VTVS3V3ASMF-M3-18

VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors 400 W TransZorb® Transient Voltage Suppressor (TVS) Diode in SMF-Package FEATURES eSMP® Series • 400 W peak pulse power capability with a 10/1000 μs waveform • Tolerance of the avalanche breakdown voltage ± 5 % VTVSxxxA... ± 2 % VTVSxxxG... 2 1 Available • Low-profile package 20278 • Wave and reflow solderable • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge SMF (DO-219AB) MARKING (example only) • Excellent clamping capability XX YYY • “Low-Noise” technology - very fast response time • AEC-Q101 qualified available 22623 • Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL Bar = cathode marking YYY = type code (see table below) XX = date code • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Simulation Tools Models PRIMARY CHARACTERISTICS VBR 6.4 V to 78.2 V VWM 3.3 V to 63 V PPPM 400 W TJ max. 175 °C Polarity Unidirectional Package SMF (DO-219AB) ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART NUMBER (EXAMPLE) TOLERANC E VBR VTVS5V0ASMF- ±5% VTVS5V0ASMF- ±5% VTVS5V0ASMF- ±5% AEC-Q101 QUALIFIED RoHS-COMPLIANT + LEAD (Pb)-FREE TERMINATIONS HALOGEN-FREE VTVS5V0ASMF- ±5% VTVS5V0GSMF- ±2% VTVS5V0GSMF- ±2% VTVS5V0GSMF- ±2% VTVS5V0GSMF- ±2% Rev. 2.2, 19-Nov-2021 H H H H PACKAGING CODE 3K PER 7" REEL TIN (8 mm PLATED TAPE), MOQ = 30K M 3 -08 M 3 -08 M 3 10K PER 13" REEL (8 mm TAPE), MOQ = 50K VTVS5V0ASMF-M3-08 VTVS5V0ASMF-HM3-08 -18 M 3 M 3 -08 -08 ORDERING CODE (EXAMPLE) -18 VTVS5V0ASMF-M3-18 VTVS5V0ASMF-HM3-18 VTVS5V0GSMF-M3-08 M 3 M 3 -18 VTVS5V0GSMF-HM3-08 VTVS5V0GSMF-M3-18 M 3 -18 VTVS5V0GSMF-HM3-18 Document Number: 85891 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors PACKAGE DATA PACKAGE NAME MOLDING COMPOUND WEIGH T (mg) HEIGH T MAX. (mm) LENGT H MAX. (mm) WIDT H MAX. (mm) MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL WHISKER TEST ACC. JESD 201 SOLDERING CONDITIONS SMF (DO-219AB) Halogen-free 15 1.08 3.9 1.9 UL 94 V-0 MSL level 1 (acc. J-STD-020) class 2 Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS Peak pulse current VALUE UNIT tp = 10/1000 μs waveform IPPM see “Electrical Characteristics” A tp = 10/1000 μs waveform PPP 400 W Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 ± 30 kV kV Mounted on infinite heat sink RthJL 20 K/W IF = 50 A, tp = 1 ms VF 1.8 V Junction temperature TJ -55 to +175 °C TSTG -55 to +175 °C Peak pulse power ESD immunity SYMBOL Thermal resistance Forward clamping voltage Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYPE CODE PART NUMBER HALOGENFREE REVERSE BREAKDOWN VOLTAGE at TJ = 25 °C, IT = 1 mA VBR (V) VBR (V) MIN. MAX. STAND-OFF VOLTAGE MAXIMUM REVERSE CURRENT at VRWM MAXIMUM PEAK PULSE CURRENT tp = 10/1000 μs MAXIMUM REVERSE CLAMPING VOLTAGE at IPPM TYPICAL CAP. at VR = 0 V, f = 1 MHz PROTECTION PATHS VRWM (V) IR (μA) IPPM (A) VC (V) CD (pF) Nchannel 