VSMB10940

VSMB10940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: Surface mount • Package form: Side view • Dimensions (L x W x H in mm): 3 x 2 x 1 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity:  = ± 75° • Low forward voltage DESCRIPTION • Package matches with detector VEMD10940F VSMB10940 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IR touch panel • High power emitter for low space applications • High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr), 20 mA  (deg) p (nm) tr (ns) 1 ± 75 940 15 VSMB10940 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB10940 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 65 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 130 Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 104 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C according to fig. 9, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 450 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.1, 02-May-13 Document Number: 84170 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB10940 Vishay Semiconductors 120 70 100 60 IF - Forward Current (mA) PV - Power Dissipation (mW) www.vishay.com 80 RthJA = 450 K/W 60 40 20 0 50 RthJA = 450 K/W 40 30 20 10 0 10 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (°C) 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 20 mA, tp = 20 ms VF 1.1 1.3 1.5 IF = 65 mA, tp = 20 ms VF 1.35 UNIT V V IF = 500 mA, tp = 100 μs VF 1.8 V IF = 1 mA TKVF - 1.5 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 20 mA, tp = 20 ms Ie IF = 65 mA, tp = 20 ms Ie 3.05 mW/sr IF = 500 mA, tp = 100 μs Ie 13 mW/sr IF = 100 mA, tp = 20 ms e 35 mW IF = 100 mA TKe - 0.47 %/K Angle of half intensity - horizontal h ± 77.5 deg Angle of half intensity - vertical v ± 72.5 deg nm Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power 10 21 0.5 1 μA pF 1.5 mW/sr Peak wavelength IF = 30 mA p 940 Spectral bandwidth IF = 30 mA  25 nm Temperature coefficient of p IF = 30 mA TKp 0.3 nm Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns Rev. 1.1, 02-May-13 Document Number: 84170 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB10940 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 0.1 tp = 100 µs 0.01 160 IF = 100 mA 140 120 100 80 60 0.001 0.5 0.7 0.9 1.1 1.3 1.5 1.9 1.7 - 60 - 40 - 20 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage 40 80 60 100 Φe rel - Relative Radiant Power (%) 100 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 90 - 40 - 20 0 20 40 60 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 90 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 20 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) tp = 100 µs 100 10 1 0.1 0.01 0.001 0.01 0.1 1 vertical horizontal 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (A) 1 80° 0.6 0.4 0.2 0 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.1, 02-May-13 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84170 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB10940 www.vishay.com REFLOW SOLDER PROFILE Vishay Semiconductors DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters Recommended Solder Pad Footprint 22701 Rev. 1.1, 02-May-13 Document Number: 84170 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB10940 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 22667 REEL DIMENSIONS in millimeters 22668 Rev. 1.1, 02-May-13 Document Number: 84170 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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