VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
VSMY2940RG
VSMY2940G
FEATURES
• Package type: surface-mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY2940 series
are infrared, 940 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• Angle of half intensity: ϕ = ± 10°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λP (nm)
tr (ns)
VSMY2940RG
145
± 10
940
10
VSMY2940G
145
± 10
940
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY2940RG
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMY2940G
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
Rev. 1.1, 08-Dec-17
Document Number: 84221
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
IF
100
mA
Peak forward current
Forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
180
mW
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
Tstg
-40 to +100
°C
According to Fig. 10, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
100
180
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
200
RthJA = 250 K/W
140
120
100
80
60
40
80
RthJA = 250 K/W
60
40
20
20
0
0
0
20
40
60
80
0
100
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
-
1.4
1.8
V
IF = 1 A, tp = 100 μs
VF
-
2.5
-
V
IF = 100 mA
TKVF
-
-0.7
-
mV/K
Reverse current
Junction capacitance
Radiant intensity
IR
Not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
-
55
-
pF
IF = 100 mA, tp = 20 ms
Ie
75
145
215
mW/sr
IF = 1 A, tp = 100 μs
Ie
-
1000
-
mW/sr
IF = 100 mA, tp = 20 ms
φe
-
55
-
mW
IF = 100 mA
TKφe
-
-0.2
-
%/K
ϕ
-
± 10
-
deg
Peak wavelength
IF = 100 mA
λp
920
940
960
nm
Spectral bandwidth
IF = 100 mA
Δλ
-
50
-
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA, 10 % to 90 %
tr
-
10
-
ns
Fall time
IF = 100 mA, 10 % to 90 %
tf
-
10
-
ns
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Rev. 1.1, 08-Dec-17
Document Number: 84221
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ie, rel - Relative Radiant Intensity (%)
1000
100
10
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
115
IF = 100 mA
tp = 20 ms
110
105
100
95
90
85
2.6
-60 -40 -20
VF - Forward Voltage (V)
20
60
80
100
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Ie, rel - Relative Radiant Intensity
110
IF = 100 mA
tp = 20 ms
105
100
95
90
100%
IF = 100 mA
80%
60%
40%
20%
0%
-60 -40 -20
0
20
40
60
80
100
800
850
900
950
1000
1050
λ - Wavelength (nm)
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Wavelength
0°
Ie, rel - Relative Radiant Intensity
10
Ie,rel - Relative Radiant Intensity
(Ie / Ie(100 mA))
40
Tamb - Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
VF, rel - Relative Forward Voltage (%)
0
tp = 100 μs
1
0.1
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
ϕ - Angular Displacement
IF - Forward Current (mA)
tp = 100 μs
0.01
1
10
100
1000
0.6
0.4
0.2
0
IF - Forward Current (mA)
Fig. 5 - Relative Radiant Intensity vs. Forward Current
Rev. 1.1, 08-Dec-17
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 84221
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Axis Title
10000
300
Max. 260 °C
255 °C
240 °C
217 °C
2nd line
Temperature (°C)
250
245 °C
FLOOR LIFE
1000
200
1st line
2nd line
Max. 30 s
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, according to J-STD-020.
Max. ramp up 3 °C/s
50
DRYING
10
0
0
50
100
150
200
250
300
Time (s)
19841-1
Fig. 9 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.1, 08-Dec-17
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84221
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2940RG
Ø 1.8 ± 0.1
0.3
1.6
Z
0.19
2.77 ± 0.2
0.05 ± 0.1
0.4
2.2
2.2
5.8 ± 0.2
exposed copper
1.1 ± 0.1
Z 20:1
0.254
2.3 ± 0.2
0.4
0.5
2.3 ± 0.2
0.75
anode
pin ID
1.7
cathode
solder pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.03-4
Issue: 2; 19.09.14
Rev. 1.1, 08-Dec-17
Document Number: 84221
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2940G
Ø 1.8
0.19
1.6
X
0.05
2.77 ± 0.2
0.3
0.4
2.2
2.2
4.2 ± 0.2
X 20:1
exposed copper
0.6
0.75
anode
pin ID
solder pad proposal
acc. IPC 7351
0.254
2.3 ± 0.2
0.4
0.5
2.3 ± 0.2
cathode
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.03-4
Issue: 2; 19.09.14
Rev. 1.1, 08-Dec-17
Document Number: 84221
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2940RG
Reel
X
unreel direction
Ø
13
±
0.5
Ø 330 ± 1
.5
±0
Ø 62 ± 0.5
2.5
tape position
coming out from reel
6000 pcs/reel
technical drawings
according to DIN
specifications
label posted here
12.4 ± 1.5
Leader and trailer tape
empty (160 mm min.)
parts mounted
direction of pulling out
Ø 1.55 ± 0.05
I
3.05 ± 0.1
4 ± 0.1
X 2:1
4 ± 0.1
2 ± 0.05
12 ± 0.3
Lead I
Lead II
Device
VEMT2000
Collector Emitter
VEMT2500
VEMD2000
VEMD2500
Cathode Anode
VSMB2000
VSMG2000
VSMF2890RG
VSMY2850RG
Anode Cathode
VSMY2940RG
5.5 ± 0.05
Terminal position in tape
1.75 ± 0.1
empty (400 mm min.)
II
Drawing-No.: 9.800-5100.01-4
Issue: 4; 19.09.14
Rev. 1.1, 08-Dec-17
Document Number: 84221
7
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2940G
Reel
X
unreel direction
Ø
13
±
0.5
Ø 330 ± 1
.5
±0
Ø 62 ± 0.5
2.5
tape position
coming out from reel
6000 pcs/reel
technical drawings
according to DIN
specifications
label posted here
12.4 ± 1.5
Leader and trailer tape
empty (160 mm min.)
parts mounted
direction of pulling out
Ø 1.55 ± 0.05
Lead I
Lead II
Cathode
Anode
Collector
Emitter
Anode
Cathode
I
3.05 ± 0.1
4 ± 0.1
X 2:1
4 ± 0.1
2 ± 0.05
12 ± 0.3
Device
VSMB2020
VSMG2020
VEMD2020
VEMD2520
VSMF2890G
VEMT2020
VEMT2520
VSMY2850G
VSMY2940G
5.5 ± 0.05
Terminal position in tape
1.75 ± 0.1
empty (400 mm min.)
II
Drawing-No.: 9.800-5091.01-4
Issue: 5; 19.09.14
Rev. 1.1, 08-Dec-17
Document Number: 84221
8
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000