VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
2
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VFT3080S
VT3080S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
PIN 2
TYPICAL APPLICATIONS
TO-263AB
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
K
MECHANICAL DATA
A
NC
1
VBT3080S
NC
VIT3080S
K
HEATSINK
A
2
PIN 1
PIN 2
PIN 3
K
3
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
80 V
IFSM
200 A
VF at IF = 30 A
0.73 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Circuit configuration
Single
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080S
VFT3080S
VBT3080S
VIT3080S
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
200
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH
EAS
250
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
IRRM
1.0
A
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 16-Mar-18
Document Number: 89169
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
SYMBOL
TYP.
MAX.
UNIT
VBR
80 (minimum)
-
V
IF = 5 A
IF = 15 A
Instantaneous forward voltage
TA = 25 °C
IF = 30 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 15 A
IF = 30 A
TA = 25 °C
VR = 80 V
Reverse current
TA = 125 °C
IR (2)
0.47
-
0.61
-
0.82
0.95
0.39
-
V
0.57
-
0.73
0.82
70
1000
μA
23
45
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VT3080S
VFT3080S
VBT3080S
VIT3080S
UNIT
RJC
1.5
5.0
1.5
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT3080S-E3/4W
1.88
4W
50/tube
Tube
ITO-220AB
VFT3080S-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VBT3080S-E3/4W
1.37
4W
50/tube
Tube
TO-263AB
VBT3080S-E3/8W
1.37
8W
800/reel
Tape and reel
TO-262AA
VIT3080S-E3/4W
1.46
4W
50/tube
Tube
Revision: 16-Mar-18
Document Number: 89169
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Current (A)
Resistive or Inductive Load
Instantaneous Reverse Current (mA)
35
V(B,I)T3080S
30
25
20
VFT3080S
15
10
5
Mounted on Specific Heatsink
0
0
25
75
50
100
125
150
175
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
30
50
40
60
90
Fig. 4 - Typical Reverse Characteristics
Junction Capacitance (pF)
D = 0.2
20
D = 1.0
D = 0.1
15
T
10
5
D = tp/T
10
15
20
25
1000
tp
100
0.1
0
5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.3
25
30
35
1
10
100
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Transient Thermal Impedance (°C/W)
Average Forward Current (A)
10
100
Case Temperature (°C)
10 000
0
80
70
Fig. 1 - Forward Current Derating Curve
D = 0.5
Average Power Loss (W)
TA = 150 °C
Percent of Rated Peak Reverse Voltage (%)
30
Instantaneous Forward Current (A)
100
10
Junction to Case
VFT3080S
V(B,I)T3080S
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Mar-18
Document Number: 89169
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89169
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 16-Mar-18
Document Number: 89169
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000