VSMY2853G

VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2853RG VSMY2853G FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • Peak wavelength: λp = 850 nm • High reliability • High radiant power 22689 • Very high radiant intensity • Angle of half intensity: ϕ = ± 28° DESCRIPTION SurfLightTM As part of the portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Suitable for high pulse current operation • Terminal configurations: gullwing or reverse gullwing • Package matches with detector VEMD2503X01 series • Floor life: 4 weeks, MSL 2a, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR illumination PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY2853RG 50 ± 28 850 10 VSMY2853G 50 ± 28 850 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2853RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2853G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.3, 31-Jul-2018 Document Number: 83480 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 190 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C According to Fig. 7, J-STD-020 Tsd 260 °C EIA / JESD51 RthJA 250 K/W Soldering temperature Thermal resistance junction-to-ambient 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 21890 10 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 10 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21891 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.6 1.9 V IF = 1 A, tp = 100 μs VF - 2.8 - V IF = 100 mA TKVF - -1.5 - mV/K VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 50 - pF IF = 100 mA, tp = 20 ms Ie 27 50 75 mW/sr Reverse current Junction capacitance Radiant intensity IR Not designed for reverse operation μA IF = 1 A, tp = 100 μs Ie - 350 - mW/sr IF = 100 mA, tp = 20 ms φe - 55 - mW IF = 100 mA TKφe - -0.12 - %/K ϕ - ± 28 - deg Peak wavelength IF = 100 mA λp 840 850 870 nm Spectral bandwidth IF = 30 mA Δλ - 30 - nm Temperature coefficient of λp IF = 30 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 10 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 10 - ns Radiant power Temperature coefficient of radiant power Angle of half intensity Rev. 1.3, 31-Jul-2018 Document Number: 83480 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 1000 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 100 2.6 IF = 100 mA 80 60 40 20 0 750 800 850 Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Relative Radiant Power vs. Wavelength 0° 1 100 40° 1.0 0.9 50° 0.8 60° 70° 0.7 1000 80° 0.6 IF - Forward Current (mA) Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 245 °C FLOOR LIFE 1000 200 1st line 2nd line Max. 30 s 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % DRYING 10 0 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.3, 31-Jul-2018 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Moisture sensitivity level 2a, according to J-STD-020. Max. ramp up 3 °C/s 19841-1 0 DRYPACK Axis Title 100 0.2 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement SOLDER PROFILE 50 0.4 22688 Fig. 4 - Relative Radiant Intensity vs. Forward Current 2nd line Temperature (°C) 20° 0.1 10 0 10° 30° tp = 100 μs Ie rel - Relative Radiant Intensity Ie,rel - Relative Radiant Intensity (Ie / Ie(100 mA)) 10 50 950 λ - Wavelength (nm) VF - Forward Voltage (V) 250 900 ϕ - Angular Displacement IF - Forward Current (mA) tp = 100 μs In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 83480 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2853RG Rev. 1.3, 31-Jul-2018 Document Number: 83480 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2853G Rev. 1.3, 31-Jul-2018 Document Number: 83480 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2853RG Rev. 1.3, 31-Jul-2018 Document Number: 83480 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2853G Rev. 1.3, 31-Jul-2018 Document Number: 83480 7 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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