VSML3710-GS08

VSML3710 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° 948553 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with IR emitter series VEMT3700 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering VSML3710 is an infrared, 940 nm emitting diode in GaAlAs, MQW (multi quantum well) technology with high radiant power, molded in a PLCC-2 package for surface mounting (SMD). • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IR emitter in photointerrupters, sensors, and reflective sensors • IR emitter in low space applications • Household appliance • Tactile keyboards PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 9.5 ± 60 940 15 VSML3710 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSML3710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSML3710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note • MOQ: minimum order quantity Rev. 1.6, 22-Oct-14 Document Number: 81300 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSML3710 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 160 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb -40 to +85 °C Storage temperature range Soldering temperature Thermal resistance junction/ambient Tstg -40 to +100 °C Acc. figure 11, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 0 100 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.6 3 V Temperature coefficient of VF IF = 1 mA TKVF -1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. mV/K 100 μA 20 mW/sr 60 4 9.5 pF IF = 1 A, tp = 100 μs Ie 70 IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe -0.6 %/K ϕ ± 60 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 30 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns Rev. 1.6, 22-Oct-14 Document Number: 81300 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSML3710 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 10 000 IF - Forward Current (mA) tp/T = 0.005 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 tp = 100 μs Ie - Radiant Intensity (mW/sr) Tamb < 60 °C 100 10 1 0.1 0.1 1 10 100 1 100 1000 IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 1000 Phie - Radiant Power (mW) 104 IF - Forward Current (mA) 10 tp - Pulse Length (ms) 95 9985 103 102 tP = 100 µs tP/T = 0.001 101 tp = 100 μs 100 10 1 0.1 100 0 1 2 3 1 4 10 1000 IF - Forward Current (mA) VF - Forward Voltage (V) 13600 100 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 Ie rel; Φe rel VF - Forward Voltage (V) IF = 1 mA 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 16848 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Ambient Temperature Rev. 1.6, 22-Oct-14 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81300 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSML3710 www.vishay.com Vishay Semiconductors 0° 10° IF = 30 mA 70 60 50 40 30 20 10 0 840 880 920 960 1000 0.9 50° 0.8 60° 70° 0.7 80° 1040 0.6 0.4 0.2 0 94 8013 λ - Wavelength (nm) 21445 40° 1.0 ϕ - Angular Displacement 90 80 20° 30° Ie, rel - Relative Radiant Sensitivity Φe rel - Relative Radiant Power (%) 100 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 0.9 1.75±0.1 3.5±0.2 0.8 Technical drawings according to DIN specifications A C 2.2 2.8±0.15 Pin identification Dimensions in mm Drawing-No.: 6.541-5067.01-4 Issue: 6; 23.09.13 Ø2.4 3 +0.15 Mounting Pad Layout 4 2.6 (2.8) 1.2 Area covered with solderresist 1.6 (1.9) 4 Dimensions: Reflow and vapor phase (wave soldering) Rev. 1.6, 22-Oct-14 Document Number: 81300 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSML3710 www.vishay.com Vishay Semiconductors SOLDER PROFILE Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 2.2 2.0 3.5 3.1 300 5.75 5.25 4.0 3.6 200 max. 30 s 3.6 3.4 150 8.3 7.7 max. 100 s max. 120 s 1.85 1.65 100 1.6 1.4 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 4.1 3.9 0.25 4.1 3.9 2.05 1.95 0 94 8668 0 50 19841 100 150 200 250 300 Fig. 13 - Tape Dimensions in mm for PLCC-2 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. FLOOR LIFE De-reeling direction Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. > 160 mm DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 94 8158 Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 10.0 9.0 120° Adhesive tape 4.5 3.5 2.5 1.5 Blister tape Component cavity Fig. 12 - Blister Tape 94 8670 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 63.5 60.5 180 178 14.4 max. 94 8665 Fig. 15 - Dimensions of Reel-GS08 Rev. 1.6, 22-Oct-14 Document Number: 81300 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSML3710 www.vishay.com Vishay Semiconductors 120° 4.5 3.5 2.5 1.5 COVER TAPE REMOVAL FORCE 10.4 8.4 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 13.00 12.75 62.5 60.0 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 Rev. 1.6, 22-Oct-14 Document Number: 81300 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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