VSMY12850

VSMY12850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 3.2 x 1.6 x 1.1 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 40° • Suitable for high pulse current operation DESCRIPTION • Floor life: 168 h, MSL 3, according to J-STD-020 As part of the SurfLightTM portfolio, the VSMY12850 is an infrared, 850 nm, top looking emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted PCB based package (with inner lens) for surface mounting (SMD). • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Emitter for proximity applications • IR touch panels • Photointerrupters • Optical switch PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 16 ± 40 850 10 VSMY12850 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY12850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER VR 5 V Forward current IF 70 mA Surge forward current TEST CONDITION tp = 100 μs Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 19-Mar-15 UNIT IFSM 1 A PV 140 mW Tj 100 °C Tamb -40 to +85 °C °C Tstg -40 to +100 acc. figure 10, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 390 K/W Document Number: 84234 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY12850 www.vishay.com Vishay Semiconductors 80 IF - Forward Current (mA) PV - Power Dissipation (mW) 140 120 100 80 60 RthJA = 390 K/W 40 20 0 70 60 50 40 30 RthJA = 390 K/W 20 10 0 0 20 40 60 80 100 0 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time TEST CONDITION IF = 20 mA, tp = 20 ms IF = 70 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 20 mA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 20 mA, tp = 20 ms IF = 70 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 70 mA, tp = 20 ms SYMBOL VF VF VF TKVF IR CJ Ie Ie Ie φe MIN. 1.1 TYP. MAX. 1.4 1.9 1.65 2.9 -1.7 not designed for reverse operation 5 2.3 4.7 16 130 40 UNIT V V V mV/K μA pF mW/sr mW/sr mW/sr mW IF = 20 mA TKφe -0.19 %/K IF = 20 mA IF = 20 mA IF = 20 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % ϕ λp Δλ TKλp tr tf 830 ± 40 850 35 0.25 10 10 deg nm nm nm/K ns ns 870 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) tp = 100 μs 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.0, 19-Mar-15 VF - Forward Voltage (V) IF - Forward Current (mA) 1000 1.80 1.75 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.20 IF = 20 mA -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Document Number: 84234 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY12850 Vishay Semiconductors 115 Ie, rel - Relative Radiant Intensity (%) IF = 20 mA tp = 20 ms 110 105 100 95 90 -60 -40 -20 0 20 40 60 80 100 IF = 20 mA 90 80 70 60 50 40 30 20 10 0 100 700 750 800 850 900 1000 λ - Wavelength (nm) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity vs. Wavelength 0° 10° Ie, rel - Relative Radiant Intensity 1000 Ie - Radiant Intensity (mW/sr) 950 tp = 100 μs 100 10 1 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° ϕ - Angular Displacement VF, rel - Relative Forward Voltage (%) www.vishay.com 0.1 1 10 100 1000 0.4 0.2 0 λ - Wavelength (nm) IF - Forward Current (mA) Fig. 6 - Radiant Intensity vs. Forward Current Ie, rel - Relative Radiant Intensity (%) 0.6 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 110 IF = 20 mA tp = 20 ms 105 100 95 90 85 80 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Rev. 1.0, 19-Mar-15 Document Number: 84234 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY12850 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, according to J-STD-020. DRYING Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMY12850 Recommended Solder Pad Rev. 1.0, 19-Mar-15 Document Number: 84234 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY12850 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY12850 Rev. 1.0, 19-Mar-15 Document Number: 84234 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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