VSMY98525DS

VSMY98525DS www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • DESCRIPTION As part of the SurfLightTM portfolio, the VSMY98525DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode. • • • • Package type: surface-mount Double stack technology Package form: power QFN Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00 Peak wavelength: λp = 850 nm Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: ϕ = ± 25° Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses Low thermal resistance: RthJP = 9 K/W Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Illumination for cameras (3D gaming) • Machine vision PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY98525DS 1000 ± 25 850 14 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY98525DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 1 A A Peak forward current tp/T = 0.5, tp = 100 μs IFM 2 Surge forward current tp = 100 μs IFSM 5 A PV 3.5 W Power dissipation Tj 115 °C Operating temperature range Junction temperature Tamb -40 to +85 °C Storage temperature range Tstg -55 to +100 °C According to Fig. 7, J-STD-20 Tsd 260 °C JESD 51 RthJP 9 K/W Soldering temperature Thermal resistance junction-to-pin Rev. 1.1, 27-Jan-2022 Document Number: 84908 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98525DS www.vishay.com Vishay Semiconductors 4.0 1.0 IF - Forward Current (A) PV - Power Dissipation (W) 3.5 3.0 2.5 2.0 RthJA = 9 K/W 1.5 1.0 0.8 0.6 RthJA = 9 K/W 0.4 0.2 0.5 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. Forward voltage IF = 1 A, tp = 20 ms VF - 3.1 3.5 V - -3 - mV/K μA Temperature coefficient of VF IF = 1 A Reverse current Junction capacitance UNIT VR = 5 V IR - - 10 VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ - 130 - pF IF = 1 A, tp = 20 ms Ie 800 1000 1600 mW/sr Radiant intensity Radiant power IF = 1 A, tp = 20 ms φe - 1300 - mW Temperature coefficient of φ IF = 1 A, tp = 20 ms TKφ - -0.3 - %/K ϕ - ± 25 - deg Peak wavelength IF = 1 A λp 830 850 870 nm Spectral bandwidth IF = 1 A Δλ - 35 - nm Angle of half intensity Temperature coefficient of λp IF = 1 A, tp = 20 ms TKλp - 0.3 - nm/K Rise time IF = 1 A tr - 14 - ns Fall time IF = 1 A tf - 17 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie,rel - Relative Radiant Intensity (%) IF - Forward Current (mA) 10 000 tp = 100 μs 1000 100 10 2.0 3.0 4.0 5.0 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.1, 27-Jan-2022 1000 tp = 100 μs 100 10 1 10 100 1000 IF - Forward Current (mA) Fig. 4 - Relative Radiant Intensity vs. Forward Current Document Number: 84908 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98525DS www.vishay.com Vishay Semiconductors 10° 20° IF = 1.0 A 90 80 70 60 50 40 30 20 10 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity Ie, rel - Relative Radiant Intensity (%) 0° 100 0 700 750 800 850 900 0.6 950 0.4 0.2 0 λ - Wavelength (nm) Fig. 5 - Relative Radiant Intensity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement TAPING DIMENSIONS in millimeters Ø 60.0 ± 1.0 (2.36 ± 0.039) Ø 178 ± 2.0 (7.0 ± 0.08) Ø 13.0 (0.512) typ. 14.40 (0.57) typ. Notes • Empty component pockets sealed with top cover tape • 7 inch reel - 600 pieces per reel • The maximum number of consecutive missing lamps is two • In accordance with ANSI/EIA 481-1-A-1994 specifications 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.1 Cathode Ø 1.50 + 0.10 1.75 ± 0.10 5.50 ± 0.05 12.00 ± 0.30 Ø 1.50 + 0.25 Rev. 1.1, 27-Jan-2022 Document Number: 84908 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98525DS www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 1.90 2.70 3.85 ± 0.1 Cathode Anode 1.00 3.85 ± 0.1 R0 3.00 0.30 ± 0.05 0.40 ± 0.05 2.80 .2 0 Notes • Tolerance is ± 0.10 mm (0.004") unless otherwise noted • Specifications are subject to change without notice 1.0 2.8 0.5 2.8 Rev. 1.1, 27-Jan-2022 Document Number: 84908 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98525DS www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 10 s max. Temperature 217 °C 200 °C 255 °C to 260 °C 3 °C/s max. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 6 °C/s max. 150 °C 60 s to 120 s Moisture sensitivity level 3, according to J-STD-020B 60 s max. Time Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.1, 27-Jan-2022 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % 3 °C/s max. 22932 FLOOR LIFE DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84908 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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