VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• Enhanced operating
-40 °C to +105 °C
temperature
range:
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
21531
• High speed
• Angle of half intensity: ϕ = ± 60°
• Suitable for high pulse current operation
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY1850ITX01 is
an infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with high radiant intensity, high
optical power and high speed, molded in clear, untinted
0805 plastic package for surface mounting (SMD).
• 0805 standard surface-mountable package
• Floor life: 72 h, MSL 4, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR flash
• IR illumination
• Emitter for automotive applications (e.g. rain sensor)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
10
± 60
850
10
VSMY1850ITX01
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY1850ITX01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
0805
Note
• MOQ: minimum order quantity
Rev. 1.2, 30-Jun-16
Document Number: 84272
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
IF
100
mA
Peak forward current
Forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
190
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
100
°C
-40 to +105
°C
Tstg
-40 to +110
°C
According to Fig. 7, J-STD-020
Tsd
260
°C
JESD 51
RthJA
270
K/W
Thermal resistance junction / ambient
120
200
180
IF - Forward Current (mA)
PV - Power Dissipation (mW)
Tj
Tamb
160
140
120
100
80
RthJA = 270 K/W
60
40
20
0
100
80
60
RthJA = 270 K/W
40
20
0
0
15
30
45
60
75
90
0
105 120
15
Tamb - Ambient Temperature (°C)
30
45
60
75
90
105 120
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
-
1.65
1.9
V
IF = 1 A, tp = 100 μs
VF
-
2.9
-
V
IF = 1 mA
TKVF
-
-1.4
-
mV/K
IF = 10 mA
TKVF
-
-1.18
-
mV/K
Reverse current
Junction capacitance
IR
VR = 0 V, f = 1 MHz,
E = 0 mW/cm2
Not designed for reverse operation
125
v
pF
5
10
15
mW/sr
-
85
-
mW/sr
φe
-
50
-
mW
IF = 100 mA
TKφe
-
-0.35
-
%/K
ϕ
-
± 60
-
deg
Peak wavelength
IF = 100 mA
λp
840
850
870
nm
Spectral bandwidth
IF = 30 mA
Δλ
-
30
-
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
-
10
-
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
-
10
-
ns
d
-
0.5
-
mm
Radiant intensity
Radiant power
Temperature coefficient of
radiant power
CJ
-
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 μs
Ie
IF = 100 mA, tp = 20 ms
μA
Angle of half intensity
Virtual source diameter
Rev. 1.2, 30-Jun-16
Document Number: 84272
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Φe, rel - Relative Radiant Power
1
0.1
0.01
IF = 30 mA
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
VF - Forward Voltage (V)
22097
0
650
3.5
750
Fig. 3 - Forward Current vs. Forward Voltage
0°
10°
20°
30°
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
950
Fig. 5 - Relative Radiant Power vs. Wavelength
1000
100
tp = 100 µs
10
1
0.1
0.001
0.01
0.1
REFLOW SOLDER PROFILE
max. 260 °C
245 °C
255 °C
240 °C
217 °C
max. 100 s
max. 120 s
max. ramp down 6 °C/s
80°
0.6
0.4
0.2
0
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
0
100
150
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
max. ramp up 3 °C/s
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.2, 30-Jun-16
70°
0.7
Moisture sensitivity: level 4
100
19841
60°
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
max. 30 s
150
50
0.8
FLOOR LIFE
200
0
50°
DRYPACK
300
50
0.9
948013-1
Fig. 4 - Radiant Intensity vs. Forward Current
250
40°
1.0
1
IF - Forward Current (A)
22110
Temperature (°C)
850
λ - Wavelength (nm)
21776-1
ϕ - Angular Displacement
IF - Forward Current (A)
tp = 100 µs
1
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84272
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Bottom View
Cathode
Anode
1
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Side View
0.35
0.85
2
0.6
0.6
Recommended solder pad
Footprint
Top View
1
0.82
0.625
1.2
1.25
1
0.6
Drawing-No.: 6.541-5083.01-4
Issue: 1; 29.03.10
22111
Rev. 1.2, 30-Jun-16
Document Number: 84272
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
4
Ø 1.55 ± 0.05
0.2 ± 0.05
2 ± 0.05
8
2.24
3.5 ± 0.05
1.75
Anode
0.94
Cathode
1.45
4
Ø 1.1 + 0.1
Not indicated tolerances ±0.1
Reel off direction
Drawing-No.: 9.700-5352.01-4
Issue: 1; 13.04.10
technical drawings
according to DIN
specifications
22112
REEL DIMENSIONS in millimeters
8.4 +2.5
Ø 177.8 max.
Ø 55 min.
8.4 +0.15
Z
Form of the leave open
of the wheel is supplier specific.
14.4 max.
Ø 20.2 min.
1.5 min.
Ø 13 - 0.2
+ 0.5
Z 2:1
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
Rev. 1.2, 30-Jun-16
technical drawings
according to DIN
specifications
Document Number: 84272
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000