1SS226

TIGER ELECTRONIC CO.,LTD SOT-23 1SS226 SWITCHING DIODE Plastic-Encapsulate Diodes SOT-23 FEATURES Low forward voltage Fast reverse recovery time Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Peak Forward Surge Current @t=10ms Power Dissipation Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR IFM IO IFSM PD TJ TSTG 300 100 2 150 150 -55~+150 mA mA A mW ℃ ℃ 80 V Limit 85 Unit V ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD t rr Test IR= 100uA VR=80V IF=100mA VR=0V , f=1MHz IF=10mA conditions Min 80 0.5 1.2 3 4 Max Unit V uA V pF ns A,Jun,2011 Typical Characteristics 100 1SS226 Reverse Characteristics Ta=100℃ Forward Characteristics 1000 (mA) 10 (nA) REVERSE CURRENT IR Ta =2 5℃ FORWARD CURRENT 1 Ta =1 00 ℃ IF 100 Ta=25℃ 10 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) 1.2 Capacitance Characteristics Ta=25℃ f=1MHz 200 Power Derating Curve CAPACITANCE BETWEEN TERMINALS CT (pF) (mW) 1.0 150 POWER DISSIPATION 0 5 10 15 20 PD 100 50 0.8 0 0 25 50 75 100 125 150 REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (℃) A,Jun,2011