VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
VSMY2943RG
VSMY2943G
FEATURES
• Package type: surface-mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
DESCRIPTION
SurfLightTM
As part of the
portfolio, the VSMY2943 series
are infrared, 940 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR illumination
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
VSMY2943RG
50
± 28
940
10
VSMY2943G
50
± 28
940
10
tr (ns)
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY2943RG
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMY2943G
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
Rev. 1.1, 08-Dec-17
Document Number: 84252
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
IF
100
mA
Peak forward current
Forward current
tp/T = 0.5, tp = 100 μs
IFM
180
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
180
mW
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
Tstg
-40 to +100
°C
According to Fig. 7, J-STD-020
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
100
180
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
200
RthJA = 250 K/W
140
120
100
80
60
40
80
RthJA = 250 K/W
60
40
20
20
0
0
0
20
40
60
80
0
100
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
-
1.4
1.8
V
IF = 1 A, tp = 100 μs
VF
-
2.5
-
V
IF = 100 mA
TKVF
-
-0.7
-
mV/K
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
IR
VR = 0 V, f = 1 MHz, E = 0
mW/cm2
IF = 100 mA, tp = 20 ms
Not designed for reverse operation
μA
CJ
-
55
-
pF
Ie
27
50
75
mW/sr
IF = 1 A, tp = 100 μs
Ie
-
350
-
mW/sr
IF = 100 mA, tp = 20 ms
φe
-
55
-
mW
IF = 100 mA
TKφe
-
-0.2
-
%/K
ϕ
-
± 28
-
deg
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
920
940
960
Spectral bandwidth
IF = 30 mA
Δλ
-
50
-
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
-
10
-
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
-
10
-
ns
Rev. 1.1, 08-Dec-17
Document Number: 84252
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ie, rel - Relative Radiant Intensity
1000
100
10
100%
IF = 100 mA
80%
60%
40%
20%
1
0%
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
800
850
900
1000
1050
λ - Wavelength (nm)
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Radiant Power vs. Wavelength
0°
10
10°
20°
30°
tp = 100 μs
Ie rel - Relative Radiant Intensity
Ie,rel - Relative Radiant Intensity
(Ie / Ie(100 mA))
950
1
0.1
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
tp = 100 μs
80°
0.01
1
10
100
1000
0.6
Fig. 4 - Relative Radiant Intensity vs. Forward Current
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Axis Title
10000
Max. 260 °C
255 °C
240 °C
217 °C
2nd line
Temperature (°C)
FLOOR LIFE
245 °C
1000
200
1st line
2nd line
Max. 30 s
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
10
0
0
50
100
150
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
Rev. 1.1, 08-Dec-17
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, according to J-STD-020.
DRYING
Max. ramp up 3 °C/s
19841-1
0
DRYPACK
300
50
0.2
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
250
0.4
22688
IF - Forward Current (mA)
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84252
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2943RG
0.4
0.3
0.05 ± 0.1
Ø 1.8
1.6
2.55
Z
2.2
2.22
5.8
0.8
Exposed copper
Z (20 : 1)
2.3
0.4
0.5
2.3
Anode
Cathode
0.75
Pin ID
1.7
Solder pad proposal
acc. IPC 7351
Technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.2
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5409.03-4
Issue: 3; 02.10.15
Rev. 1.1, 08-Dec-17
Document Number: 84252
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2943G
0.4
0.3
Ø 1.8
0.05 ± 0.1
1.6
2.55
X
2.22
2.2
4.2
Exposed copper
X (20 : 1)
2.3
0.4
0.5
2.3
0.6
Anode
Cathode
0.75
Pin ID
Technical drawings
according to DIN
specifications
Solder pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.2
2.45
5.15
Drawing-No.: 6.544-5408.03-4
Issue: 3; 02.10.15
Rev. 1.1, 08-Dec-17
Document Number: 84252
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2943RG
X
Reel
Unreel direction
±0
Ø 62 ± 0.5
2.5
Ø
13
±
0.5
Ø 330 ± 1
.5
Tape position
coming out from reel
6000 pcs / reel
Label posted here
Technical drawings
according to DIN
specifications
12.4 ± 1.5
Leader and trailer tape
Empty (160 mm min.)
Parts mounted
Direction of pulling out
4 ± 0.1
Ø 1.55 ± 0.05
Terminal position in tape
Device
I
Lead I
Lead II
Cathode
Anode
Collector
Emitter
Anode
Cathode
2 ± 0.05
X (2 : 1)
1.75 ± 0.1
Empty (400 mm min.)
+ 0.3
- 0.1
VSMB2943RGX01
VSMF2893RGX01
VSMY2853RG
VSMY2943RG
VSMY294310RG
3.05 ± 0.1
4 ± 0.1
5.5 ± 0.05
VEMT2x03X01
12
VEMD2x03X01
II
Drawing-No.: 9.800-5100.02-4
Issue: 3; 02.10.15
Rev. 1.1, 08-Dec-17
Document Number: 84252
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943RG, VSMY2943G
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2943G
X
Reel
Unreel direction
±0
Ø 62 ± 0.5
2.5
Ø
13
±
0.5
Ø 330 ± 1
.5
Tape position
coming out from reel
6000 pcs / reel
Technical drawings
according to DIN
specifications
Label posted here
12.4 ± 1.5
Leader and trailer tape
Empty (160 mm min.)
Parts mounted
Direction of pulling out
Terminal position in tape
Device
Ø 1.55 ± 0.05
Lead I
Lead II
Cathode
Anode
Collector
Emitter
Anode
Cathode
I
4 ± 0.1
2 ± 0.05
X (2 : 1)
1.75 ± 0.1
Empty (400 mm min.)
VSMB2943GX01
VSMF2893GX01
12
VEMT2x23X01
+ 0.3
- 0.1
VEMD2x23X01
VSMY2943G
VSMY294310G
3.05 ± 0.1
Drawing-No.: 9.800-5091.21-4
Issue: 3; 02.10.15
Rev. 1.1, 08-Dec-17
4 ± 0.1
5.5 ± 0.05
VSMY2853G
II
Document Number: 84252
7
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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Revision: 01-Jan-2022
1
Document Number: 91000
