VSS8D2M12
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
eSMP® Series
• Low-profile package
Available
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Compatible to SOD-128 package case outline
Top View
Bottom View
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SlimSMAW (DO-221AD)
Cathode
Anode
DESIGN SUPPORT TOOLS
click logo to get started
Models
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Available
PRIMARY CHARACTERISTICS
IF(AV)
2A
VRRM
120 V
IFSM
50 A
VF at IF = 2 A (TA = 125 °C)
0.59 V
TJ max.
175 °C
Package
SlimSMAW (DO-221AD)
Circuit configuration
Single
Case: SlimSMAW (DO-221AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
VSS8D2M12
VRRM
120
IF(AV) (1)
2
IF(AV) (2)
1.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
Operating junction temperature range
TJ (3)
-40 to +175
Storage temperature range
TSTG
-55 to +175
Maximum average forward rectified current (fig.1)
UNIT
2M12
V
A
A
°C
Notes
(1) Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2) Free air, mounted on recommended copper pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
Revision: 21-Jan-2019
Document Number: 87443
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSS8D2M12
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1 A
IF = 2 A
Instantaneous forward voltage
IF = 1 A
IF = 2 A
VR = 90 V
Reverse current
VR = 120 V
Typical junction capacitance
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
4.0 V, 1 MHz
IR (2)
TYP.
MAX.
0.60
-
0.73
0.81
0.51
-
0.59
0.67
0.01
-
0.5
-
-
0.25
1
3
220
-
IR (2)
CJ
UNIT
V
mA
mA
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance
SYMBOL
TYP.
MAX.
RJA (1)(2)
120
150
RJM (3)
12
15
UNIT
°C/W
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint
(3) Thermal resistance junction-to-mount to follow JEDEC 51-14 transient dual interface test method (TDIM)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
VSS8D2M12-M3/H
0.033
VSS8D2M12-M3/I
VSS8D2M12HM3/H (1)
VSS8D2M12HM3/I (1)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
H
3500
7" diameter plastic tape and reel
0.033
I
14 000
13" diameter plastic tape and reel
0.033
H
3500
7" diameter plastic tape and reel
0.033
I
14 000
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
(1)
Revision: 21-Jan-2019
Document Number: 87443
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSS8D2M12
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
10000
RthJA = 120 °C/W
100
1
TM measured at cathode
terminal mount typical values
10
0
0
25
50
75
100
125
150
TJ = 175 °C
10
1
1000
1st line
2nd line
1000
2nd line
Instantaneous Reverse Current (mA)
RthJM = 12.0 °C/W
2
10000
100
1st line
2nd line
2nd line
Average Forward Rectified Current (A)
3
0.1
TJ = 100 °C
0.01
TJ = 125 °C
TJ = 150 °C
100
0.001
TJ = 25 °C
0.0001
TJ = -40 °C
0.00001
175
20
40
60
10
80
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
Axis Title
Axis Title
2.0
1000
10000
10000
1000
D = 0.5
D = 1.0
D = 0.3
1.0
D = 0.2
100
D = 0.1
0.5
T
D = tp/T
10
0.5
1
1.5
2
100
100
tp
0
0
1000
1st line
2nd line
D = 0.8
2nd line
Junction Capacitance (pF)
1.5
1st line
2nd line
2nd line
Average Power Loss (W)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
2.5
10
3
0.1
1
10
10
1000
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
1st line
2nd line
1000
TJ = 125 °C
1
TJ = 100 °C
100
TJ = 25 °C
TJ = -40 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2nd line
Transient Thermal Impedance (°C/W)
TJ = 175 °C
TJ = 150 °C
10000
1000
10000
Junction to ambient
100
1000
10
100
1st line
2nd line
10
2nd line
Instantaneous Forward Current (A)
100
1
0.01
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 21-Jan-2019
Document Number: 87443
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSS8D2M12
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SlimSMAW (DO-221AD)
Cathode band
0.106 (2.70)
0.075 (1.90)
0.063 (1.60)
0.091 (2.30)
0.032 (0.81)
0.014 (0.36)
0.158 (4.00)
0.142 (3.60)
0.024 (0.60)
0.012 (0.30)
0.197 (5.00)
0.173 (4.40)
0.043 (1.10)
0.035 (0.90)
0.083 (2.10) min.
0.009 (0.22)
0.004 (0.10)
0.055 (1.40) min.
0.118 (3.00) max.
0.055 (1.40) min.
0.228 (5.80) ref.
Mounting pad layout
Revision: 21-Jan-2019
Document Number: 87443
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
1
Document Number: 91000
