1N4750

1N4750

  • 厂商:

    TGS

  • 封装:

  • 描述:

    1N4750 - 1W SILICON PLANAR ZENER DIODES - Tiger Electronic Co.,Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4750 数据手册
C FEATURES TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES . Silicon planar power zener diodes For use in stabilizing and clipping circuits with high power rating. . Standaards Zener voltage toerance is Add suffix"A" for request 10% 5% tolerance Other tolerance available upon MECHANICAL DATA . Case: DO-41 glass case .weight: Approx. 0.35 gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 Symbols Zener current see table "Characteristics" Power dissipation at TA=25 Junction temperature Storage temperature range Value ) Units Ptot TJ TSTG 1 1) mW 175 -65 to +175 1)Valid provided that a distance of 8mm from case are kept at ambient temperature ELECTRCAL CHARACTERISTICS(TA=25 ) Min Typ Max 170 1.2 1) Symbols Thermal resistance junction to ambient Forward voltage at IF=200mA Units /W V RthA VF 1) Valid provided that a distance at 8mm from case are kept at ambient temperature Copyright @ 2000 TIGER ELECTRONICS CO.,LTD Page 1 of 3 CE TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES 1N4728…1N4764 SILICON PLANAR ZENER DIODES Nominal Zener Test Current 3) Maximum Zener Impedance 1) Maximum reverse leakage current Surge current at TA=0.25 Maximum regulator Type Voltage at Current at IZT ZZK at IZK at VR IR IZM 2) IZT VZ V 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4735 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758 1N4759 1N4760 1N4761 1N4762 1N4763 1N4764 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 IZT mA 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 ZZT 10 10 9 9 8 7 5 2 3.5 4.0 4.5 5.0 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 3000 2000 1500 1000 750 700 500 550 600 400 mA IR A 100 50 V 1.0 1.0 1.0 1.0 mA 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 mA 276 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10 9 1.0 1.0 1.0 2.0 10 3.0 4.0 5.0 5.0 6.0 7.0 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 0.25 5 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 Notes:1) The Zener impedance is derived from the 1KHz AC voltage which results when an AC current having an RMS calue equal to 10% of the Zener current(IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2)Valid provided that electrodes at a distance of 10mm from case are kept at ambient temperature 3)Measured under thermal equilibriun and DC test conditions. Copyright @ 2000 TIGER ELECTRONICS CO.,LTD Page 2 of 3 CE TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES RATINGS AND CHARACTERISTIC CURVES 1N4728 THRI 1N4764 Admissible power dissipation versus ambient temperature (Valid provided that leads at a distance of 10mm from case are kept at ambient temperature) Copyright @ 2000 TIGER ELECTRONICS CO.,LTD Page 3 of 3
1N4750
### 物料型号: 1N4728至1N4764

### 器件简介: - 这些是1瓦特硅平面稳压二极管,用于在高功率额定的稳定和限幅电路中。 - 标准稳压电压容差为10%,可通过添加后缀“A”获得5%容差,其他容差可以根据请求提供。

### 引脚分配: - 器件采用DO-41玻璃封装。

### 参数特性: - 最大额定值: - 功率耗散在25°C时为11mW。 - 结温为175°C。 - 存储温度范围为-65至+175°C。

- 电气特性(25°C时): - 热阻(结到环境)最大为170°C/W。 - 正向电压在IF=200mA时最大为1.2V。

### 功能详解: - 这些稳压二极管主要用于电压稳定和信号限幅,具有不同的额定稳压电压,从3.3V到100V不等,适用于多种电压稳定需求。

### 应用信息: - 适用于需要电压稳定或信号限幅的电路。

### 封装信息: - 器件采用DO-41玻璃封装,重量约为0.35克。
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