VSSA310S
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
3D 3D
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
100 V
IFSM
60 A
EAS
24 mJ
VF at IF = 3.0 A
0.62 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configurations
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSA310S
UNIT
V3B
Device marking code
VRRM
100
IF (1)
3.0
IF (2)
1.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
60
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
24
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Maximum repetitive peak reverse voltage
Maximum DC forward current
V
A
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
Revision: 02-Nov-2020
Document Number: 89138
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA310S
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 1.0 mA
Breakdown voltage
IF = 3.0 A
Instantaneous forward voltage
VR = 70 V
Reverse current
VR = 100 V
Typical junction capacitance
SYMBOL
TYP.
MAX.
UNIT
VBR
100 (minimum)
-
V
0.71
0.80
0.62
0.70
TA = 25 °C
TA = 25 °C
TA = 125 °C
VF (1)
V
TA = 25 °C
1.0
-
μA
TA = 125 °C
0.95
-
mA
3.5
150
μA
2.2
15
mA
175
-
pF
TA = 25 °C
IR (2)
TA = 125 °C
CJ
4.0 V, 1 MHz
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VSSA310S
RθJA (1)
135
RθJM (2)
25
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R
θJA - junction to ambient
(2) Units mounted on PCB with 10 mm x 10 mm copper pad areas. R
θJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSA310S-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
VSSA310S-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
Revision: 02-Nov-2020
Document Number: 89138
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA310S
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
10000
10
3.0
2.5
2.0
1.5
1.0
0.5
TM Measured at Terminal
0
0
25
75
50
100
125
1
0.1
1000
TJ = 125 °C
0.01
TJ = 25 °C
0.001
100
0.0001
TJ = -40 °C
10
0.00001
150
10
TM - Mount Temperature (°C)
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 1 - Maximum Forward Current Derating Curve
1000
2.6
D = 0.5
2.4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
Junction Capacitance (pF)
D = 0.3
2.2
Average Power Loss (W)
TJ = 150 °C
TJ = 100 °C
1st line
2nd line
2nd line
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
3.5
D = 0.2
2.0
1.8
1.6
D = 1.0
D = 0.1
1.4
1.2
1.0
T
0.8
0.6
100
0.4
0.2
D = tp/T
tp
10
0
0.4
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
10
1000
TJ = 125 °C
1
TJ = 100 °C
100
TJ = 25 °C
TJ = -40 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
1000
10000
TJ = 150 °C
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 02-Nov-2020
Document Number: 89138
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA310S
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 02-Nov-2020
Document Number: 89138
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000