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2N5401

2N5401

  • 厂商:

    TGS

  • 封装:

  • 描述:

    2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR - Tiger Electronic Co.,Ltd

  • 数据手册
  • 价格&库存
2N5401 数据手册
TIGER ELECTRONIC CO.,LTD 2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type 2N5551. • High Collector-Emitter Breakdown Voltage. VCEO=150V (@IC=1mA) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................. .-55~+150°C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage ................................................................................... .150 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ........................................................................................................ 600 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 160 150 5 >50 80 50 100 Typ. 160 Max. 50 50 0.2 0.5 1 1 400 300 6 Unit V V V nA nA V V V V Test Conditions IC=100uA, IE=0 IC=1.0mA, IB=0 IE=10uA, IC=0 VCB=120V, IE=0 VEB=3V. IC=0 IC=10mA, IB=1.0mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 MHz pF Classification of hFE2 Rank Range A 80-200 N 100-240 C 160-400 TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD Characteristics Curve Current Gain & Collector Current 1000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE=5V 1000 VBE(sat) @ IC=10IB hFE 10 100 VCE(sat) @ IC=10IB 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & IC Cutoff Frequency (MHz) Capacitance (pF) VCE=10V 100 10 Cob 1 0.1 1 10 100 10 1 10 100 Reverse Biased Voltage (V) Collector Current-IC (mA) Safe Operating Area 10000 PT=1ms Collector Current-IC (mA) 1000 PT=1s 100 PT=100ms 10 1 1 10 100 1000 Forward Biased Voltage-V CE (V) TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD TO-92 Dimension A B 12 3 α2 α3 C D 3-Lead TO-92 Plastic Package TGS Package Code : A H I E F G α1 *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° TIGER ELECTRONIC CO.,LTD
2N5401 价格&库存

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