VSMY2943SLX01

VSMY2943SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • Peak wavelength: p = 940 nm • High reliability • High radiant power • Very high radiant intensity DESCRIPTION • Angle of half intensity:  = ± 28° SurfLightTM As part of the portfolio, the VSMY2943SLX01 is an infrared, 940 nm, side looking emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Suitable for high pulse current operation • Package matches with detector VEMD2xx3SLX01 and VEMT2xx3SLX01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS        • Automotive sensor • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination • Remote control PRODUCT SUMMARY COMPONENT Ie (mW/sr)  (deg) p (nm) tr (ns) 50 ± 28 940 10 VSMY2943SLX01 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2943SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity Rev. 1.0, 22-Nov-17 Document Number: 84890 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SLX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp  100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb -40 to +85 °C Storage temperature range Soldering temperature Thermal resistance junction/ambient Tstg -40 to +100 °C Acc. figure 7, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W 100 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 RthJA = 250 K/W 140 120 100 80 60 40 20 0 RthJA = 250 K/W 80 60 40 20 0 0 20 40 60 80 0 100 20 Tamb - Ambient Temperature (°C) 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.4 1.8 V IF = 1 A, tp = 100 μs VF - 2.5 - V IF = 100 mA TKVF - -0.7 - mV/K Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms not designed for reverse operation μA CJ - 55 - pF Ie 27 50 75 mW/sr IF = 1 A, tp = 100 μs Ie - 350 - mW/sr IF = 100 mA, tp = 20 ms e - 55 - mW IF = 100 mA TKe - -0.2 - %/K  - ± 28 - deg nm Angle of half intensity Peak wavelength IF = 100 mA p 920 940 960 Spectral bandwidth IF = 100 mA  - 50 - nm Temperature coefficient of p IF = 100 mA TKp - 0.25 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 10 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 10 - ns Rev. 1.0, 22-Nov-17 Document Number: 84890 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 1000 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 100 IF = 100 mA 80 60 40 20 0 2.6 800 850 900 1000 1050 λ - Wavelength (nm) VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Relative Radiant Intensity vs. Wavelength 0° 10 10° 20° 30° tp = 100 μs Ie rel - Relative Radiant Intensity Ie, rel - Relative Radiant Intensity (Ie / Ie(100 mA)) 950 1 0.1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) tp = 100 μs 80° 0.01 1 10 100 1000 0.6 0.4 0.2 0 22688 IF - Forward Current (mA) Fig. 4 - Relative Radiant Intensity vs. Forward Current Fig. 6 - Relative Radiant Intensity vs. Angular Displacement SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C FLOOR LIFE 245 °C 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (°C) 250 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. Max. ramp up 3 °C/s 50 DRYING 10 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.0, 22-Nov-17 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84890 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SLX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 1.8 1.6 0.3 2.55 0.85 0.4 2.2 2.22 3.8 2.3 0.9 2.3 0.05 ± 0.1 Cathode Technical drawings according to DIN specifications Not indicated tolerances ± 0.2 0.5 Anode Solder pad proposal acc. IPC 7351 Exceeding cut residues or cut ins allowed within the tolerance of the leads 0.9 1.2 0.9 4.2 center of pick and place area Drawing-No.: 6.544-5410.03-4 Issue: 3; 02.10.15 Rev. 1.0, 22-Nov-17 Document Number: 84890 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SLX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters X Reel Unreel direction ±0 Ø 62 ± 0.5 2 .5 Ø 13 ± 0.5 Ø 330 ± 1 .5 Tape position coming out from reel 6000 pcs / reel Technical drawings according to DIN specifications Label posted here 12.4 ± 1.5 Leader and trailer tape Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) Device Lead I 1.75 ± 0.1 Terminal position in tape Lead II VSMB2943SLX01 4 ± 0.1 2 ± 0.05 Ø 1.55 ± 0.05 X (2 : 1) I VSMF2893SLX01 Cathode Anode Collector Emitter Anode Cathode + 0.3 - 0.1 VEMD2023SLX01 VEMT2023SLX01 VEMT2523SLX01 12 VEMD2523SLX01 VSMY2853SL VSMY2943SL 5.5 ± 0.05 VSMB2948SL 8 ± 0.1 II 2.85 ± 0.1 VSMY294310SL Drawing-No.: 9.800-5123.01-4 Issue: 4; 02.10.15 Rev. 1.0, 22-Nov-17 Document Number: 84890 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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