VSMY5940

VSMY5940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES • Package type: surface-mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.8 • Peak wavelength: λp = 940 nm • High speed • Angle of half intensity: ϕ = ± 60° • 0805 standard surface-mountable package • Floor life: 168 h, MSL 3, according to J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION As part of the SurfLightTM portfolio, the VSMY5940 is an infrared, 940 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, in a low profile 0805 surface mount (SMD) package. APPLICATIONS • Miniature light barrier • Optical switch • IR point source PRODUCT SUMMARY COMPONENT Ie (mW/sr) at IF = 100 mA ϕ (°) λp (nm) tr (ns) 13 ± 60 940 7 VSMY5940 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY5940 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity Rev. 1.0, 15-Apr-2019 Document Number: 80139 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY5940 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 500 mA PV 190 mW Power dissipation Junction temperature Tj 125 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C According to Fig. 7, J-STD-020 Tsd 260 °C EIA / JESD51 RthJA 280 K/W Soldering temperature Thermal resistance junction-to-ambient Axis Title Axis Title 200 110 10000 180 RthJA = 280 K/W 90 1000 120 100 80 100 60 40 20 RthJA = 280 K/W 80 1000 70 1st line 2nd line 140 2nd line IF - Forward Current (mA) 160 1st line 2nd line 2nd line PV - Power Dissipation (mW) 10000 100 60 50 40 100 30 20 10 10 0 0 20 40 60 80 100 10 0 0 120 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. Forward voltage PARAMETER IF = 100 mA, tp = 20 ms VF - 1.6 1.9 V Temperature coefficient of VF IF = 100 mA, tp = 20 ms TKVF - -0.7 - mV/K Reverse current IR Not designed for reverse operation UNIT μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 30 - pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 9 13 18 mW/sr Temperature coefficient of radiant power IF = 100 mA, tp = 20 ms TKφe - -0.2 - %/K ϕ - ± 60 - ° Peak wavelength IF = 100 mA, tp = 20 ms λp - 940 - nm Spectral bandwidth IF = 100 mA, tp = 20 ms Δλ - 55 - nm Temperature coefficient of λp IF = 100 mA, tp = 20 ms TKλp - 0.28 - nm/K Rise time IF = 100 mA, 10 % to 90 % tr - 5 - ns Fall time IF = 100 mA, 10 % to 90 % tf - 5 - ns Junction capacitance Angle of half intensity Rev. 1.0, 15-Apr-2019 Document Number: 80139 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY5940 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 10000 100 100 10 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 IF = 100 mA 80 70 1000 60 50 40 100 30 20 10 0 2.6 800 850 900 950 λ - Wavelength (nm) Fig. 3 - Forward Current vs. Forward Voltage Fig. 5 - Relative Radiant Power vs. Wavelength Axis Title Axis0° Title 10° 10000 1st line 2nd line 100 0.1 2nd line Ie, rel. - Relative Radiant Intensity 1000 1 20° 10000 30° tp = 100 μs Ie,rel - Relative Radiant Intensity (Ie / Ie(100 mA)) 10 1050 VF - Forward Voltage (V) 10 1000 40° 1.0 0.9 50° 0.8 100 60° 70° 0.7 80° 10 0.01 1 10 10 100 0.6 0.4 0.2 0 IF - Forward Current (mA) 1st line Fig. 4 - Relative Radiant Intensity vs. Forward Current Fig. 6 - Relative Radiant Intensity vs. Angular Displacement REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 250 245 °C FLOOR LIFE 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (°C) 1000 φ - Angular Displacement 2nd line 10 10000 90 1st line 2nd line 1000 100 1st line 2nd line 2nd line IF - Forward Current (mA) tp = 100 μs 2nd line Ie, rel. - Relative Radiant Intensity (%) 1000 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 DRYING Max. ramp up 3 °C/s 50 10 0 0 50 100 150 200 250 300 Time (s) 19841 Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.0, 15-Apr-2019 Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-033D or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 80139 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY5940 www.vishay.com Vishay Semiconductors 0.7 2 PACKAGE DIMENSIONS in millimeters Optical axis 1.25 0.8 0.1 Technical drawings according to DIN specification. 0.8 0.2 0.6 Not indicated tolerances ± 0.1 Recommended footprint Cathode 0.8 0.7 0.4 1 0.9 Anode 0.9 Drawing- No.: 6.550-5352.01-4 Issue: 1; 20.12.2016 Rev. 1.0, 15-Apr-2019 Document Number: 80139 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY5940 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 4 0.2 ± 0.05 2 ± 0.05 Ø 1.55 ± 0.05 2.24 0.94 8 3.5 ± 0.05 1.75 Anode Cathode 1.45 4 Ø 1.1 +0.1 Reel off direction Not indicated tolerances ± 0.1 Technical drawings according to DIN specification. Drawing-No.: 9.700-5352.02-4 Issue: 1; 20.12.2016 REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z 14.4 max. Form of the leave open of the wheel is supplier specific. Ø20.2 min. 1.5 min. +0.5 Ø13 -0.2 Z 2:1 Technical drawings according to DIN specification. Drawing-No.: 9.800-5096.01-4 Issue: 5; 20.12.2016 Rev. 1.0, 15-Apr-2019 Document Number: 80139 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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