2N2222A

TIGER ELECTRONIC CO.,LTD TO-92 2N2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR (NPN ) FEATURE Complementary NPN Type available (MPS2222) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 75 40 6 600 625 150 -55-150 Units V V V mA mW ℃ ℃ 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) DC current gain hFE(2) * hFE(3) * * Test conditions MIN 75 40 6 MAX UNIT V V V IC= 10uA , IE=0 IC= 10mA , IB=0 IE= 10uA, IC=0 VCB= 60V, IE=0 VCE= 60V,VEB(Off)=3V VEB= 3 V, IC=0 VCE=10V,IC= 150mA VCE=10V,IC= 0.1mA VCE=10V, IC= 500mA IC= 500mA, IB=50mA IC= 150mA, IB=15mA IC= 500mA, IB= 50mA VCC=30V, VEB(Off)=-0.5V, IC=150mA,IB1=15mA VCC=30V,Ic=150mA,IB1=IB2=15mA VCE=20V, IC=20mA, f=100MHz 10 10 100 100 40 42 0.6 0.3 1.2 10 25 225 60 300 300 nA nA nA Collector-emitter saturation voltage Base-emitter saturation voltage Delay time Rise time Storage time Fall time Transition frequency * VCE(sat)(1) VCE(sat)(2) VBE(sat) td tr tS tf * V V V nS nS nS nS MHz fT pulse test CLASSIFICATION OF hFE(1) Rank Range L 100-200 H 200-300 Typical Characteristics MPS2222A