VT10200C-E3/4W

VT10200C-E3/4W

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220AB-3

  • 描述:

    DIODE ARRAY SCHOTTKY 200V TO220

  • 数据手册
  • 价格&库存
VT10200C-E3/4W 数据手册
New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 VT10200C 2 • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) 3 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC VFT10200C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-262AA K K MECHANICAL DATA 2 1 1 VBT10200C PIN 1 VIT10200C K PIN 2 2 Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade 3 HEATSINK PIN 1 PIN 2 PIN 3 K Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum IF(AV) 2 x 5.0 A VRRM 200 V IFSM 80 A VF at IF = 5.0 A 0.65 V TJ max. 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) VT10200C VFT10200C VBT10200C 200 10.0 5.0 VIT10200C UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 30 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG - 40 to + 150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89177 Revision: 09-Dec-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA IF = 2.5 A IF = 5.0 A Instantaneous forward voltage per diode IF = 2.5 A IF = 5.0 A VR = 180 V Reverse current per diode VR = 200 V SYMBOL TYP. MAX. UNIT VBR 200 (minimum) - V 0.81 - 1.10 1.60 0.58 - 0.65 0.73 TA = 25 °C TA = 25 °C VF (1) V TA = 125 °C TA = 25 °C 1.7 - μA TA = 125 °C 1.8 - mA - 150 μA 2.5 10 mA VBT10200C VIT10200C UNIT IR (2) TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT10200C per diode Typical thermal resistance 3.5 7.0 3.5 3.5 2.5 5.5 2.5 2.5 °C/W RθJC per device VFT10200C ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT10200C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT10200C-E3/4W 1.72 4W 50/tube Tube TO-263AB VBT10200C-E3/4W 1.37 4W 50/tube Tube TO-263AB VBT10200C-E3/8W 1.37 8W 800/reel Tape and reel TO-262AA VIT10200C-E3/4W 1.44 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load V(B,I)T10200C 10 8 VFT10200C 6 4 Mounted on Specific Heatsink 2 D = 0.3 9 Average Power Disspation (W) Average Forward Rectified Current (A) 12 D = 0.8 8 7 D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 1 0 D = 0.5 D = tp/T tp 0 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 11 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Device www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89177 Revision: 09-Dec-09 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor 1000 TA = 150 °C TA = 100 °C 10 TA = 125 °C 1 TA = 25 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 0.001 TA = 25 °C 0.0001 20 30 40 50 Junction to Case Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 60 70 80 90 100 VFT10200C V(B,I)T10200C 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Device Document Number: 89177 Revision: 09-Dec-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7° REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 0.250 (6.35) MIN. 30° (TYP.) (REF.) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.401 (10.19) 0.381 (9.68) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) PIN 1 PIN 2 PIN 3 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0 to 0.01 (0 to 0.254) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.205 (5.20) 0.195 (4.95) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89177 Revision: 09-Dec-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000
VT10200C-E3/4W 价格&库存

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VT10200C-E3/4W

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    VT10200C-E3/4W
    •  国内价格 香港价格
    • 1+19.406181+2.48924
    • 50+9.3804750+1.20324
    • 100+8.39853100+1.07728
    • 500+6.67579500+0.85631
    • 1000+6.121881000+0.78526
    • 2000+5.655992000+0.72550
    • 5000+5.152095000+0.66086
    • 10000+4.8408510000+0.62094

    库存:506