VSMY2850RG

VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG VSMY2850G FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • Very high radiant intensity DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Angle of half intensity: ϕ = ± 10° • Suitable for high pulse current operation • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2500X01 series • Floor life: 4 weeks, MSL 2a, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) VSMY2850RG 125 ± 10 850 10 VSMY2850G 125 ± 10 850 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2850RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2850G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.6, 31-Jul-2018 Document Number: 83398 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 190 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C According to Fig. 10, J-STD-020 Tsd 260 °C EIA / JESD51 RthJA 250 K/W Soldering temperature Thermal resistance junction-to-ambient 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 21890 10 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 10 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21891 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF - 1.6 1.9 V IF = 1 A, tp = 100 μs VF - 2.8 - V IF = 100 mA TKVF - -1.5 - mV/K Reverse current IR Not designed for reverse operation UNIT μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 50 - pF IF = 100 mA, tp = 20 ms Ie 70 125 210 mW/sr IF = 1 A, tp = 100 μs Ie - 1000 - mW/sr IF = 100 mA, tp = 20 ms φe - 55 - mW IF = 100 mA TKφe - -0.12 - %/K ϕ - ± 10 - deg Peak wavelength IF = 100 mA λp 840 850 870 nm Spectral bandwidth IF = 30 mA Δλ - 30 - nm Temperature coefficient of λp IF = 30 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 10 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 10 - ns Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Rev. 1.6, 31-Jul-2018 Document Number: 83398 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 1000 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 IF = 100 mA, tp = 20 ms 110 105 100 95 90 85 -60 -40 -20 2.6 VF - Forward Voltage (V) IF = 100 mA, tp = 20 ms 105 100 95 90 20 40 60 80 100 100 IF = 100 mA 80 60 40 20 0 750 800 850 900 950 Fig. 7 - Relative Radiant Intensity vs. Wavelength 0° 10 tp = 100 μs Ie, rel - Relative Radiant Intensity Ie,rel - Relative Radiant Intensity (Ie / Ie(100 mA)) 80 λ - Wavelength (nm) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 1 0.1 100 60 100 Tamb - Ambient Temperature (°C) 10 40 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) VF, rel - Relative Forward Voltage (%) 110 0 20 Tamb - Ambient Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage -60 -40 -20 0 1000 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement IF - Forward Current (mA) tp = 100 μs 115 0 IF - Forward Current (mA) Fig. 5 - Relative Radiant Intensity vs. Forward Current Rev. 1.6, 31-Jul-2018 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 83398 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 2nd line Temperature (°C) 250 FLOOR LIFE 245 °C Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 1000 200 1st line 2nd line Max. 30 s 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 10 0 0 50 100 150 200 250 300 Time (s) 19841-1 Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, according to J-STD-020. DRYING Max. ramp up 3 °C/s 50 Floor life: 4 weeks In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 9 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.6, 31-Jul-2018 Document Number: 83398 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors PACKAGE DIMENISONS in millimeters: VSMY2850RG Ø 1.8 ± 0.1 0.3 Z 1.6 0.19 2.77 ± 0.2 0.05 ± 0.1 0.4 2.2 2.2 5.8 ± 0.2 Z 20:1 1.1 ± 0.1 Exposed copper 0.254 0.5 2.3 ± 0.2 0.4 2.3 ± 0.2 Pin ID Anode 1.7 Cathode 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.03-4 Issue: 1; 18.03.10 22100 Rev. 1.6, 31-Jul-2018 Document Number: 83398 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2850G Ø 1.8 2.2 0.19 1.6 X 0.05 2.77 ± 0.2 0.3 0.4 2.2 4.2 ± 0.2 Exposed copper X 20:1 0.6 Anode 0.75 0.254 0.5 2.3 ± 0.2 0.4 2.3 ± 0.2 Pin ID Cathode technical drawings according to DIN specifications Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.03-4 Issue: 1; 18.03.10 22099 Rev. 1.6, 31-Jul-2018 Document Number: 83398 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2850RG Unreel direction X 2. Ø 62 ± 0.5 Reel Ø 13 ± 0.5 Ø 330 ± 1 0.5 5± Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Device Lead I Lead II Collector Emitter Cathode Anode Anode Cathode Ø 1.55 ± 0.05 I VEMT2000 VEMT2500 X 2:1 4 ± 0.1 2 ± 0.05 VEMD2000 5.5 ± 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 ± 0.1 II 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.6, 31-Jul-2018 Document Number: 83398 7 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2850G Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Ø 1.55 ± 0.05 Device Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 X 2:1 4 ± 0.1 2 ± 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 ± 0.1 II 4 ± 0.1 5.5 ± 0.05 VSMG2020 12 ± 0.3 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.6, 31-Jul-2018 Document Number: 83398 8 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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