VSS8D3M10-M3/H

VSS8D3M10 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series • Low-profile package Available • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Compatible to SOD-128 package case outline Top View Bottom View SlimSMAW (DO-221AD) Cathode Anode DESIGN SUPPORT TOOLS click logo to get started • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. MECHANICAL DATA Models Available PRIMARY CHARACTERISTICS IF(AV) 3A VRRM 100 V Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating  Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified IFSM 60 A VF at IF = 3 A (125 °C) 0.58 V Terminals: matte tin plated J-STD-002 and JESD 22-B102 H3 and HM3 suffix meets JESD 201 class 2 whisker test TJ max. 175 °C Package SlimSMAW (DO-221AD) Circuit configuration Single leads, solderable per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSS8D3M10 Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.1) UNIT 3M10 VRRM 100 IF (1) 3 IF (2) 2.1 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 60 Operating junction temperature range TJ (3) -40 to +175 Storage temperature range TSTG -55 to +175 V A A °C Notes (1) Mounted on 30 mm x 30 mm AL PCB pad area (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA Revision: 29-Oct-2018 Document Number: 87413 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D3M10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A IF = 3 A Instantaneous forward voltage IF = 1.5 A IF = 3 A VR = 70 V Reverse current VR = 100 V Typical junction capacitance SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.55 - 0.67 0.75 0.48 - 0.58 0.66 TA = 25 °C 0.01 - TA = 125 °C 0.7 - - 0.2 1.5 4 340 - TA = 25 °C IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL TYP. MAX. RJA (1)(2) 120 150 RJM (3) 12 15 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint (3) Thermal resistance junction-to-mount to follow JEDEC 51-14 transient dual interface test method (TDIM) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) VSS8D3M10-M3/H 0.033 VSS8D3M10-M3/I VSS8D3M10HM3/H (1) VSS8D3M10HM3/I (1) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE H 3500 7" diameter plastic tape and reel 0.033 I 14 000 13" diameter plastic tape and reel 0.033 H 3500 7" diameter plastic tape and reel 0.033 I 14 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 29-Oct-2018 Document Number: 87413 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D3M10 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 1000 2 100 1 50 75 1 1000 0.1 TJ = 100 °C 0.01 0.001 100 125 150 TJ = 25 °C TJ = -40 °C 10 20 40 60 80 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title Axis Title 10000 1000 10000 D = 0.3 1000 D = 1.0 1.5 D = 0.2 D = 0.8 1.0 D = 0.1 100 D = 0.5 T 0.5 D = tp/T 10 0.5 1 1.5 2 2.5 100 100 tp 0 0 1000 1st line 2nd line 2.0 2nd line Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1st line 2nd line 2nd line Average Power Loss (W) 100 0.0001 175 2.5 3 3.5 10 10 0.1 4 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title TJ = 150 °C 1st line 2nd line 1000 TJ = 125 °C TJ = 100 °C 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C 1 10000 1000 10000 Junction-to-ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C 0.000001 10 0 25 10 0.00001 TM measured at cathode terminal mount typical values 0 TJ = 175 °C 1st line 2nd line 3 Instantaneous Reverse Current (mA) 2nd line RthJM = 12.0 °C/W RthJA = 120 °C/W 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 4 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 29-Oct-2018 Document Number: 87413 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D3M10 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.075 (1.90) 0.063 (1.60) 0.091 (2.30) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.083 (2.10) min. 0.009 (0.22) 0.004 (0.10) 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 29-Oct-2018 Document Number: 87413 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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