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2SA950

2SA950

  • 厂商:

    TGS

  • 封装:

  • 描述:

    2SA950 - TO-92 Plastic-Encapsulate Transistors (PNP) - Tiger Electronic Co.,Ltd

  • 数据手册
  • 价格&库存
2SA950 数据手册
TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURES 1W Output Applications Complementary to 2SC2120 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -35 -30 -5 -0.8 0.6 150 -55 to +150 Unit V V V A W ℃ ℃ 1.EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Emitter-base voltage VCE(sat) VBE VCE=-1V, IC= -700mA IC= -500mA, IB= -20mA VCE=-1V, IC=-10mA VCB=-10V,IE=0 f=1MHz VCE=-5V,IC=-10mA -0.5 35 -0.7 -0.8 V V Test conditions Min -35 -30 -5 -0.1 -0.1 100 320 Typ Max Unit V V V μA μA IC= -0.1mA , IE=0 IC= -10mA , IB=0 IE= -0.1mA, IC=0 VCB= -35V, IE=0 VEB= -5V, IC=0 VCE=-1V, IC=-100mA Collector Output Capacitance Cob 19 pF Transition frequency fT 120 MHz CLASSIFICATION OF hFE(1) Rank Range O 100-200 Y 160-320 B,Nov,2011 Typical Characterisitics -250 2SA950 hFE —— IC Ta=100℃ Static Characteristic COMMON EMITTER Ta=25℃ 1000 (mA) -200 -1.0mA -0.9mA -0.8mA hFE DC CURRENT GAIN IC COLLECTOR CURRENT -150 -0.7mA -0.6mA Ta=25℃ 100 -100 -0.5mA -0.4mA -0.3mA -50 -0.2mA IB=-0.1mA COMMON EMITTER VCE=-1V -1 -10 -100 -800 -0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VBEsat -2000 —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCEsat —— IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -1000 Ta=25℃ Ta=100℃ -100 Ta=100℃ Ta=25℃ β=25 -1 -10 -100 -800 -100 -1 -10 -100 β=25 -800 -10 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IC -800 —— VBE 1000 fT —— IC IC -100 fT 100 COLLECTOR CURRENT -10 TRANSITION FREQUENCY T =1 00℃ a T =2 5℃ a (MHz) 10 (mA) COMMON EMITTER VCE=-1V -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VCE= -5V Ta=25℃ 1 -2 BASE-EMMITER VOLTAGE VBE (V) COLLECTOR CURRENT -10 IC (mA) -100 Cob/ Cib 100 —— Cib VCB/ VEB 700 PC —— Ta f=1MHz IE=0/IC=0 Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) -20 600 (pF) 500 Cob 10 CAPACITANCE C 400 300 200 100 1 -0.1 0 0 25 50 75 100 125 150 -1 -10 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ ) B,Nov,2011
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