IF - Forward Current (A) 110 3 2 100 1 TSP = 25 °C, RthJSP,real = 9 K/W 10 0 10-6 80 100 120 140 10-5 10-4 10-3 10-2 10-1 1 101 Tamb - Ambient Temperature (°C) tp - Pulse Duration (s) Fig. 6 - Relative Radiant Power vs. Ambient Temperature Fig. 9 - Max. Allowed Forward Current vs. Pulse Duration Axis Title Axis Title 6 90 IF = 1.0 A, tp = 300 μs 80 70 1000 1st line 2nd line 60 50 40 100 30 20 10 10 0 700 750 800 850 900 950 2nd line IF max. - Max. Allowed Forward Current (A) 10000 10000 D=1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 5 4 1000 1st line 2nd line 100 2nd line Ie, rel. - Relative Radiant Intensity (%) φ - Angular Displacement 2nd line 10000 30° 10000 10 3 2 100 1 TSP = 85 °C, RthJSP,real = 9 K/W 10 0 10-6 10-5 10-4 10-3 10-2 10-1 1 101 λ - Wavelength (nm) tp - Pulse Duration (s) Fig. 7 - Relative Radiant Intensity vs. Wavelength Fig. 10 - Max. Allowed Forward Current vs. Pulse Duration Rev. 1.4, 08-Jul-2022 Document Number: 80294 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors TAPING DIMENSIONS in millimeters Reel design is representative for different types Unreel direction Ø Ø 33 Z 0 2 62 Ø E (E mp m pt ty l e y tra ad ile er r 2 40 00 0 m m m m m m in in . .) 13 A Ø 1.55 12 0.3 .4 18 .4 2 Label posted here A-A Ø 1.55 Z 8 4 Cathode A 5.5 Drawing-No.: 9.800-5151.01-4 Issue: 1; 09.07.2021 1.75 2.746 12 Notes • Empty component pockets sealed with top cover tape • 7 inch reel - 600 pieces per reel • The maximum number of consecutive missing lamps is two • In accordance with ANSI / EIA 481-1-A-1994 specifications Rev. 1.4, 08-Jul-2022 Document Number: 80294 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.4 2.445 1 Cathode marking Cathode Anode 2.7 3.4 BC A LM CX Die ESD die 0.5 0.35 Exposed copper 1 Not indicated tolerances ± 0.1 Technical drawings according to DIN specification Drawing-No.: 6.550-5367.01-4 Issue: 1; 09.07.2021 Notes • Tolerance is ± 0.10 mm (0.004") unless otherwise noted • Specifications are subject to change without notice Rev. 1.4, 08-Jul-2022 Document Number: 80294 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMA1085400 www.vishay.com Vishay Semiconductors RECOMMENDED FOOTPRINT 5.5 2.8 2.6 Cu area Solder resist Solder stencil Cathode marking Drawing-No.: 6.550-5366.9-3 Issue: 1; 09.07.2021 SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 245 °C FLOOR LIFE 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (°C) 0.9 2.8 Component location on pad 250 0.4 2.6 1 2.8 1 5.5 0.55 3.5 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, according to J-STD-020E Max. ramp up 3 °C/s 50 DRYING Max. 2 cycles allowed 10 0 0 50 100 150 200 250 300 Time (s) 23192 Fig. 11 - Lead (Pb)-free (Sn) Infrared Reflow Solder Profile According to J-STD-020E for Surface-Mount Components Rev. 1.4, 08-Jul-2022 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-033D or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 80294 7 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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