VSSB3L6S-M3
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• Not recommended for PCB bottom side wave mounting
Cathode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
3D Models
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
3.0 A
VRRM
60 V
IFSM
80 A
VF at IF = 3.0 A
0.42 V
TJ max.
150 °C
Package
SMB (DO-214AA)
Circuit configuration
Single
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
VSSB3L6S
UNIT
3L6
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
VRRM
60
IF (1)
3.0
IF (2)
2.6
IFSM
80
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
V
A
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Instantaneous forward voltage
IF = 3.0 A
Reverse current
VR = 60 V
Typical junction capacitance
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
SYMBOL
VF (1)
IR (2)
CJ
TYP.
MAX.
0.49
0.59
0.42
0.52
UNIT
V
-
1200
μA
5
25
mA
358
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 09-Mar-2021
Document Number: 89347
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB3L6S-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance
SYMBOL
VSSB3L6S
RθJA (1)
115
RθJM (2)
13
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R
θJA - junction to ambient
(2) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; R
θJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSB3L6S-M3/52T
0.096
52T
750
7" diameter plastic tape and reel
VSSB3L6S-M3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
3.0
2.5
2.0
1.5
1.0
TM Measured at Terminal
0.5
TJ = 150 °C
1000
10
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
10000
100
3.5
TJ = 125 °C
TJ = 100 °C
1
100
TJ = 25 °C
TJ = -40 °C
10
0.1
0
0
25
50
75
100
125
150
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TM - Mount Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
Axis Title
D = 0.2
1.6
D = 1.0
1.4
D = 0.1
1.2
1.0
0.8
T
0.6
0.4
0.2
D = tp/T
tp
10
1
TJ = 100 °C
0.1
TJ = 125 °C
1000
TJ = 150 °C
1st line
2nd line
D = 0.8
2nd line
Instantaneous Reverse Current (mA)
D = 0.5
D = 0.3
1.8
Average Power Loss (W)
10000
100
2.0
0.01
100
0.001
TJ = 25 °C
0.0001
TJ = -40 °C
10
0.00001
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
20
40
60
80
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 09-Mar-2021
Document Number: 89347
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB3L6S-M3
www.vishay.com
Vishay General Semiconductor
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
Junction to Ambient
100
10
1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 (5.59 REF.
0.008 (0.2)
0 (0)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Revision: 09-Mar-2021
Document Number: 89347
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
