New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
VT10200C
2
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
3
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
VFT10200C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
PIN 2
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
TO-262AA
K
K
MECHANICAL DATA
2
1
1
VBT10200C
PIN 1
VIT10200C
K
PIN 2
2
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
3
HEATSINK
PIN 1
PIN 2
PIN 3
K
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
2 x 5.0 A
VRRM
200 V
IFSM
80 A
VF at IF = 5.0 A
0.65 V
TJ max.
150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VRRM
per device
per diode
IF(AV)
VT10200C
VFT10200C VBT10200C
200
10.0
5.0
VIT10200C
UNIT
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
80
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
EAS
30
mJ
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
- 40 to + 150
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Document Number: 89177
Revision: 09-Dec-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
IF = 2.5 A
IF = 5.0 A
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
VR = 180 V
Reverse current per diode
VR = 200 V
SYMBOL
TYP.
MAX.
UNIT
VBR
200 (minimum)
-
V
0.81
-
1.10
1.60
0.58
-
0.65
0.73
TA = 25 °C
TA = 25 °C
VF (1)
V
TA = 125 °C
TA = 25 °C
1.7
-
μA
TA = 125 °C
1.8
-
mA
-
150
μA
2.5
10
mA
VBT10200C
VIT10200C
UNIT
IR (2)
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10200C
per diode
Typical thermal resistance
3.5
7.0
3.5
3.5
2.5
5.5
2.5
2.5
°C/W
RθJC
per device
VFT10200C
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT10200C-E3/4W
1.88
4W
50/tube
Tube
ITO-220AB
VFT10200C-E3/4W
1.72
4W
50/tube
Tube
TO-263AB
VBT10200C-E3/4W
1.37
4W
50/tube
Tube
TO-263AB
VBT10200C-E3/8W
1.37
8W
800/reel
Tape and reel
TO-262AA
VIT10200C-E3/4W
1.44
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
V(B,I)T10200C
10
8
VFT10200C
6
4
Mounted on Specific Heatsink
2
D = 0.3
9
Average Power Disspation (W)
Average Forward Rectified Current (A)
12
D = 0.8
8
7
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
1
0
D = 0.5
D = tp/T
tp
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Device
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89177
Revision: 09-Dec-09
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
1000
TA = 150 °C
TA = 100 °C
10
TA = 125 °C
1
TA = 25 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20
30
40
50
Junction to Case
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
10
60
70
80
90
100
VFT10200C
V(B,I)T10200C
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Document Number: 89177
Revision: 09-Dec-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
New Product
VT10200C, VFT10200C, VBT10200C, VIT10200C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 2
PIN 3
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0 to 0.01 (0 to 0.254)
0.105 (2.67)
0.095 (2.41)
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4
0.205 (5.20)
0.195 (4.95)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
Mounting Pad Layout
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89177
Revision: 09-Dec-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000