1 VTVS3V3ASMF 9Z5 6.4 7.0 3.3 0.05 42.95 8.9 2095 VTVS5V0ASMF 905 6.4 7.0 5.00 5 42.95 8.9 2095 1 VTVS8V5ASMF 915 9.5 10.5 8.50 0.1 28.24 13.5 1270 1 VTVS9V4ASMF 925 10.5 11.6 9.40 0.1 25.48 14.9 1130 1 VTVS10ASMF 935 11.4 12.7 10.30 0.05 23.20 16.3 988 1 VTVS11ASMF 945 12.6 13.9 11.20 0.05 21.13 18.0 910 1 VTVS12ASMF 955 14.0 15.4 12.40 0.05 19.01 20.1 807 1 VTVS14ASMF 965 15.4 17.0 13.80 0.05 17.16 22.2 752 1 VTVS15ASMF 975 17.1 18.8 15.10 0.05 15.47 25 684 1 VTVS17ASMF 985 19.0 21.0 16.90 0.05 13.79 28 606 1 VTVS19ASMF 995 20.9 23.2 18.70 0.05 12.44 31 558 1 VTVS21ASMF 9A5 23.0 25.4 20.50 0.05 11.33 34 513 1 VTVS23ASMF 9B5 25.7 28.4 22.60 0.05 10.09 38 480 1 VTVS25ASMF 9C5 28.5 31.5 25.20 0.05 9.07 42 433 1 VTVS28ASMF 9D5 31.4 34.7 27.90 0.05 8.21 47 412 1 VTVS31ASMF 9E5 34.2 37.8 30.60 0.05 7.51 51 380 1 VTVS33ASMF 9F5 37.1 41.0 33.30 0.05 6.91 55 379 1 VTVS36ASMF 9G5 40.9 45.2 36.00 0.05 6.24 61 342 1 VTVS40ASMF 9H5 44.7 49.4 39.60 0.05 5.70 67 309 1 VTVS43ASMF 9J5 48.5 53.6 43.20 0.05 5.23 73 292 1 VTVS47ASMF 9K5 53.2 58.8 46.80 0.05 4.76 80 293 1 VTVS52ASMF 9L5 58.9 65.1 52.20 0.05 4.28 89 242 1 VTVS58ASMF 9M5 64.6 71.4 57.60 0.05 3.89 98 245 1 VTVS63ASMF 9N5 70.8 78.2 63.00 0.05 3.54 108 227 1 Rev. 2.2, 19-Nov-2021 Document Number: 85891 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TYPE CODE PART NUMBER HALOGENFREE REVERSE BREAKDOWN VOLTAGE at TJ = 25 °C, IT = 1 mA VBR (V) VBR (V) MIN. MAX. 6.84 STAND-OFF VOLTAGE MAXIMUM MAXIMUM PEAK REVERSE PULSE CURRENT CURRENT at tp = VRWM 10/1000 μs MAXIMUM REVERSE CLAMPING VOLTAGE at IPPM TYPICAL CAP. at VR = 0 V, f = 1 MHz PROTECTION PATHS VRWM (V) IR (μA) IPPM (A) VC (V) CD (pF) Nchannel 3.3 0.05 43.99 8.9 2095 1 VTVS3V3GSMF 9Z2 6.57 VTVS5V0GSMF 902 6.57 6.84 5.00 5 43.99 8.9 2095 1 VTVS8V5GSMF 912 9.80 10.20 8.50 0.1 29.10 13.5 1270 1 VTVS9V4GSMF 922 10.83 11.28 9.40 0.1 26.23 14.9 1130 1 VTVS10GSMF 932 11.81 12.30 10.30 0.05 23.98 16.3 988 1 VTVS11GSMF 942 12.99 13.52 11.20 0.05 21.75 18.0 910 1 VTVS12GSMF 952 14.41 15.00 12.40 0.05 19.53 20.1 807 1 VTVS14GSMF 962 15.88 16.53 13.80 0.05 17.67 22.2 752 1 VTVS15GSMF 972 17.60 18.31 15.10 0.05 15.89 25 684 1 VTVS17GSMF 982 19.60 20.40 16.90 0.05 14.21 28 606 1 VTVS19GSMF 992 21.61 22.50 18.70 0.05 12.84 31 558 1 VTVS21GSMF 9A2 23.72 24.69 20.50 0.05 11.67 34 513 1 VTVS23GSMF 9B2 26.51 27.60 22.60 0.05 10.40 38 480 1 VTVS25GSMF 9C2 29.40 30.60 25.20 0.05 9.35 42 433 1 VTVS28GSMF 9D2 32.39 33.72 27.90 0.05 8.45 47 412 1 VTVS31GSMF 9E2 35.28 36.72 30.60 0.05 7.74 51 380 1 VTVS33GSMF 9F2 38.27 39.84 33.30 0.05 7.11 55 379 1 VTVS36GSMF 9G2 42.19 43.92 36.00 0.05 6.43 61 342 1 VTVS40GSMF 9H2 46.11 48.00 39.60 0.05 5.87 67 309 1 VTVS43GSMF 9J2 50.03 52.08 43.20 0.05 5.39 73 292 1 VTVS47GSMF 9K2 54.88 57.12 46.80 0.05 4.90 80 293 1 VTVS52GSMF 9L2 60.76 63.24 52.20 0.05 4.41 89 242 1 VTVS58GSMF 9M2 66.64 69.36 57.60 0.05 4.01 98 245 1 VTVS63GSMF 9N2 73.01 75.99 63.00 0.05 3.65 108 227 1 Rev. 2.2, 19-Nov-2021 Document Number: 85891 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title 110 500 400 300 10000 Rise time 10 µs to 100 % 100 90 200 80 1st line 2nd line 60 1000 µs to 50 % 50 30 50 40 30 20 20 40 100 ..25.. ..28.. ..31.. ..33.. ..36.. ..40.. ..43.. ..47.. ..52.. ..58.. ..63.. 