VSMY7852X01
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
• Package type: surface-mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: λp = 850 nm
20783
• High reliability
• High radiant power
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY7852X01 is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance Little Star package. A 20 mil chip
provides outstanding low forward voltage and allows DC
operation of the device up to 250 mA.
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
to 1.5 A pulses
• Low thermal resistance: RthJP = 15 K/W
• Floor life: 1 year, MSL 2, according to J-STD-020
APPLICATIONS
• Lead (Pb)-free reflow soldering
• Infrared illumination for CMOS cameras (CCTV)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Machine vision IR data transmission
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSMY7852X01
55
± 60
850
8
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY7852X01-GS08
Tape and reel
MOQ: 2000 pcs, 2000 pcs/reel
Little Star
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
250
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
500
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
Power dissipation
PV
500
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +100
°C
According to Fig. 7, J-STD-20
Tsd
260
°C
According to J-STD-051, soldered on PCB
RthJP
15
K/W
Soldering temperature
Thermal resistance junction-to-pin
Rev. 1.7, 06-Apr-17
Document Number: 81146
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors
600
300
500
250
IF - Forward Current (mA)
PV - Power Dissipation (mW)
www.vishay.com
400
300
200
RthJP = 15 K/W
100
200
150
100
RthJP = 15 K/W
50
0
0
0
21779
20
40
60
80
100
120
0
Tamb - Ambient Temperature (°C)
20
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
40
60
80
100
120
Tamb - Ambient Temperature (°C)
21780
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 250 mA, tp = 10 ms
VF
-
1.7
2.0
V
Temperature coefficient of VF
IF = 1 mA
TKVF
-
-1.5
-
mV/K
Reverse current
VR = 5 V
IR
Radiant intensity
IF = 250 mA, tp = 10 ms
Ie
30
Radiant power
IF = 250 mA, tp = 20 ms
φe
-
130
-
mW
IF = 1 A
TKφe
-
-0.5
-
%/K
ϕ
-
± 60
-
deg
Peak wavelength
IF = 250 mA
λp
-
850
-
nm
Spectral bandwidth
IF = 250 mA
Δλ
-
30
-
nm
Forward voltage
Temperature coefficient of φe
Angle of half intensity
Not designed for reverse operation
55
90
μA
mW/sr
Temperature coefficient of λp
IF = 250 mA
TKλp
-
0.2
-
nm/K
Rise time
IF = 250 mA
tr
-
8
-
ns
Fall time
IF = 250 mA
tf
-
10
-
ns
Rev. 1.7, 06-Apr-17
Document Number: 81146
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Φe, rel - Relative Radiant Power
1
1
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
0.5
0.25
0
650
3
VF - Forward Voltage (V)
21781
0.75
750
Fig. 3 - Forward Current vs. Forward Voltage
0°
10°
20°
30°
tp = 100 µs
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
950
Fig. 5 - Relative Radiant Power vs. Wavelength
1000
100
10
1
0.1
0.001
0.01
0.1
1
40°
1.0
0.9
50°
0.8
60°
Fig. 4 - Radiant Intensity vs. Forward Current
70°
0.7
10
IF - Forward Current (A)
Rev. 1.7, 06-Apr-17
850
λ- Wavelength (nm)
21776
ϕ - Angular Displacement
IF - Forward Current (A)
tp = 100 µs
80°
0.6
0.4
0.2
0
948013-1
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81146
3
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
Vishay Semiconductors
TAPING DIMENSIONS in millimeters
20846
Rev. 1.7, 06-Apr-17
Document Number: 81146
4
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6
0.7
0.5
5.2
0.7
3
Ø 3.3
1.6
0.6
2.6
7
6
2.6
0.1
0.3
Anode marking
Recommended solder pad
Recommended area for heat sink
connected with anode pad
technical drawings
according to DIN
specifications
8.2
6.2
Not indicated tolerances ± 0.1
8.65
3
17.5
1.2
2
solder pad cathode
solder pad
anode
contour of
device
Drawing-No.: 6.541-5076.01-4
Issue: 3; 22.10.14
Rev. 1.7, 06-Apr-17
19
Document Number: 81146
5
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
max. 100 s
Floor life: 1 year
100
max. ramp down 6 °C/s
50
0
19841
50
100
150
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for Preconditioning According to JEDEC®, Level 2
Rev. 1.7, 06-Apr-17
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2, according to J-STD-020B
max. ramp up 3 °C/s
0
FLOOR LIFE
max. 30 s
150
max. 120 s
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 81146
6
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
1
Document Number: 91000
