End of Life July-2021 - Alternative Device: VSMY3890X01
VSMF4720
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
FEATURES
• Package type: surface-mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
948553
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
DESCRIPTION
• Floor life: 168 h, MSL 3, acc. J-STD-020
VSMF4720 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD). A 19" chip provides outstanding low
forward voltage and radiant intensity even at 1 A pulse
current.
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (°)
λp (nm)
tr (ns)
16
± 60
870
15
VSMF4720
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMF4720-GS08
Tape and reel
MOQ: 7500 pcs, 1500 pcs/reel
PLCC-2
VSMF4720-GS18
Tape and reel
MOQ: 8000 pcs, 8000 pcs/reel
PLCC-2
Note
• MOQ: minimum order quantity
Rev. 1.3, 15-Jul-2020
Document Number: 81923
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY3890X01
VSMF4720
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
IF
100
mA
Peak forward current
Forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
160
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
According to Fig. 8, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
Soldering temperature
Thermal resistance junction-to-ambient
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
-
1.45
1.6
V
IF = 1 A, tp = 100 μs
VF
-
2.1
-
V
Temperature coefficient of VF
IF = 1 mA
TKVF
-
-1.8
-
mV/K
Reverse current
VR = 5 V
IR
-
-
10
μA
VR = 0 V, f = 1 MHz, E = 0
Cj
-
125
-
pF
IF = 100 mA, tp = 20 ms
Ie
10
16
30
mW/sr
Forward voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
TEST CONDITION
UNIT
IF = 1 A, tp = 100 μs
Ie
-
150
-
mW/sr
IF = 100 mA, tp = 20 ms
φe
-
50
-
mW
IF = 100 mA
TKφe
-
-0.35
-
%/K
ϕ
-
± 60
-
°
λp
-
870
-
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
Spectral bandwidth
IF = 100 mA
Δλ
-
40
-
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA
tr
-
15
-
ns
Fall time
IF = 100 mA
tf
-
15
-
ns
IDC = 70 mA, IAC = 30 mA pp
fc
-
24
-
MHz
d
-
0.67
-
mm
Cut-off frequency
Virtual source diameter
Rev. 1.3, 15-Jul-2020
Document Number: 81923
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY3890X01
VSMF4720
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe rel - Relative Radiant Power
Tamb < 50 °C
tp/T = 0.01
1000
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
0.75
0.5
0.25
IF = 100 mA
0
820
100
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
100
tp = 100 µs
tp/T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
- Angular Displacement
30°
Ie, rel - Relative Radiant Intensity
IF - Forward Current (mA)
920
870
λ - Wavelength (nm)
15821
tp - Pulse Duration (ms)
16031
1.0
80°
1
0
1
2
3
0.6
4
0.4
0.2
0
948013-4
VF - Forward Voltage (V)
18873_1
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Ie - Radiant Intensity (mW/sr)
1000
100
10
tp = 0.1 ms
1
0.1
21426
1
10
100
1000
IF - Forward Pulse Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.3, 15-Jul-2020
Document Number: 81923
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY3890X01
VSMF4720
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
0.9
1.75 ± 0.1
3.5 ± 0.2
0.8
technical drawings
according to DIN
specifications
C
A
2.2
2.8 ± 0.15
Pin identification
Drawing-No.: 6.541-5067.01-4
Issue: 7; 12.03.14
Ø 2.4
3 + 0.15
Mounting Pad Layout
Area covered
with solderresist
4
2.6 (2.8)
1.2
1.6 (1.9)
4
Dimensions: reflow and vapor phase (wave soldering)
DRYPACK
SOLDER PROFILE
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
10000
300
Max. 260 °C
255 °C
240 °C
217 °C
245 °C
FLOOR LIFE
1000
200
Max. 30 s
1st line
2nd line
2nd line
Temperature (°C)
250
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
DRYING
Max. ramp up 3 °C/s
50
10
0
0
50
100
150
Ti
( )
200
250
300
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
Preconditioning acc. to JEDEC®, Level 3
Rev. 1.3, 15-Jul-2020
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81923
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
End of Life July-2021 - Alternative Device: VSMY3890X01
VSMF4720
www.vishay.com
Vishay Semiconductors
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
10.0
9.0
120°
4.5
3.5
13.00
12.75
2.5
1.5
Adhesive tape
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
Blister tape
Component cavity
94 8670
63.5
60.5
14.4 max.
180
178
94 8665
Fig. 12 - Dimensions of Reel-GS08
Fig. 9 - Blister Tape
2.2
2.0
3.5
3.1
5.75
5.25
3.6
3.4
4.5
3.5
4.0
3.6
4.1
3.9
4.1
3.9
13.00
12.75
2.5
1.5
8.3
7.7
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
1.85
1.65
1.6
1.4
10.4
8.4
120°
0.25
2.05
1.95
94 8668
Fig. 10 - Tape Dimensions in mm for PLCC-2
62.5
60.0
321
329
14.4 max.
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
18857
Fig. 13 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Fig. 11 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartements.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartements and sealed with cover tape.
Rev. 1.3, 15-Jul-2020
Document Number: 81923
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000