VT2045BP-M3/4W

VT2045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology TO-220AC • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. 1 MECHANICAL DATA CASE PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM 160 A Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VF at IF = 20 A 0.51 V Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test TOP max. (AC mode) 150 °C Polarity: As marked TJ max. (DC forward current) 200 °C Mounting Torque: 10 in-lbs maximum Package TO-220AC Diode variation Single die per     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT2045BP VRRM 45 V IF(DC) (1) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 160 A Operating junction temperature range (AC mode) TOP -40 to +150 °C 200 °C Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Junction temperature in DC forward current without reverse bias, t  1 h TJ (2) UNIT Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 10-May-16 Document Number: 89448 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2045BP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A TA = 25 °C IF = 20 A Instantaneous forward voltage VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 45 V Reverse current TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.44 - 0.49 - 0.57 0.66 0.33 - UNIT V 0.41 - 0.51 0.63 - 2000 μA 10 30 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VT2045BP UNIT RJC 1.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AC UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.87 4W 50/tube Tube VT2045BP-M3/4W  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) 24 DC Forward Current (A) 20 16 12 8 DC Forward Current at Thermal Equilibrium 4 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0 25 50 75 100 125 150 175 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Revision: 10-May-16 Document Number: 89448 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2045BP Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) www.vishay.com TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 10 1 0.1 100 0.01 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) 0.380 (9.65) 0.161 (4.08) DIA. 0.139 (3.53) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 10-May-16 Document Number: 89448 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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