VSS8D5M12HM3/H

VSS8D5M12 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES eSMP® Series • Low-profile package Available • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Compatible to SOD-128 package case outline Top View Bottom View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SlimSMAW (DO-221AD) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. MECHANICAL DATA 3D Models PRIMARY CHARACTERISTICS IF(AV) 5A VRRM 120 V IFSM 100 A VF at IF = 5 A (TA = 125 °C) 0.64 V TJ max. 175 °C Package SlimSMAW (DO-221AD) Circuit configuration Single Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per M3 and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load VSS8D5M12 UNIT 5M12 VRRM 120 IF(AV) (1) 5 IF(AV) (2) 2.2 IFSM 100 Operating junction temperature range TJ (3) -40 to +175 Storage temperature range TSTG -55 to +175 V A A °C Notes (1) Mounted on 30 mm x 30 mm aluminum PCB pad areas (2) Free air, mounted on recommended copper pad area (3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 08-Oct-2021 Document Number: 87447 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D5M12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.5 A IF = 5 A Instantaneous forward voltage IF = 2.5 A IF = 5 A VR = 90 V Reverse current VR = 120 V Typical junction capacitance SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.62 - 0.81 0.89 0.53 - 0.64 0.74 TA = 25 °C 0.01 - TA = 125 °C 0.9 - - 0.35 1.6 6 460 - TA = 25 °C IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL TYP. MAX. RθJA (1)(2) 120 150 RθJM (3) 10 12 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Thermal resistance junction-to-ambient to follow JEDEC® 51-2A, device mounted on FR4 PCB, 2 oz., standard footprint (3) Thermal resistance junction-to-mount to follow JEDEC 51-14 transient dual interface test method (TDIM) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) VSS8D5M12-M3/H 0.033 VSS8D5M12-M3/I VSS8D5M12HM3/H (1) VSS8D5M12HM3/I (1) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE H 3500 7" diameter plastic tape and reel 0.033 I 14 000 13" diameter plastic tape and reel 0.033 H 3500 7" diameter plastic tape and reel 0.033 I 14 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 08-Oct-2021 Document Number: 87447 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D5M12 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10000 1000 3 RthJA = 120 °C/W 100 2 1 TM measured at cathode terminal mount typical values 10 0 0 25 50 75 100 125 150 TJ = 175 °C 10 1 1000 0.1 0.01 0.0001 TJ = -40 °C 10 0.00001 20 40 60 80 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Axis Title Axis Title 10000 1000 D = 0.3 D = 1.0 D = 0.2 2.0 D = 0.1 100 T 1.0 D = tp/T 1000 1st line 2nd line D = 0.8 D = 0.5 3.0 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 2nd line Junction Capacitance (pF) 4.0 1000 1st line 2nd line 2nd line Average Power Loss (W) 100 TJ = 25 °C 0.001 175 5.0 100 100 tp 10 0 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 1 10 100 10 1000 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 1000 1st line 2nd line TJ = 125 °C 1 TJ = 100 °C 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 2nd line Transient Thermal Impedance (°C/W) TJ = 175 °C TJ = 150 °C 10000 1000 10000 Junction to ambient 100 1000 10 100 1st line 2nd line 10 2nd line Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C TJ = 100 °C 1st line 2nd line 5 2nd line Instantaneous Reverse Current (mA) RthJM = 10.0 °C/W 4 10000 100 1st line 2nd line 2nd line Average Forward Rectified Current (A) 6 1 0.01 10 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Oct-2021 Document Number: 87447 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSS8D5M12 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.075 (1.90) 0.063 (1.60) 0.091 (2.30) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.083 (2.10) min. 0.009 (0.22) 0.004 (0.10) 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 08-Oct-2021 Document Number: 87447 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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