VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
TMBS ®
TO-220AC
• Trench MOS Schottky technology
ITO-220AC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
1
1
VT760
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA
package)
2
VFT760
PIN 1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
CASE
PIN 2
PIN 2
TYPICAL APPLICATIONS
TO-263AB
TO-262AA
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
K
MECHANICAL DATA
Case:
TO-220AC,
TO-262AA
A
A
NC
K
NC
VBT760
K
A
K
NC
HEATSINK
per
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV)
and
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
HEATSINK
A
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VIT760
NC
ITO-220AC,
Mounting Torque: 10 in-lbs maximum
7.5 A
VRRM
60 V
IFSM
100 A
VF at IF = 7.5 A
0.60 V
TJ max.
150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT760
VFT760
VBT760
VIT760
UNIT
Maximum repetitive peak reverse voltage
VRRM
60
V
Maximum average forward rectified current (fig. 1)
IF(AV)
7.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
EAS
65
mJ^fie
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
Isolation voltage (ITO-220AB only)
from terminal to heat sink t = 1 min
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 16-Mar-18
Document Number: 89130
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 1.0 mA
Instantaneous forward voltage (1)
Reverse current (2)
TA = 25 °C
IF = 5 A
IF = 7.5 A
TA = 25 °C
IF = 5 A
IF = 7.5 A
TA = 125 °C
VR = 60 V
TA = 25 °C
TA = 125 °C
SYMBOL
TYP.
MAX.
UNIT
VBR
60 (minimum)
-
V
VF
0.58
0.67
0.80
0.50
0.60
0.72
6.6
700
25
μAp
mA
IR
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VT760
VFT760
VBT760
VIT760
UNIT
RJC
3.5
6.5
3.5
3.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
VT760-E3/4W
1.87
4W
50/tube
Tube
ITO-220AC
VFT760-E3/4W
1.68
4W
50/tube
Tube
TO-263AB
VBT760-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VBT760-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VIT760-E3/4W
1.45
4W
50/tube
Tube
Revision: 16-Mar-18
Document Number: 89130
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
9
V(B,I)T760
8
7
6
VFT760
5
4
3
2
Mounted on Specific Heatsink
1
25
0
50
75
100
125
TA = 100 °C
0.1
0.01
TA = 25 °C
150
20
30
50
40
60
70
80
90
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
7
100
Transient Thermal Impedance (°C/W)
10
D = 0.8
D = 0.5
Average Power Disspation (W)
TA = 125 °C
1
0.001
0
6
D = 0.3
5
D = 0.2
4
D = 1.0
D = 0.1
3
T
2
1
D = tp/T
tp
0
1
2
3
4
5
6
7
8
Junction to Case
VFT760
V(B,I)T760
1
0.01
0
9
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TA = 150 °C
10
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
1000
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
Revision: 16-Mar-18
Document Number: 89130
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
DIA.
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.635 (16.13)
0.625 (15.87)
1
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
2
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
Revision: 16-Mar-18
Document Number: 89130
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 16-Mar-18
Document Number: 89130
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000