VSSA310SHM3_A/H

VSSA310S-M3, VSSA310SHM3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS ® • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 100 V IFSM 60 A VF at IF = 3.0 A 0.62 V TJ max. 150 °C Package DO-214AC (SMA) Diode variation Single die For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANCIAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VSSA310S UNIT V3B VRRM 100 V (1) 3.0 IF (2) 1.7 IFSM 60 A TJ, TSTG -40 to +150 °C IF A Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 20-Jan-17 Document Number: 89405 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSA310S-M3, VSSA310SHM3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage IF = 3.0 A TYP. MAX. UNIT VBR 100 (minimum) - V TA = 25 °C VF (1) TA = 125 °C VR = 70 V Reverse current 0.71 0.80 0.62 0.70 V TA = 25 °C 1.0 - μA TA = 125 °C 0.95 - mA 3.5 150 μA 2.2 15 mA 175 - pF IR (2) TA = 25 °C VR = 100 V Typical junction capacitance SYMBOL TA = 25 °C TA = 125 °C 4.0 V, 1 MHz CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSSA310S RJA (1) 135 RJM (2) 25 Typical thermal resistance UNIT °C/W Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R JA - junction to ambient (2) Units mounted on P.C.B. with 10 mm x 10 mm copper pad areas; R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY VSSA310S-M3/61T VSSA310S-M3/5AT DELIVERY MODE 0.064 61T 1800 7" diameter plastic tape and reel 0.064 5AT 7500 13" diameter plastic tape and reel VSSA310SHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel VSSA310SHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 2.6 D = 0.5 2.4 3.0 2.5 2.0 1.5 1.0 D = 0.8 D = 0.3 2.2 Average Power Loss (W) Average Forward Rectified Current (A) 3.5 D = 0.2 2.0 1.8 1.6 D = 1.0 D = 0.1 1.4 1.2 1.0 T 0.8 0.6 0.4 0.5 TM Measured at Terminal 0.2 0 D = tp/T tp 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 20-Jan-17 Document Number: 89405 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSA310S-M3, VSSA310SHM3 www.vishay.com Vishay General Semiconductor 1000 TA = 125 °C 1 TA = 100 °C 100 TA = 25 °C 0.1 10 0 0.2 0.4 0.6 1.0 0.8 1.2 0.1 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 1000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 20 30 40 50 60 70 80 90 100 10 1 0.01 0.0001 10 Junction to Ambient 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 20-Jan-17 Document Number: 89405 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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