VSMY98545

VSMY98545 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: high power SMD with lens • Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 • • • • • • • DESCRIPTION As part of the SurfLightTM portfolio, the VSMY98545 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1.5 A. • • • • Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 45° Low forward voltage Designed for high drive currents: up to 1.5 A (DC) and up to 5 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • Infrared illumination for CMOS cameras (CCTV) Illumination for cameras (3D gaming) Machine vision Bio identification PRODUCT SUMMARY COMPONENT VSMY98545 Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 380 ± 45 850 15 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY98545 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 1.5 A A Peak forward current tp/T = 0.5, tp = 100 μs IFM 2 Surge forward current tp = 100 μs IFSM 5 A PV 3.5 W Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / pin Rev. 1.4, 27-Jan-2022 Tj 115 °C Tamb -40 to +85 °C Tstg -55 to +100 °C According to Fig. 10, J-STD-20 Tsd 260 °C JESD 51 RthJP 10 K/W Document Number: 81223 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98545 www.vishay.com Vishay Semiconductors 1.8 RthJA = 10 K/W 3.5 IF - Forward Current (A) PV - Power Dissipation (W) 4.0 RthJA = 10 K/W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 1.5 1.2 0.9 0.6 0.3 0 100 0 20 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 1 A, tp = 20 ms VF - 1.8 2.5 V IF = 5 A, tp = 100 μs VF - 2.6 - V IF = 100 mA TKVF - -1.5 - mV/K VR = 5 V IR Not designed for reverse operation μA IF = 1 A, tp = 20 ms Ie 250 380 - mW/sr IF = 5 A, tp = 100 μs Ie - 1600 - mW/sr IF = 1 A, tp = 20 ms φe - 800 - mW IF = 100 mA TKφe - -0.13 - %/K ϕ - ± 45 - deg Angle of half intensity Peak wavelength IF = 1 A λp - 850 - nm Spectral bandwidth IF = 1 A Δλ - 35 - nm IF = 100 mA TKλp - 0.2 - nm/K Rise time IF = 1 A tr - 15 - ns Fall time IF = 1 A tf - 18 - ns Temperature coefficient of λp Rev. 1.4, 27-Jan-2022 Document Number: 81223 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98545 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 tp = 100 μs 1 tp = 100 μs 1000 100 0.1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.1 2.8 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage IF = 100 mA tp = 20 ms 1.50 1.40 1.30 1.20 -50 -25 0 25 50 75 120 IF = 100 mA tp = 20 ms 115 110 105 100 95 90 85 80 100 -60 -40 -20 Tamb - Ambient Temperature (°C) IF = 100 mA tp = 20 ms 110 105 100 95 90 85 80 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.4, 27-Jan-2022 20 40 60 80 100 Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Ie, rel - Relative Radiant Intensity (%) VF, rel - Relative Forward Voltage (%) 120 -60 -40 -20 0 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature 115 10 Fig. 6 - Radiant Intensity vs. Forward Current Ie, rel - Relative Radiant Intensity (%) VF - Forward Voltage (V) 1.70 1.60 1.0 IF - Forward Current (A) 100 IF = 1 A 90 80 70 60 50 40 30 20 10 0 700 750 800 850 900 950 1000 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 81223 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98545 www.vishay.com 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.4 0.6 0.2 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity 0° Vishay Semiconductors 0 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement TAPING DIMENSIONS in millimeters Ø 60.0 ± 1.0 (2.36 ± 0.039) Ø 178 ± 2.0 (7.0 ± 0.08) Ø 13.0 (0.512) typ. 14.40 (0.57) typ. Notes • Empty component pockets sealed with top cover tape. • 7 inch reel - 600 pieces per reel. • The maximum number of consecutive missing lamps is two. • In accordance with ANSI / EIA 481-1-A-1994 specifications. 8.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 Cathode Ø 1.50 + 0.10 1.75 ± 0.10 12.00 +- 0.30 0.10 5.50 ± 0.05 Ø 1.50 + 0.25 Rev. 1.4, 27-Jan-2022 Document Number: 81223 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98545 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 1.90 Cathode 3.85 ± 0.1 .76 2.70 Ø2 Anode 1.00 3.85 ± 0.1 2.80 38 . R0 . 2.24 ± 0.1 0.15 ± 0.05 0.40 ± 0.05 R1 15 Notes • Tolerance is ± 0.10 mm (0.004") unless otherwise noted. • Specifications are subject to change without notice. 1.0 2.8 0.5 2.8 Rev. 1.4, 27-Jan-2022 Document Number: 81223 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY98545 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 10 s max. Temperature 217 °C 200 °C 255 °C to 260 °C 3 °C/s max. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 6 °C/s max. 150 °C 60 s to 120 s Moisture sensitivity level 3, according to J-STD-020B 60 s max. Time Fig. 10 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.4, 27-Jan-2022 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % 3 °C/s max. 22932 FLOOR LIFE DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 81223 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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