VT2060C-E3/4W

VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 VT2060C 2 1 1 3 VFT2060C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA 2 1 1 VBT2060C PIN 1 PIN 2 2 3 VIT2060C K HEATSINK • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 60 V IFSM 150 A VF at IF = 10 A 0.52 V Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB, and Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) VT2060C VFT2060C VBT2060C 60 VIT2060C UNIT V 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 120 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 16-Mar-18 Document Number: 89132 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA IF = 5 A Instantaneous forward voltage per diode (1) IF = 10 A IF = 5 A IF = 10 A Reverse current per diode(2) VR = 60 V TA = 25 °C SYMBOL TYP. MAX. UNIT VBR 60 (minimum) - V 0.49 - VF 0.57 0.65 0.40 - 0.52 0.59 - 850 μA 14 40 mA TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode per device VT2060C RJC VFT2060C VBT2060C VIT2060C 3.0 6.0 3.2 3.0 1.8 4.8 1.9 1.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT2060C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT2060C-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT2060C-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT2060CE3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT2060C-E3/4W 1.45 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89132 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 24 V(B,I)T2060C 20 16 VFT2060C 12 8 4 Mounted on Specific Heatsink TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 0 0 25 50 75 100 125 150 20 30 50 40 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 10 10 D = 0.8 D = 0.5 9 Transient Thermal Impedance (°C/W) Average Power Disspation (W) TA = 150 °C 10 D = 0.3 8 D = 0.2 7 6 D = 1.0 D = 0.1 5 4 T 3 2 1 D = tp/T tp 8 10 2 4 6 VFT2060C V(B,I)T2060C 1 0.01 0 0 Junction to Case 12 0.1 1 10 100 Average Forward Current (A) t - Pulse Duration (s) Fig. 2 - Forward Power Dissipation Characteristics Per Diode Fig. 5 - Typical Transient Thermal Impedance Per Diode 10 000 TA = 150 °C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 16-Mar-18 Document Number: 89132 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89132 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0 to 0.01 (0 to 0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Revision: 16-Mar-18 Document Number: 89132 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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