VX60M100PWHM3/P

VX60M100PW www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5.0 A FEATURES • Trench MOS Schottky technology Available • Low forward voltage drop, low power losses • High efficiency operation 1 • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 2 3 TO-247AD 3L • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 PIN 1 PIN 2 PIN 3 CASE • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 350 A VF at IF = 30 A (TJ = 125 °C) 0.65 V TJ max. 175 °C Package TO-247AD 3L Circuit configuration Common cathode For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per Polarity: as marked Mounting torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VX60M100PW UNIT VRRM 100 V per device per diode 60 IF(AV) A 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 350 Operating junction temperature range TJ (1) -40 to +175 Storage temperature range TSTG -40 to +175 A °C Note (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 29-Jul-2020 Document Number: 87008 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VX60M100PW www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A Instantaneous forward voltage per diode TJ = 25 °C IF = 30 A VF (1) IF = 5 A IF = 15 A TJ = 125 °C Reverse current at rated VR per diode VR = 100 V Typical junction capacitance MAX. 0.49 - 0.61 - 0.75 0.83 0.39 - 0.54 - 0.65 0.73 TJ = 25 °C 0.0035 - TJ = 125 °C 4 - - 0.5 7 20 2600 - IF = 30 A VR = 70 V TYP. TJ = 25 °C IR (2) TJ = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per device RθJC (1) VX60M100PW UNIT 0.6 °C/W Note (1) Thermal resistance junction-to-case to follow JEDEC® 51-14 transient dual interface test method (TDIM) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE VX60M100PW-M3/P 5.64 P 25/tube Tube VX60M100PWHM3/P (1) 5.64 P 25/tube Tube Note (1) AEC-Q101 qualified Revision: 29-Jul-2020 Document Number: 87008 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VX60M100PW www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 60 50 1000 40 30 100 20 10 10 0 25 50 75 100 125 150 TJ = 150 °C 10 TJ = 125 °C 1 0.01 TJ = 25 °C 100 0.001 0.0001 TJ = -40 °C 10 0.00001 175 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Maximum Forward Current Derating Curve Axis Title Axis Title Axis Title 10 000 30.0 25.0 10000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10000 D = 0.8 D = 1.0 1000 D = 0.2 15.0 D = 0.1 10.0 100 T 5.0 D = tp/T 10 15 20 25 30 100 35 10 100 10 5 1000 tp 0 0 1000 1st line 2nd line 20.0 2nd line Junction Capacitance (pF) D = 0.5 D = 0.3 1st line 2nd line 2nd line Average Power Loss (W) 1000 TJ = 100 °C 0.1 Case Temperature (°C) 0.1 40 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title Axis Title 10000 1 TJ = 175 °C TJ = 150 °C 1000 1st line 2nd line 10 TJ = 125 °C TJ = 100 °C 1 100 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 10000 2nd line Transient Thermal Impedance (°C/W) 100 2nd line Instantaneous Forward Current (A) 10000 TJ = 175 °C Junction to case 1000 100 0.1 0.01 1st line 2nd line 0 2nd line Instantaneous Reverse Current (mA) TC = 149.8°C, R thJC = 0.6 ƱC/W 1st line 2ndline line 2nd 2nd line Average Forward Rectified Current (A) 100 1st line 2nd line 10000 70 10 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 29-Jul-2020 Document Number: 87008 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VX60M100PW www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in millimeters (inches) TO-247AD 3L A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 29-Jul-2020 Document Number: 87008 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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