VSSB410S-M3/5BT

VSSB410S-M3 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode Anode LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 100 V Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - RoHS-compliant, commercial grade VF at IF = 4.0 A 0.61 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test TJ max. 150 °C Polarity: color band denotes the cathode end Package SMB (DO-214AA) Circuit configuration Single IFSM 80 A EAS 50 mJ per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSSB410S UNIT V4B Device marking code VRRM 100 IF (1) 4.0 IF (2) 1.9 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 50 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG -40 to +150 °C Maximum repetitive peak reverse voltage Maximum DC forward current V A Notes (1) Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B. (2) Free air, mounted on recommended copper pad area Revision: 09-Mar-2021 Document Number: 89933 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSB410S-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER IR = 1.0 mA Breakdown voltage IF = 4.0 A Instantaneous forward voltage VR = 70 V Reverse current VR = 100 V Typical junction capacitance SYMBOL TYP. MAX. UNIT VBR 100 (minimum) - V 0.68 0.77 0.61 0.69 TA = 25 °C 1.5 - μA TA = 125 °C 1.2 - mA 7.0 250 μA 3.6 20 mA 230 - pF TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C VF (1) IR (2) TA = 125 °C CJ 4.0 V, 1 MHz V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VSSB410S RθJA (1) 120 RθJM (2) 15 UNIT °C/W Notes (1) Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance R θJA - junction to ambient (2) Units mounted on P.C.B. with 14 mm x 14 mm copper pad areas. R θJM - junction to mount ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSB410S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel VSSB410S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel PREFERRED P/N Revision: 09-Mar-2021 Document Number: 89933 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSB410S-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 4.0 3.5 3.0 2.5 2.0 1.5 1.0 TM Measured at Terminal 0.5 10 1 1000 TJ = 150 °C TJ = 125 °C TJ = 100 °C 0.1 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 4.5 0.01 TJ = 25 °C 100 0.001 0.0001 TJ = -40 °C 10 0.00001 0 0 25 75 50 100 125 150 10 20 30 40 50 60 70 80 90 100 TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 1000 3.2 D = 0.5 D = 0.8 D = 0.3 2.8 D = 0.2 Junction Capacitance (pF) Average Power Loss (W) 10000 100 5.0 2.4 D = 1.0 2.0 D = 0.1 1.6 T 1.2 0.8 D = tp/T 0.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 tp 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 0 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title 10000 TJ = 150 °C 1000 10 TJ = 100 °C TJ = 125 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1000 Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 100 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 09-Mar-2021 Document Number: 89933 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSSB410S-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 (5.59 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Revision: 09-Mar-2021 Document Number: 89933 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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