VT3060G-E3/4W

VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 VT3060G 2 1 • Not recommended for PCB bottom side wave mounting 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) VFT3060G PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-262AA TYPICAL APPLICATIONS K K For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 1 VBT3060G PIN 1 MECHANICAL DATA 3 Case: TO-220AB, TO-262AA VIT3060G K PIN 2 2 HEATSINK PIN 1 PIN 2 PIN 3 K ITO-220AB, Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test IF(AV) 2 x 15 A VRRM 60 V Polarity: as marked IFSM 150 A VF at IF = 15 A 0.61 V Mounting Torque: 10 in-lbs max.  150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Common cathode and Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade PRIMARY CHARACTERISTICS TJ max. TO-263AB per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current  (fig. 1) VRRM per device per diode IF(AV) VT3060G VFT3060G VBT3060G 60 30 15 VIT3060G UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy  at TJ = 25 °C, L = 60 mH per diode EAS 120 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 16-Mar-18 Document Number: 89135 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA TA = 25 °C SYMBOL TYP. MAX. UNIT VBR 60 (min.) - V IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode (1) TA = 25 °C IF = 15 A VF IF = 5 A IF = 7.5 A TA = 125 °C IF = 15 A Reverse current per diode (2) VR = 60 V TA = 25 °C  TA = 125 °C IR 0.49 - 0.53 - 0.65 0.73 0.40 - V 0.46 - 0.61 0.69 14 850 40 μA mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode per device RJC VT3060G VFT3060G VBT3060G VIT3060G 3.2 6.2 3.2 3.2 1.9 5.0 1.9 1.9 °C/W ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE Tube TO-220AB VT3060G-E3/4W 1.88 4W 50/tube ITO-220AB VFT3060G-E3/4W 1.76 4W 50/tube Tube TO-263AB VBT3060G-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT3060G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT3060G-E3/4W 1.45 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89135 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 32 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 36 V(B,I)T3060G 28 24 20 VFT3060G 16 12 8 4 Mounted on Specific Heatsink TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 0 0 25 50 75 100 125 150 20 30 50 40 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 14 12 Transient Thermal Impedance (°C/W) 10 D = 0.5 Average Power Disspation (W) TA = 150 °C 10 D = 0.8 D = 0.3 10 D = 0.2 8 D = 1.0 D = 0.1 6 T 4 2 D = tp/T tp 2 4 6 10 8 12 14 16 VFT3060G V(B,I)T3060G 1 0.01 0 0 Junction to Case 18 0.1 1 10 100 Average Forward Current (A) t - Pulse Duration (s) Fig. 2 - Forward Power Dissipation Characteristics Per Diode Fig. 5 - Typical Transient Thermal Impedance Per Diode 10 000 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 16-Mar-18 Document Number: 89135 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89135 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0 to 0.01 (0 to 0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Revision: 16-Mar-18 Document Number: 89135 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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