100 10 0 0 1000 10 0.01 % 10 3000 2000 t (µs) 2nd line 22881 0.1 % Axis Title 10000 120 100 10 1000 100 2nd line VC (V) ZthJL: Junction to lead (infinite heat sink - leads clamped between big copper blocks) VTVS63ASMF ..58.. ..52.. ..47.. ..43.. ..40.. ..36.. ..33.. .31.. 80 1st line 2nd1st lineline 2nd line 2nd line Zth - Thermal Impedance (K/W) 100 % Axis Title 10000 ZthJA: Junction to ambient (Diode soldered on PCB with minimal foot print) 1 10 % Fig. 4 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 1 - 10/1000 μs Peak Pulse Current Wave Form 100 1% VR (V) in % of the Max. Working Voltage VRWM 2nd line 22863_2 60 40 1000 1st line 2nd line 2nd line IRSM (%) 70 2nd line CD (pF) 1000 .28.. .25.. 100 20 0.1 0.0001 0.001 10 0.01 0.1 1 10 tp - Pulse Width (s) 2nd line 22861 0 100 10 0 2 4 6 10 12 14 IPP (A) 2nd line 22862_01 Fig. 2 - Thermal Impedance vs. Time 8 Fig. 5 - Typical Peak Clamping Voltage vs. Peak Pulse Current Axis Title 3000 10000 45 ..5V0.. ..3V3.. 40 ..8V5.. ..21.. ..19.. ..17.. ..15.. ..14.. ..12.. ..11.. ..10....9V4.. ..8V5.. 30 500 400 300 200 100 0.01 % 2nd line VC (V) 2nd line CD (pF) ..23.. 35 1000 22863_1 VTVS25ASMF ..9V4.. ..10.. ..11.. ..12.. ..14.. ..15.. ..17.. ..19.. ..21.. ..23.. 0.1 % 20 15 10 100 ..5V0.. ..3V3.. 5 0 1% 10 % 100 % VR (V) in % of the Max. Working Voltage VRWM 2nd line 2nd line Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Rev. 2.2, 19-Nov-2021 25 1000 1st line 2nd line 2000 10 0 22862_02 10 20 30 40 50 60 IPP (A) 2nd line Fig. 6 - Typical Peak Clamping Voltage vs. Peak Pulse Current Document Number: 85891 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB) 0.85 [0.033] 0.35 [0.014] 0.1 [0.004] 0 [0.000] 5° 5° 1.2 [0.047] 1.7 [0.067] 1.9 [0.075] 0.8 [0.031] Detail Z enlarged 0.1 [0.004] 0.25 [0.010] 1.8 [0.071] min. 1.08 [0.043] 0.88 [0.035] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] foot print recommendation: Reflow soldering 1.3 [0.051] 1.4 [0.055] 1.3 [0.051] 2.9 [0.114] Created - Date: 15. February 2005 Rev. 6 - Date: 24.Feb.2021 Document no.: S8-V-3915.01-001 (4) 22989 Rev. 2.2, 19-Nov-2021 Document Number: 85891 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VTVS3V3ASMF to VTVS63GSMF www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE - SMF Unreeling direction SMF cathode Top view Document no.: S8-V-3717.02-003 (4) Created - Date: 09. Feb. 2010 22670 Rev. 2.2, 19-Nov-2021 Document Number: 85891 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000