VSMY14940
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
FEATURES
• Package type: surface-mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.0 x 2.51 x 1.2
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 9°
• Suitable for high pulse current operation
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY14940 is an
infrared, 940 nm, side looking emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensities, high optical power and high speed,
molded in clear, untinted PCB based package (with lens) for
surface mounting (SMD).
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter for remote control (38 kHz)
• Learning remote control
• Photointerrupters
• Optical switch
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
90
±9
940
5
VSMY14940
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY14940
Tape and reel
MOQ: 1500 pcs, 1500 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
VR
5
V
Forward current
IF
70
mA
Surge forward current
TEST CONDITION
tp = 100 μs
Power dissipation
Junction temperature
UNIT
IFSM
0.7
A
PV
119
mW
°C
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-55 to +100
°C
According to Fig. 10, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
390
K/W
Soldering temperature
Thermal resistance junction-to-ambient
Rev. 1.6, 22-Sep-17
Document Number: 84209
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY14940
Vishay Semiconductors
140
80
120
70
IF - Forward Current (mA)
PV - Power Dissipation (mW)
www.vishay.com
100
80
60
RthJA = 390 K/W
40
20
60
50
40
30
RthJA = 390 K/W
20
10
0
0
0
10
20
30
40
50
60
70
80
0
90 100
10
Tamb - Ambient Temperature (°C)
20
30
40
50
60
70
80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 20 mA, tp = 20 ms
VF
1.1
1.3
1.5
V
IF = 70 mA, tp = 20 ms
VF
-
1.5
-
V
IF = 0.7 A, tp = 100 μs
VF
-
3.0
-
V
IF = 20 mA
TKVF
-
-0.9
-
mV/K
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
-
30
-
pF
IF = 20 mA, tp = 20 ms
Ie
15
25
-
mW/sr
IF = 70 mA, tp = 20 ms
Ie
-
90
-
mW/sr
IF = 0.7 A, tp = 100 μs
Ie
-
560
-
mW/sr
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
-
0.5
-
μA
IF = 70 mA, tp = 20 ms
φe
-
40
-
mW
IF = 70 mA
TKφe
-
-0.21
-
%/K
ϕ
-
±9
-
deg
Peak wavelength
IF = 70 mA
λp
920
940
960
nm
Spectral bandwidth
IF = 70 mA
Δλ
-
55
-
nm
Temperature coefficient of λp
IF = 70 mA
TKλp
-
0.28
-
nm/K
Rise time
IF = 70 mA, 10 % to 90 %
tr
-
5
-
ns
Fall time
IF = 70 mA, 10 % to 90 %
tf
-
6
-
ns
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Reverse light current
Radiant power
Temperature coefficient of
radiant power
IR
Angle of half intensity
Rev. 1.6, 22-Sep-17
Not designed for reverse operation
UNIT
nA
Document Number: 84209
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY14940
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ie,rel - Relative Radiant Intensity (%)
IF - Forward Current (mA)
1000
tp = 100 μs
100
10
1
1.0
1.4
1.8
2.2
2.6
1000
tp = 100 μs
100
10
1
3.0
1
VF - Forward Voltage (V)
IF = 70 mA
tP = 20 ms
1.45
1.40
1.35
1.30
20
40
60
80
120
IF = 70 mA
tp = 20 ms
110
100
90
80
100
-60 -40 -20
Tamb - Ambient Temperature (°C)
IF = 70 mA
tp = 20 ms
105
100
95
90
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.6, 22-Sep-17
20
40
60
80
100
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity (%)
VF, rel - Relative Forward Voltage (%)
110
0
0
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
-60 -40 -20
1000
Fig. 6 - Relative Radiant Intensity vs. Forward Current
Ie, rel - Relative Radiant Intensity (%)
VF - Forward Voltage (V)
1.50
0
100
IF - Forward Current (mA)
Fig. 3 - Forward Current vs. Forward Voltage
-60 -40 -20
10
100
IF = 70 mA
80
60
40
20
0
800
850
900
950
1000
1050
λ - Wavelength (nm)
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Document Number: 84209
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY14940
www.vishay.com
10°
DRYPACK
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.4
0.6
0.2
ϕ - Angular Displacement
Ie, rel - Relative Radiant Intensity
0°
Vishay Semiconductors
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
SOLDER PROFILE
Temperature
10 s max.
217 °C
200 °C
255 °C to 260 °C
3 °C/s max.
6 °C/s max.
150 °C
3 °C/s max.
60 s to 120 s
60 s max.
Time
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.6, 22-Sep-17
Document Number: 84209
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY14940
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY14940
Molding
body (lens)
1.20
1.00
1.20
Cathode
mask
1.60
Soldering
terminal
3.00
+
1.00
-
Polarity
1.90
2.51
1.10
Not indicated tolerances ± 0.1 mm
Recommended Solder Pad
1.40
1.80
0.90
Rev. 1.6, 22-Sep-17
0.90
Document Number: 84209
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY14940
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY14940
4.00 ± 0.10
2.00 ± 0.05
Ø 1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
8.00
3.50 ± 0.05
+ 0.30
- 0.10
Cathode
mask
Ø 1.00
0.25 ± 0.02
1.8
+ 0.25
R0.50
3.30
Anode
mask
1.40 ± 0.10
Rev. 1.6, 22-Sep-17
Document Number: 84209
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 01-Jan-2019
1
Document Number: 91000